JPH01305580A - 半導体素子製造用超電導セラミック薄膜形成単結晶ウエハー材 - Google Patents

半導体素子製造用超電導セラミック薄膜形成単結晶ウエハー材

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Publication number
JPH01305580A
JPH01305580A JP63136731A JP13673188A JPH01305580A JP H01305580 A JPH01305580 A JP H01305580A JP 63136731 A JP63136731 A JP 63136731A JP 13673188 A JP13673188 A JP 13673188A JP H01305580 A JPH01305580 A JP H01305580A
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Japan
Prior art keywords
thin film
wafer material
ceramic thin
forming
component
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Pending
Application number
JP63136731A
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English (en)
Inventor
Tadashi Sugihara
杉原　忠
Takuo Takeshita
武下　拓夫
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Mitsubishi Metal Corp
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Mitsubishi Metal Corp
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Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP63136731A priority Critical patent/JPH01305580A/ja
Priority claimed from JP1187153A external-priority patent/JPH0350195A/ja
Priority to US07/391,422 priority patent/US4968664A/en
Priority to EP19890114897 priority patent/EP0412199B1/en
Publication of JPH01305580A publication Critical patent/JPH01305580A/ja
Pending legal-status Critical Current

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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4512—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing thallium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
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    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
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    • Y10S505/702—Josephson junction present
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
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  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［産業上の利用分野〕 この発明は、ＬＳＩやジョセフソン素子などの半導体素
子の製造に用いられる超電導セラミック薄膜形成単結晶
ウェハー材に関するものである。
〔従来の技術〕
従来、Ｔｌ−Ｃａ　−Ｂａ　−Ｃｕ　−０の５成分系超
電導セラミックスのターケラト材を用い、スパッタリン
グ法や物理蒸着法などにて、ＳｉやＧａ−Ａｓなとの単
結晶ウェハー材の表面に超電導セラミック薄膜（以下超
電導薄膜という）を蒸着形成し、ついで前記薄膜の結晶
配向を行なう目的で、これに酸素雰囲気中、９００℃±
２℃の温度に２０〜５０時間保持の条件て熱処理を施す
ことにより、超電導セラミック薄膜形成単結晶ウェハー
拐（以下、超電導薄膜形成ウェハー材という）を製造し
、これをＬＳＩやジョセフソン素子などの半導体素子の
製造に用いる試みかなされている。
〔発明が解決しようとする課題〕
一方、近年の半導体素子の高性能化および高密度化に伴
い、超電導薄膜形成ウェハー材における超電導薄膜にも
一段と高い臨界温度（Ｔｃ）をもつことが強く要求され
るようになっている。
〔課題を解決するための手段〕
そこで、本発明者等は、上述のような観点から、超電導
薄膜形成ウェハー制における超電導薄膜の臨界温度の向
上をはかるべく研究を行なった結果、ＳｊやＧａ−Ａｓ
なとの弔結晶つェハー利の表面に、Ｔ、Ｑ　−Ｃａ　−
Ｂａ　−Ｃｕ　−０の５成分系超電導薄膜を形成するに
先たって、中間層として、望ましくは５００−２０００
人の厚さで、Ｔｃ−Ｃａ　−Ｂａ−０の４成分系セラミ
ック薄膜を形成しておくと、結晶配向熱処理後の超電導
薄膜形成ウェハー祠における超電導薄膜は一段と高い臨
界温度をもつようになるという知見を得たのである。
この発明は、上記知見にもとづいてなされたものであっ
て、ＳｉやＧａ−Ａｓなどの単結晶ウェハー材の表面に
、望ましくは５００〜２０００への厚さで形成したＴｃ
−Ｃａ−Ｂａ　−○の４成分系中間セラミック薄膜（以
下中間薄膜という）を介して、Ｔｃ−Ｃａ　−Ｂａ　−
Ｃｕ　−０の５成分系超電導薄膜を形成してなる超電導
薄膜形成ウェハー利に特徴を有するものである。
なお、この発明の超電導薄膜形成ウェハー祠における中
間薄膜の望ましい厚さを５００〜２０００八としたのは
、その厚さか５００八未満ては所望の臨界温度向上効果
が得られず、一方その厚さか２０００八を越えても、超
電導薄膜の臨界温度向上効果か飽和腰これ以上の厚さの
形成は経済的でないとり１つ理由にもとづくものである
。
〔実　施　例〕
つぎに、この発明の超電導薄膜形成ウニ／＼−祠を実施
例により具体的に説明する。
まず、基板として直径＋５０．０ｍｍＸ厚さ：　ＯＪ５
ｍｍのＳｊ単単結晶ウェハ月利用意し、これを通常のス
パッタリング装置に装着し、直径：　１２７　ｎ＋ｍＸ
厚さ＋６ｍｍの寸法、並びにＴｃ２Ｃａ２Ｂａ２０７の
組成を有するターゲット材を用い、 高周波型カニ　２００　Ｗ、　　！空席：　２０ｍ　Ｌ
ｏｒｒ。
雰囲気ガス：　Ｏ／　（Ａｒ　＋　０２　）−容量比で
１１５゜ 基板−ターゲツト材間の距離：　７０ｍ。
基板温度二６８０℃。
の条件でスパッタリングを行ない、前記基板の表面に厚
さ＋　ｔｏｏｏ人のＴｃ−Ｃａ−Ｂａ−一　　３　− 〇の４成分系中間薄膜を形成し、引続いて、直径：］２
７ｍｍＸ厚さ＋６ｍｍの寸法、並びにＴ（１２，３Ｃａ
　２　Ｂ　ａ　２　Ｃｕ　３．ｅ　Ｏ）’の組成を有す
るターゲツト材を用い、 高周波電力＋　２００　Ｗ、　　真空度；　ｌＯｍｔｏ
ｒｒ。
雰囲気ガス：０　／（Ａｒ＋０２）＝容量比で１／１０
゜ 基板−ターゲット月間の距離：　７０ｍｍ。
基板温度・７２０℃。
の条件でスパッタリングを行ない、上記中間薄膜の上に
、厚さ：１ｕｍのＴｃ−Ｃａ　−Ｂａ　−Ｃｕ　−Ｏの
５成分系超電導薄膜を形成し、さらにこれに、酸素含有
雰囲気中、温度＝９００℃に３５時間保持の条件で結晶
配向熱処理を施すことにより本発明超電導薄膜形成ウェ
ハー材を製造した。
また、比較の目的で、上記中間薄膜の形成を行なわない
以外は同一の条件で従来超電導薄膜形成ウェハー材を製
造した。
ついて、この結果得られた本発明超電導薄膜形成ウェハ
ー材および従来超電導薄膜形成ウェハー一　　４　− 材の超電導薄膜の臨界温度（Ｔｃ）を測定したところ、
前者は１１０°に１後者は７５°Ｋをそれぞれ示した。
〔発明の効果〕
以上の結果から、本発明超電導薄膜形成ウェハー材にお
いては、Ｔｃ−Ｃａ−Ｂａ−０の４成分系中間薄膜の存
在によってＴｃ−Ｃａ−Ｂａ−Ｃｕ−０の５成分系超電
導薄膜が前記中間薄膜の形成かない従来超電導薄膜形成
ウエノへ−材の超電導薄膜に比して一段と高い臨界温度
をもつようになることが明らかである。
上述のように、この発明の超電導セラミック薄膜形成単
結晶ウェハー材は、これを構成する超電導セラミック薄
膜が著しく高い臨界温度を示すので、これより製造され
た半導体素子は、これの高性能化および高密度化に十分
満足して対応することができるようになるなどの工業上
有用な特性を有するのである。
出願０二　三菱金属株式会社

