JPH0426222B2 - - Google Patents

Info

Publication number
JPH0426222B2
JPH0426222B2 JP58108720A JP10872083A JPH0426222B2 JP H0426222 B2 JPH0426222 B2 JP H0426222B2 JP 58108720 A JP58108720 A JP 58108720A JP 10872083 A JP10872083 A JP 10872083A JP H0426222 B2 JPH0426222 B2 JP H0426222B2
Authority
JP
Japan
Prior art keywords
region
base
type
conductivity type
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58108720A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60765A (ja
Inventor
Michihiro Inoe
Hideaki Sadamatsu
Akira Matsuzawa
Akihiro Kanda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58108720A priority Critical patent/JPS60765A/ja
Publication of JPS60765A publication Critical patent/JPS60765A/ja
Publication of JPH0426222B2 publication Critical patent/JPH0426222B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58108720A 1983-06-16 1983-06-16 バイポ−ラ集積回路装置 Granted JPS60765A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58108720A JPS60765A (ja) 1983-06-16 1983-06-16 バイポ−ラ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58108720A JPS60765A (ja) 1983-06-16 1983-06-16 バイポ−ラ集積回路装置

Publications (2)

Publication Number Publication Date
JPS60765A JPS60765A (ja) 1985-01-05
JPH0426222B2 true JPH0426222B2 (en, 2012) 1992-05-06

Family

ID=14491850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58108720A Granted JPS60765A (ja) 1983-06-16 1983-06-16 バイポ−ラ集積回路装置

Country Status (1)

Country Link
JP (1) JPS60765A (en, 2012)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53134374A (en) * 1977-04-28 1978-11-22 Sony Corp Semiconductor device

Also Published As

Publication number Publication date
JPS60765A (ja) 1985-01-05

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