JPH0423401B2 - - Google Patents
Info
- Publication number
- JPH0423401B2 JPH0423401B2 JP62234907A JP23490787A JPH0423401B2 JP H0423401 B2 JPH0423401 B2 JP H0423401B2 JP 62234907 A JP62234907 A JP 62234907A JP 23490787 A JP23490787 A JP 23490787A JP H0423401 B2 JPH0423401 B2 JP H0423401B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- sio
- nonlinear
- amorphous film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62234907A JPS6480002A (en) | 1987-09-21 | 1987-09-21 | Nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62234907A JPS6480002A (en) | 1987-09-21 | 1987-09-21 | Nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6480002A JPS6480002A (en) | 1989-03-24 |
| JPH0423401B2 true JPH0423401B2 (zh) | 1992-04-22 |
Family
ID=16978163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62234907A Granted JPS6480002A (en) | 1987-09-21 | 1987-09-21 | Nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6480002A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2800341B2 (ja) * | 1990-01-19 | 1998-09-21 | 松下電器産業株式会社 | 電圧非直線抵抗体素子の製造方法 |
| JP2560891B2 (ja) * | 1990-07-09 | 1996-12-04 | 株式会社村田製作所 | バリスタの製造方法 |
| US5569495A (en) * | 1995-05-16 | 1996-10-29 | Raychem Corporation | Method of making varistor chip with etching to remove damaged surfaces |
| JP5413600B2 (ja) * | 2010-03-17 | 2014-02-12 | 三菱マテリアル株式会社 | サーミスタ素子およびその製造方法 |
| CN113257503B (zh) * | 2021-05-13 | 2023-01-03 | 中国科学院新疆理化技术研究所 | 一种全无机柔性热敏器件及其制备方法 |
| WO2023140054A1 (ja) * | 2022-01-19 | 2023-07-27 | 三菱マテリアル株式会社 | サーミスタ素子及びその製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5013868A (zh) * | 1973-06-12 | 1975-02-13 | ||
| JPS61181104A (ja) * | 1985-02-06 | 1986-08-13 | シャープ株式会社 | 白金測温抵抗体 |
| JPS6335084A (ja) * | 1986-07-30 | 1988-02-15 | Toshiba Corp | 多方式カラ−テレビジヨン信号処理回路 |
-
1987
- 1987-09-21 JP JP62234907A patent/JPS6480002A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5013868A (zh) * | 1973-06-12 | 1975-02-13 | ||
| JPS61181104A (ja) * | 1985-02-06 | 1986-08-13 | シャープ株式会社 | 白金測温抵抗体 |
| JPS6335084A (ja) * | 1986-07-30 | 1988-02-15 | Toshiba Corp | 多方式カラ−テレビジヨン信号処理回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6480002A (en) | 1989-03-24 |
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