Claims (1)

    【特許請求の範囲】
  1. （１）ＳｉやＧａ−Ａｓなどの単結晶ウェハー材の表面
    に、Ｔｌ−Ｃａ−Ｂａ−Ｏの４成分系中間セラミック薄
    膜を介して、Ｔｌ−Ｃａ−Ｂａ−Ｃｕ−Ｏの５成分系超
    電導セラミック薄膜を形成してなる半導体素子製造用超
    電導セラミック薄膜形成単結晶ウェハー材。
JP63136731A 1988-06-03 1988-06-03 半導体素子製造用超電導セラミック薄膜形成単結晶ウエハー材 Pending JPH01305580A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP63136731A JPH01305580A (ja) 1988-06-03 1988-06-03 半導体素子製造用超電導セラミック薄膜形成単結晶ウエハー材
US07/391,422 US4968664A (en) 1988-06-03 1989-08-09 Single-crystal wafer having a superconductive ceramic thin film formed thereon
EP19890114897 EP0412199B1 (en) 1988-06-03 1989-08-11 Single-crystal wafer having a superconductive ceramic thin film formed thereon

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63136731A JPH01305580A (ja) 1988-06-03 1988-06-03 半導体素子製造用超電導セラミック薄膜形成単結晶ウエハー材
JP1187153A JPH0350195A (ja) 1989-07-19 1989-07-19 半導体素子製造用超電導セラミック薄膜形成単結晶ウエハー材
US07/391,422 US4968664A (en) 1988-06-03 1989-08-09 Single-crystal wafer having a superconductive ceramic thin film formed thereon

Publications (1)

Publication Number Publication Date
JPH01305580A true JPH01305580A (ja) 1989-12-08

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Country Link
US (1) US4968664A (ja)
EP (1) EP0412199B1 (ja)
JP (1) JPH01305580A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034359A (en) * 1988-04-08 1991-07-23 Kabushiki Kaisha Toshiba Insulating composition
US5252548A (en) * 1989-06-09 1993-10-12 Oki Electric Industry Co., Ltd. Method of forming an oxide superconductor/semiconductor junction
US5053384A (en) * 1989-07-21 1991-10-01 Iowa State University Research Foundation, Inc. Method of producing superconducting fibers of bismuth strontium calcium copper oxide (Bi(2212) and Bi(2223))
JP2790494B2 (ja) * 1989-10-13 1998-08-27 松下電器産業株式会社 超伝導素子
DE4124048C2 (de) * 1991-07-19 1995-02-02 Mueller Paul Supraleitfähiges Bauelement mit einem Josephsonkontakt in einem monokristallinen Hochtemperatursupraleiter und Verfahren zu dessen Herstellung
US5304538A (en) * 1992-03-11 1994-04-19 The United States Of America As Repeated By The Administrator Of The National Aeronautics And Space Administration Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors
JP3037514B2 (ja) * 1992-09-29 2000-04-24 松下電器産業株式会社 薄膜超伝導体及びその製造方法
JP2004182570A (ja) * 2002-12-05 2004-07-02 Dowa Mining Co Ltd 酸化物超電導体厚膜およびその製造方法
EP1566849A1 (en) * 2004-02-20 2005-08-24 Dowa Mining Co., Ltd. Oxide superconductor thick film and method for manufacturing same

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