JPH04232219A - Preparation of sputtering target for piling lanthanum aluminate thin film - Google Patents
Preparation of sputtering target for piling lanthanum aluminate thin filmInfo
- Publication number
- JPH04232219A JPH04232219A JP3171007A JP17100791A JPH04232219A JP H04232219 A JPH04232219 A JP H04232219A JP 3171007 A JP3171007 A JP 3171007A JP 17100791 A JP17100791 A JP 17100791A JP H04232219 A JPH04232219 A JP H04232219A
- Authority
- JP
- Japan
- Prior art keywords
- lanthanum aluminate
- thin film
- sputtering target
- powder
- lanthanum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052746 lanthanum Inorganic materials 0.000 title claims abstract description 38
- -1 lanthanum aluminate Chemical class 0.000 title claims abstract description 38
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000005477 sputtering target Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title 1
- 239000000843 powder Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 12
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000002904 solvent Substances 0.000 claims abstract description 5
- 238000000465 moulding Methods 0.000 claims abstract 5
- 239000011812 mixed powder Substances 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 2
- 230000002706 hydrostatic effect Effects 0.000 claims description 2
- 238000000427 thin-film deposition Methods 0.000 claims 3
- 239000012300 argon atmosphere Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000002887 superconductor Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/82—Current path
Landscapes
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はスパッタリングターゲッ
トの製造方法に関し、特に高周波マグネトロンスパッタ
リング（Ｒａｄｉｏ Ｆｒｅｑｕｅｎｃｙ Ｍａｇ
ｎｅｔｒｏｎ Ｓｐｕｔｔｅｒｉｎｇ）法によってラ
ンタンアルミネート（ＬａＡｌＯ３ ，Ｌａｎｔｈａｎ
ｕｍ ａｌｕｍｉｎａｔｅ）薄膜を堆積するに用いる
ためのランタンアルミネートスパッタリングターゲット
の製造方法に関する。TECHNICAL FIELD The present invention relates to a method for manufacturing a sputtering target, and in particular to a method for manufacturing a sputtering target, and in particular a method for manufacturing a sputtering target using radio frequency magnetron sputtering (Radio Frequency Mag sputtering).
Lanthanum aluminate (LaAlO3,Lanthan
The present invention relates to a method of making a lanthanum aluminate sputtering target for use in depositing thin films.
【０００２】0002
【従来の技術】最近開発されたＹＢａ２ Ｃｕ３ Ｏ７
−ｘ 等の高温超伝導体薄膜をシリコン基板の上面に堆
積するためには、基板と高温超伝導体薄膜の界面におけ
る界面化学反応を防ぎ、高温超伝導体薄膜のエピタキシ
ャル成長が可能なバッファ層をシリコン基板と超伝導体
薄膜との間に堆積させなければならない。このバッファ
層は半導体デバイスへの応用に適合し得る電気的特性を
ももたなければならない。[Prior Art] Recently developed YBa2 Cu3 O7
In order to deposit a high-temperature superconductor thin film such as - It must be deposited between the silicon substrate and the superconductor thin film. This buffer layer must also have electrical properties compatible with semiconductor device applications.
【０００３】そして、このようなバッファ層としては誘
電率と誘電損失が小さく、結晶構造，格子定数，熱膨張
係数等が高温超伝導体薄膜とほとんど同様のランタンア
ルミネート薄膜が最も適当なものとして知られている。[0003]The most suitable buffer layer for such a buffer layer is a lanthanum aluminate thin film, which has a small dielectric constant and dielectric loss, and has a crystal structure, lattice constant, coefficient of thermal expansion, etc. that are almost the same as those of a high-temperature superconductor thin film. Are known.
