JPH0462073B2 - - Google Patents

Info

Publication number
JPH0462073B2
JPH0462073B2 JP57164990A JP16499082A JPH0462073B2 JP H0462073 B2 JPH0462073 B2 JP H0462073B2 JP 57164990 A JP57164990 A JP 57164990A JP 16499082 A JP16499082 A JP 16499082A JP H0462073 B2 JPH0462073 B2 JP H0462073B2
Authority
JP
Japan
Prior art keywords
film
hydrogen
temperature
decomposition
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57164990A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5955441A (ja
Inventor
Yorihisa Kitagawa
Zenko Hirose
Kazuyoshi Isotani
Nobuhiro Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP57164990A priority Critical patent/JPS5955441A/ja
Publication of JPS5955441A publication Critical patent/JPS5955441A/ja
Publication of JPH0462073B2 publication Critical patent/JPH0462073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP57164990A 1982-09-24 1982-09-24 水素化アモルフアスシリコン膜の形成方法 Granted JPS5955441A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57164990A JPS5955441A (ja) 1982-09-24 1982-09-24 水素化アモルフアスシリコン膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57164990A JPS5955441A (ja) 1982-09-24 1982-09-24 水素化アモルフアスシリコン膜の形成方法

Publications (2)

Publication Number Publication Date
JPS5955441A JPS5955441A (ja) 1984-03-30
JPH0462073B2 true JPH0462073B2 (enrdf_load_stackoverflow) 1992-10-05

Family

ID=15803739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57164990A Granted JPS5955441A (ja) 1982-09-24 1982-09-24 水素化アモルフアスシリコン膜の形成方法

Country Status (1)

Country Link
JP (1) JPS5955441A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015053382A (ja) * 2013-09-06 2015-03-19 株式会社日本触媒 シリコン含有エピタキシャル膜およびその製造方法ならびに半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2592238B2 (ja) * 1986-06-24 1997-03-19 セイコー電子工業株式会社 薄膜トランジスタの製造方法
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015053382A (ja) * 2013-09-06 2015-03-19 株式会社日本触媒 シリコン含有エピタキシャル膜およびその製造方法ならびに半導体装置

Also Published As

Publication number Publication date
JPS5955441A (ja) 1984-03-30

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