JPS633414A - シリコン膜の製造方法 - Google Patents

シリコン膜の製造方法

Info

Publication number
JPS633414A
JPS633414A JP14738086A JP14738086A JPS633414A JP S633414 A JPS633414 A JP S633414A JP 14738086 A JP14738086 A JP 14738086A JP 14738086 A JP14738086 A JP 14738086A JP S633414 A JPS633414 A JP S633414A
Authority
JP
Japan
Prior art keywords
substrate
chamber
silicon film
trisilane
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14738086A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0556852B2 (enrdf_load_stackoverflow
Inventor
Yutaka Hayashi
豊 林
Mitsuyuki Yamanaka
光之 山中
Mitsuo Umemura
梅村　光雄
Satoshi Okazaki
智 岡崎
Ryoji Takada
高田　量司
Masaaki Kamiya
昌明 神谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Seiko Instruments Inc
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Shin Etsu Chemical Co Ltd
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Shin Etsu Chemical Co Ltd, Seiko Instruments Inc filed Critical Agency of Industrial Science and Technology
Priority to JP14738086A priority Critical patent/JPS633414A/ja
Publication of JPS633414A publication Critical patent/JPS633414A/ja
Publication of JPH0556852B2 publication Critical patent/JPH0556852B2/ja
Granted legal-status Critical Current

Links

JP14738086A 1986-06-24 1986-06-24 シリコン膜の製造方法 Granted JPS633414A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14738086A JPS633414A (ja) 1986-06-24 1986-06-24 シリコン膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14738086A JPS633414A (ja) 1986-06-24 1986-06-24 シリコン膜の製造方法

Publications (2)

Publication Number Publication Date
JPS633414A true JPS633414A (ja) 1988-01-08
JPH0556852B2 JPH0556852B2 (enrdf_load_stackoverflow) 1993-08-20

Family

ID=15428933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14738086A Granted JPS633414A (ja) 1986-06-24 1986-06-24 シリコン膜の製造方法

Country Status (1)

Country Link
JP (1) JPS633414A (enrdf_load_stackoverflow)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0335535A (ja) * 1989-06-30 1991-02-15 Nippon Telegr & Teleph Corp <Ntt> 薄膜電界効果トランジスタの製法
US5607724A (en) * 1991-08-09 1997-03-04 Applied Materials, Inc. Low temperature high pressure silicon deposition method
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
US6716751B2 (en) 2001-02-12 2004-04-06 Asm America, Inc. Dopant precursors and processes
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7294582B2 (en) 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7297641B2 (en) 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
JP2009071290A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7553516B2 (en) 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7629270B2 (en) 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7674728B2 (en) 2004-09-03 2010-03-09 Asm America, Inc. Deposition from liquid sources
US7674726B2 (en) 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7732350B2 (en) 2004-09-22 2010-06-08 Asm International N.V. Chemical vapor deposition of TiN films in a batch reactor
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US7851307B2 (en) 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126680A (ja) * 1983-01-11 1984-07-21 Mitsui Toatsu Chem Inc 非晶質シリコン太陽電池およびその製法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126680A (ja) * 1983-01-11 1984-07-21 Mitsui Toatsu Chem Inc 非晶質シリコン太陽電池およびその製法

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0335535A (ja) * 1989-06-30 1991-02-15 Nippon Telegr & Teleph Corp <Ntt> 薄膜電界効果トランジスタの製法
US5607724A (en) * 1991-08-09 1997-03-04 Applied Materials, Inc. Low temperature high pressure silicon deposition method
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
US5700520A (en) * 1991-08-09 1997-12-23 Applied Materials, Inc. Low temperature, high pressure silicon deposition method
US5874129A (en) * 1991-08-09 1999-02-23 Applied Materials, Inc. Low temperature, high pressure silicon deposition method
US5876797A (en) * 1991-08-09 1999-03-02 Applied Materials, Inc. Low temperature high pressure silicon deposition method
US6821825B2 (en) 2001-02-12 2004-11-23 Asm America, Inc. Process for deposition of semiconductor films
US6962859B2 (en) 2001-02-12 2005-11-08 Asm America, Inc. Thin films and method of making them
US6743738B2 (en) 2001-02-12 2004-06-01 Asm America, Inc. Dopant precursors and processes
US6716751B2 (en) 2001-02-12 2004-04-06 Asm America, Inc. Dopant precursors and processes
US7547615B2 (en) 2001-02-12 2009-06-16 Asm America, Inc. Deposition over mixed substrates using trisilane
US6900115B2 (en) 2001-02-12 2005-05-31 Asm America, Inc. Deposition over mixed substrates
US6958253B2 (en) 2001-02-12 2005-10-25 Asm America, Inc. Process for deposition of semiconductor films
US6716713B2 (en) 2001-02-12 2004-04-06 Asm America, Inc. Dopant precursors and ion implantation processes
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US7790556B2 (en) 2001-02-12 2010-09-07 Asm America, Inc. Integration of high k gate dielectric
US7186582B2 (en) 2001-02-12 2007-03-06 Asm America, Inc. Process for deposition of semiconductor films
US7585752B2 (en) 2001-02-12 2009-09-08 Asm America, Inc. Process for deposition of semiconductor films
US7273799B2 (en) 2001-02-12 2007-09-25 Asm America, Inc. Deposition over mixed substrates
US7285500B2 (en) 2001-02-12 2007-10-23 Asm America, Inc. Thin films and methods of making them
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7294582B2 (en) 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7297641B2 (en) 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US7629270B2 (en) 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7674728B2 (en) 2004-09-03 2010-03-09 Asm America, Inc. Deposition from liquid sources
US7732350B2 (en) 2004-09-22 2010-06-08 Asm International N.V. Chemical vapor deposition of TiN films in a batch reactor
US7966969B2 (en) 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7674726B2 (en) 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7553516B2 (en) 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7851307B2 (en) 2007-08-17 2010-12-14 Micron Technology, Inc. Method of forming complex oxide nanodots for a charge trap
US8203179B2 (en) 2007-08-17 2012-06-19 Micron Technology, Inc. Device having complex oxide nanodots
JP2009071290A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US9054206B2 (en) 2007-08-17 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US9443730B2 (en) 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming

Also Published As

Publication number Publication date
JPH0556852B2 (enrdf_load_stackoverflow) 1993-08-20

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