【０００４】0004
【発明が解決しようとする課題】しかし、シリコン基板
とランタンアルミネート薄膜との熱膨張係数の差が大き
いため、シリコン基板上のランタンアルミネート薄膜の
表面に多くの亀裂が発生する問題点があった。[Problems to be Solved by the Invention] However, since there is a large difference in thermal expansion coefficient between the silicon substrate and the lanthanum aluminate thin film, there is a problem in that many cracks occur on the surface of the lanthanum aluminate thin film on the silicon substrate. Ta.
【０００５】従って、本発明はシリコン基板上に高温超
伝導体薄膜を堆積するために要求されるバッファ層とし
てのランタンアルミネート薄膜堆積用スパッタリングタ
ーゲットの製造方法を提供することをその目的とする。Accordingly, it is an object of the present invention to provide a method for manufacturing a sputtering target for depositing a lanthanum aluminate thin film as a buffer layer required for depositing a high temperature superconductor thin film on a silicon substrate.
【０００６】[0006]
【課題を解決するための手段】このために、本発明は酸
化ランタン粉末と酸化アルミニウム粉末をアセトンを溶
媒として混合粉末を作り、上記の混合粉末を昇温と冷却
の熱処理工程を通じてランタンアルミネート粉末を形成
する。[Means for Solving the Problems] To this end, the present invention prepares a mixed powder of lanthanum oxide powder and aluminum oxide powder using acetone as a solvent, and processes the above mixed powder through a heat treatment process of heating and cooling to form lanthanum aluminate powder. form.
【０００７】そして、ランタンアルミネート粉末を成型
した成型体を昇温と冷却の熱処理をした後、焼結工程を
経て焼結体を形成して高温熱処理することにより、ラン
タンアルミネートスパッタリングターゲットを製造する
ものである。A lanthanum aluminate sputtering target is then produced by heat-treating the molded body made of lanthanum aluminate powder by heating and cooling it, forming a sintered body through a sintering process, and subjecting it to high-temperature heat treatment. It is something to do.
【０００８】[0008]
【作用】亀裂がなく平滑な表面を有するランタンアルミ
ネート薄膜をシリコン基板上に堆積するために高周波マ
グネトロンスパッタリング法を利用してランタンアルミ
ネート薄膜を堆積し、その上にＹＢａ２ Ｃｕ３ Ｏ７
−ｘ 高温超伝導体薄膜を堆積して、超高速半導体配線
や超高速低電力のジョセフトン素子（Ｊｏｓｅｐｈｓｏ
ｎｄｅｖｉｃｅ）等に活用することができる。[Operation] In order to deposit a lanthanum aluminate thin film with a smooth surface without cracks on a silicon substrate, a high frequency magnetron sputtering method is used to deposit a lanthanum aluminate thin film, and YBa2 Cu3 O7 is deposited on top of the lanthanum aluminate thin film.
-x High-temperature superconductor thin films are deposited to create ultra-high-speed semiconductor interconnects and ultra-high-speed, low-power Josephton devices.
It can be used for applications such as
【０００９】[0009]
【実施例】以下に本発明を詳細に説明する。EXAMPLES The present invention will be explained in detail below.
【００１０】酸化ランタン（Ｌａ２ Ｏ３ ）粉末と酸
化アルミニウム（Ａｌ２ Ｏ３ ）粉末をモル比で１：
１になるよう秤量し、アルミナ（Ａｌｕｍｉｎａ）製の
ボールミル（ｂａｌｌ ｍｉｌｌ）で、アセトンを溶
媒として、秤量された酸化ランタン粉末と酸化アルミニ
ウム粉末の混合粉末を２４時間ボールミリングする。ボ
ールミリング工程を経た混合粉末を２４時間空気中で乾
燥し、アセトンを蒸発除去する。この乾燥した混合粉末
をアルミナるつぼに入れて空気雰囲気中で１０℃／分の
速度で１５５０〜１７００℃まで昇温して２〜４時間維
持し、次いで５℃／分の速度で常温まで冷却してランタ
ンアルミネート粉末を得る。Lanthanum oxide (La2O3) powder and aluminum oxide (Al2O3) powder in a molar ratio of 1:
The mixed powder of lanthanum oxide powder and aluminum oxide powder was ball milled for 24 hours using acetone as a solvent in a ball mill made by Alumina. The mixed powder that has undergone the ball milling process is dried in the air for 24 hours to remove acetone by evaporation. This dry mixed powder was placed in an alumina crucible, heated to 1550 to 1700°C at a rate of 10°C/min in an air atmosphere, maintained for 2 to 4 hours, and then cooled to room temperature at a rate of 5°C/min. to obtain lanthanum aluminate powder.
