JPH0556852B2 - - Google Patents

Info

Publication number
JPH0556852B2
JPH0556852B2 JP61147380A JP14738086A JPH0556852B2 JP H0556852 B2 JPH0556852 B2 JP H0556852B2 JP 61147380 A JP61147380 A JP 61147380A JP 14738086 A JP14738086 A JP 14738086A JP H0556852 B2 JPH0556852 B2 JP H0556852B2
Authority
JP
Japan
Prior art keywords
chamber
substrate
substrate temperature
trisilane
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61147380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS633414A (ja
Inventor
Yutaka Hayashi
Mitsuyuki Yamanaka
Mitsuo Umemura
Satoshi Okazaki
Ryoji Takada
Masaaki Kamya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Seiko Epson Corp
Seiko Instruments Inc
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Shin Etsu Chemical Co Ltd
Seiko Epson Corp
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Shin Etsu Chemical Co Ltd, Seiko Epson Corp, Seiko Instruments Inc filed Critical Agency of Industrial Science and Technology
Priority to JP14738086A priority Critical patent/JPS633414A/ja
Publication of JPS633414A publication Critical patent/JPS633414A/ja
Publication of JPH0556852B2 publication Critical patent/JPH0556852B2/ja
Granted legal-status Critical Current

Links

JP14738086A 1986-06-24 1986-06-24 シリコン膜の製造方法 Granted JPS633414A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14738086A JPS633414A (ja) 1986-06-24 1986-06-24 シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14738086A JPS633414A (ja) 1986-06-24 1986-06-24 シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS633414A JPS633414A (ja) 1988-01-08
JPH0556852B2 true JPH0556852B2 (enrdf_load_stackoverflow) 1993-08-20

Family

ID=15428933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14738086A Granted JPS633414A (ja) 1986-06-24 1986-06-24 シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS633414A (enrdf_load_stackoverflow)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2889924B2 (ja) * 1989-06-30 1999-05-10 日本電信電話株式会社 薄膜電界効果トランジスタの製法
JP3121131B2 (ja) * 1991-08-09 2000-12-25 アプライド マテリアルズ インコーポレイテッド 低温高圧のシリコン蒸着方法
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
KR101050377B1 (ko) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
JP5005170B2 (ja) 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US7294582B2 (en) 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US7629270B2 (en) 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US7966969B2 (en) 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7674726B2 (en) 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7553516B2 (en) 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7851307B2 (en) 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US9054206B2 (en) * 2007-08-17 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126680A (ja) * 1983-01-11 1984-07-21 Mitsui Toatsu Chem Inc 非晶質シリコン太陽電池およびその製法

Also Published As

Publication number Publication date
JPS633414A (ja) 1988-01-08

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