JPH0424430B2 - - Google Patents
Info
- Publication number
- JPH0424430B2 JPH0424430B2 JP57186865A JP18686582A JPH0424430B2 JP H0424430 B2 JPH0424430 B2 JP H0424430B2 JP 57186865 A JP57186865 A JP 57186865A JP 18686582 A JP18686582 A JP 18686582A JP H0424430 B2 JPH0424430 B2 JP H0424430B2
- Authority
- JP
- Japan
- Prior art keywords
- derivative
- film
- ammonia
- gas
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Silicon Compounds (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57186865A JPS5978918A (ja) | 1982-10-26 | 1982-10-26 | 広バンドギャップアモルファスシリコン膜の形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57186865A JPS5978918A (ja) | 1982-10-26 | 1982-10-26 | 広バンドギャップアモルファスシリコン膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5978918A JPS5978918A (ja) | 1984-05-08 |
JPH0424430B2 true JPH0424430B2 (enrdf_load_stackoverflow) | 1992-04-27 |
Family
ID=16196014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57186865A Granted JPS5978918A (ja) | 1982-10-26 | 1982-10-26 | 広バンドギャップアモルファスシリコン膜の形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5978918A (enrdf_load_stackoverflow) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101050377B1 (ko) | 2001-02-12 | 2011-07-20 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 박막 증착을 위한 개선된 공정 |
US7026219B2 (en) | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US6815007B1 (en) | 2002-03-04 | 2004-11-09 | Taiwan Semiconductor Manufacturing Company | Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film |
US7294582B2 (en) | 2002-07-19 | 2007-11-13 | Asm International, N.V. | Low temperature silicon compound deposition |
JP5005170B2 (ja) | 2002-07-19 | 2012-08-22 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
US7092287B2 (en) | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
US7629270B2 (en) | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
US7253084B2 (en) | 2004-09-03 | 2007-08-07 | Asm America, Inc. | Deposition from liquid sources |
US7966969B2 (en) | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
US7553516B2 (en) | 2005-12-16 | 2009-06-30 | Asm International N.V. | System and method of reducing particle contamination of semiconductor substrates |
US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
US7851307B2 (en) | 2007-08-17 | 2010-12-14 | Micron Technology, Inc. | Method of forming complex oxide nanodots for a charge trap |
US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5323667A (en) * | 1976-08-17 | 1978-03-04 | Citizen Watch Co Ltd | Packaging structure of electronic watch |
-
1982
- 1982-10-26 JP JP57186865A patent/JPS5978918A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5978918A (ja) | 1984-05-08 |
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