【００１１】そして、上記のランタンアルミネート粉末
を直径５ｃｍの金型枠に充填し、一次圧力を加えて成型
し、さらにゴム容器に内蔵して、室温で静水圧を加えな
がら成型する。ランタンアルミネート粉末の加圧成型体
をアルゴン（Ａｒ）雰囲気で５℃／分の速度で１７００
〜１９００℃まで昇温した後、２時間焼結して８℃／分
で常温まで冷却する。[0011]The above lanthanum aluminate powder is then filled into a mold frame with a diameter of 5 cm, molded by applying primary pressure, and then placed in a rubber container and molded at room temperature while applying hydrostatic pressure. A pressure molded body of lanthanum aluminate powder was heated to 1700 at a rate of 5°C/min in an argon (Ar) atmosphere.
After raising the temperature to ~1900°C, it is sintered for 2 hours and cooled to room temperature at a rate of 8°C/min.
【００１２】上記のような焼結工程を経て得た直径４ｃ
ｍ、厚さ５ｍｍのディスク状の焼結体を、さらに空気雰
囲気中で１５００℃の温度、３時間熱処理する。焼結工
程の間に欠乏した酸素がこの工程によって焼結体に補充
され、本発明によるランタンアルミネートスパッタリン
グターゲットが製造される。[0012] Diameter 4c obtained through the above sintering process
The disc-shaped sintered body having a thickness of 5 mm and a thickness of 5 mm is further heat-treated at a temperature of 1500° C. for 3 hours in an air atmosphere. Oxygen depleted during the sintering process is replenished into the sintered body by this process, producing a lanthanum aluminate sputtering target according to the invention.
【００１３】図１に示すように、上記のような製造工程
により製造されたランタンアルミネートスパッタリング
ターゲット（１）をスパッタリングチャンバー（４）内
のターゲットホルダー（２）に取り付けた後、ランタン
アルミネートスパッタリングターゲット（１）と２０〜
５０ｍｎの距離を隔てた状態でシリコン基板（３）を平
行に装着してスパッタリングを施す。As shown in FIG. 1, after the lanthanum aluminate sputtering target (1) manufactured by the above manufacturing process is attached to the target holder (2) in the sputtering chamber (4), the lanthanum aluminate sputtering target is Target (1) and 20~
Sputtering is performed with silicon substrates (3) mounted in parallel with a distance of 50 mm between them.
【００１４】上述した処理によって、シリコン基板（３
）の上面に亀裂がなく、表面が平滑なランタンアルミネ
ート薄膜を堆積することができる。By the above-described process, the silicon substrate (3
) can deposit a lanthanum aluminate thin film with no cracks and a smooth surface.
【００１５】[0015]
【発明の効果】以上説明したように、本発明によるラン
タンアルミネートスパッタリングターゲットの製造方法
により製造されたランタンアルミネートスパッタリング
ターゲット（１）を利用してスパッタリングチャンバー
（４）内でスパッタリングを施してランタンアルミネー
ト薄膜をシリコン基板（３）上に堆積することにより、
その上にＹＢａ２ Ｃｕ３ Ｏ７−ｘ 高温超伝導体薄
膜を堆積して超高速半導体配線や超高速・低電力のジョ
セフソン素子等に活用することができる。Effects of the Invention As explained above, sputtering is performed in the sputtering chamber (4) using the lanthanum aluminate sputtering target (1) manufactured by the method for manufacturing a lanthanum aluminate sputtering target according to the present invention. By depositing an aluminate thin film on a silicon substrate (3),
A YBa2 Cu3 O7-x high-temperature superconductor thin film is deposited thereon and can be utilized for ultra-high-speed semiconductor wiring, ultra-high-speed, low-power Josephson devices, etc.
