JPH04232219A - ランタンアルミネート薄膜堆積用スパッタリングターゲットの製造方法 - Google Patents
ランタンアルミネート薄膜堆積用スパッタリングターゲットの製造方法Info
- Publication number
- JPH04232219A JPH04232219A JP3171007A JP17100791A JPH04232219A JP H04232219 A JPH04232219 A JP H04232219A JP 3171007 A JP3171007 A JP 3171007A JP 17100791 A JP17100791 A JP 17100791A JP H04232219 A JPH04232219 A JP H04232219A
- Authority
- JP
- Japan
- Prior art keywords
- lanthanum aluminate
- thin film
- sputtering target
- powder
- lanthanum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052746 lanthanum Inorganic materials 0.000 title claims abstract description 38
- -1 lanthanum aluminate Chemical class 0.000 title claims abstract description 38
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000005477 sputtering target Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title 1
- 239000000843 powder Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 12
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000002904 solvent Substances 0.000 claims abstract description 5
- 238000000465 moulding Methods 0.000 claims abstract 5
- 239000011812 mixed powder Substances 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 2
- 230000002706 hydrostatic effect Effects 0.000 claims description 2
- 238000000427 thin-film deposition Methods 0.000 claims 3
- 239000012300 argon atmosphere Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000002887 superconductor Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/82—Current path
Landscapes
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1990-10551 | 1990-07-12 | ||
| KR1019900010551A KR920009654B1 (ko) | 1990-07-12 | 1990-07-12 | 란탄늄 알루미네이트 박막 제조용 스퍼터링타켓의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04232219A true JPH04232219A (ja) | 1992-08-20 |
Family
ID=19301170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3171007A Withdrawn JPH04232219A (ja) | 1990-07-12 | 1991-07-11 | ランタンアルミネート薄膜堆積用スパッタリングターゲットの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH04232219A (ko) |
| KR (1) | KR920009654B1 (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010128629A1 (ja) * | 2009-05-07 | 2010-11-11 | Jx日鉱日石金属株式会社 | 酸化物焼結体スパッタリングターゲット、同ターゲットの製造方法、酸化物からなるゲート絶縁膜及び同ゲート絶縁膜の熱処理方法 |
| CN116497324A (zh) * | 2023-06-09 | 2023-07-28 | 深圳市汉嵙新材料技术有限公司 | 复合钙钛矿靶材及其制备方法、钙钛矿太阳电池的制备方法 |
-
1990
- 1990-07-12 KR KR1019900010551A patent/KR920009654B1/ko not_active IP Right Cessation
-
1991
- 1991-07-11 JP JP3171007A patent/JPH04232219A/ja not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010128629A1 (ja) * | 2009-05-07 | 2010-11-11 | Jx日鉱日石金属株式会社 | 酸化物焼結体スパッタリングターゲット、同ターゲットの製造方法、酸化物からなるゲート絶縁膜及び同ゲート絶縁膜の熱処理方法 |
| JP5234861B2 (ja) * | 2009-05-07 | 2013-07-10 | Ｊｘ日鉱日石金属株式会社 | 酸化物焼結体スパッタリングターゲット及び同ターゲットの製造方法 |
| CN116497324A (zh) * | 2023-06-09 | 2023-07-28 | 深圳市汉嵙新材料技术有限公司 | 复合钙钛矿靶材及其制备方法、钙钛矿太阳电池的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920003570A (ko) | 1992-02-29 |
| KR920009654B1 (ko) | 1992-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981008 |