JPS5978918A - 広バンドギャップアモルファスシリコン膜の形成方法 - Google Patents

広バンドギャップアモルファスシリコン膜の形成方法

Info

Publication number
JPS5978918A
JPS5978918A JP57186865A JP18686582A JPS5978918A JP S5978918 A JPS5978918 A JP S5978918A JP 57186865 A JP57186865 A JP 57186865A JP 18686582 A JP18686582 A JP 18686582A JP S5978918 A JPS5978918 A JP S5978918A
Authority
JP
Japan
Prior art keywords
ammonia
deriv
film
formula
silane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57186865A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0424430B2 (enrdf_load_stackoverflow
Inventor
Yorihisa Kitagawa
北川　順久
Zenko Hirose
全孝 廣瀬
Kazuyoshi Isotani
磯谷　計嘉
Yoshinori Ashida
芦田　芳徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP57186865A priority Critical patent/JPS5978918A/ja
Publication of JPS5978918A publication Critical patent/JPS5978918A/ja
Publication of JPH0424430B2 publication Critical patent/JPH0424430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP57186865A 1982-10-26 1982-10-26 広バンドギャップアモルファスシリコン膜の形成方法 Granted JPS5978918A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57186865A JPS5978918A (ja) 1982-10-26 1982-10-26 広バンドギャップアモルファスシリコン膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57186865A JPS5978918A (ja) 1982-10-26 1982-10-26 広バンドギャップアモルファスシリコン膜の形成方法

Publications (2)

Publication Number Publication Date
JPS5978918A true JPS5978918A (ja) 1984-05-08
JPH0424430B2 JPH0424430B2 (enrdf_load_stackoverflow) 1992-04-27

Family

ID=16196014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57186865A Granted JPS5978918A (ja) 1982-10-26 1982-10-26 広バンドギャップアモルファスシリコン膜の形成方法

Country Status (1)

Country Link
JP (1) JPS5978918A (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6716751B2 (en) 2001-02-12 2004-04-06 Asm America, Inc. Dopant precursors and processes
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7294582B2 (en) 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7297641B2 (en) 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7553516B2 (en) 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7629270B2 (en) 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7674726B2 (en) 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7674728B2 (en) 2004-09-03 2010-03-09 Asm America, Inc. Deposition from liquid sources
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7732350B2 (en) 2004-09-22 2010-06-08 Asm International N.V. Chemical vapor deposition of TiN films in a batch reactor
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US7851307B2 (en) 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323667A (en) * 1976-08-17 1978-03-04 Citizen Watch Co Ltd Packaging structure of electronic watch

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323667A (en) * 1976-08-17 1978-03-04 Citizen Watch Co Ltd Packaging structure of electronic watch

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7790556B2 (en) 2001-02-12 2010-09-07 Asm America, Inc. Integration of high k gate dielectric
US7585752B2 (en) 2001-02-12 2009-09-08 Asm America, Inc. Process for deposition of semiconductor films
US6743738B2 (en) 2001-02-12 2004-06-01 Asm America, Inc. Dopant precursors and processes
US7547615B2 (en) 2001-02-12 2009-06-16 Asm America, Inc. Deposition over mixed substrates using trisilane
US6821825B2 (en) 2001-02-12 2004-11-23 Asm America, Inc. Process for deposition of semiconductor films
US6900115B2 (en) 2001-02-12 2005-05-31 Asm America, Inc. Deposition over mixed substrates
US6716713B2 (en) 2001-02-12 2004-04-06 Asm America, Inc. Dopant precursors and ion implantation processes
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6958253B2 (en) 2001-02-12 2005-10-25 Asm America, Inc. Process for deposition of semiconductor films
US6716751B2 (en) 2001-02-12 2004-04-06 Asm America, Inc. Dopant precursors and processes
US6962859B2 (en) 2001-02-12 2005-11-08 Asm America, Inc. Thin films and method of making them
US7186582B2 (en) 2001-02-12 2007-03-06 Asm America, Inc. Process for deposition of semiconductor films
US7273799B2 (en) 2001-02-12 2007-09-25 Asm America, Inc. Deposition over mixed substrates
US7285500B2 (en) 2001-02-12 2007-10-23 Asm America, Inc. Thin films and methods of making them
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7297641B2 (en) 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7294582B2 (en) 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US7629270B2 (en) 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7921805B2 (en) 2004-09-03 2011-04-12 Asm America, Inc. Deposition from liquid sources
US7674728B2 (en) 2004-09-03 2010-03-09 Asm America, Inc. Deposition from liquid sources
US7732350B2 (en) 2004-09-22 2010-06-08 Asm International N.V. Chemical vapor deposition of TiN films in a batch reactor
US7966969B2 (en) 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7674726B2 (en) 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7553516B2 (en) 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7851307B2 (en) 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US8203179B2 (en) 2007-08-17 2012-06-19 Micron Technology, Inc. Device having complex oxide nanodots
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition

Also Published As

Publication number Publication date
JPH0424430B2 (enrdf_load_stackoverflow) 1992-04-27

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