【図１】本発明のランタンアルミネート薄膜を製造する
ためにスパッタリングターゲットをチャンバーに装着し
た状態を示す概略図である。FIG. 1 is a schematic view showing a sputtering target installed in a chamber for producing the lanthanum aluminate thin film of the present invention.
１ ターゲット ２ ターゲットホルダー ３ シリコン基板 ４ スパッタリングチャンバー 1 Target 2 Target holder 3 Silicon substrate 4 Sputtering chamber
Claims (8)
末と酸化アルミニウム粉末の混合粉末を作り、該混合粉
末を熱処理してランタンアルミネート粉末を得る第１工
程と；前記ランタンアルミネート粉末を成型し、該成型
体を焼結処理して焼結体を形成し、該焼結体を高温熱処
理する第２工程とを有することを特徴とするランタンア
ルミネート薄膜堆積用スパッタリングターゲットの製造
方法。1. A first step of preparing a mixed powder of lanthanum oxide powder and aluminum oxide powder using acetone as a solvent and heat-treating the mixed powder to obtain lanthanum aluminate powder; molding the lanthanum aluminate powder; A method for producing a sputtering target for depositing a lanthanum aluminate thin film, comprising the steps of sintering a molded body to form a sintered body, and heat-treating the sintered body at a high temperature.
化アルミニウム粉末が１：１のモル比で構成されること
を特徴とする請求項１に記載のランタンアルミネート薄
膜堆積用スパッタリングターゲットの製造方法。2. The method of manufacturing a sputtering target for depositing a lanthanum aluminate thin film according to claim 1, wherein the mixed powder is composed of lanthanum oxide powder and aluminum oxide powder in a molar ratio of 1:1.
２４時間ボールミリングして得られることを特徴とする
請求項１または２に記載のランタンアルミネート薄膜堆
積用スパッタリングターゲットの製造方法。3. The method for producing a sputtering target for lanthanum aluminate thin film deposition according to claim 1, wherein the mixed powder is obtained by ball milling for 24 hours using acetone as a solvent.
分の速度で１５５０℃〜１７００℃まで昇温し、前記温
度を２〜４時間維持し、さらに５℃／分の速度で常温ま
で冷却することを特徴とする請求項１ないし３のいずれ
かに記載のランタンアルミネート薄膜堆積用スパッタリ
ングターゲットの製造方法。[Claim 4] The heat treatment step is carried out at 1°C/
4. The method according to claim 1, wherein the temperature is raised to 1550°C to 1700°C at a rate of 150°C per minute, the temperature is maintained for 2 to 4 hours, and the temperature is further cooled to room temperature at a rate of 5°C per minute. A method for manufacturing a sputtering target for lanthanum aluminate thin film deposition as described.
、さらにゴム容器に入れて静水圧を加えて成型すること
を特徴とする請求項１ないし４のいずれかに記載のラン
タンアルミネート薄膜堆積用スパッタリングターゲット
の製造方法。5. The lanthanum aluminate according to any one of claims 1 to 4, wherein the molding step is performed by applying uniaxial pressure in a mold frame, and further molding the product by placing it in a rubber container and applying hydrostatic pressure. A method for manufacturing a sputtering target for thin film deposition.
００℃〜１９００℃まで昇温し、前記温度で２時間焼結
し、８℃／分の速度で常温まで冷却することを特徴とす
る請求項１ないし５のいずれかに記載のランタンアルミ
ネート薄膜堆積用スパッタリングターゲットの製造方法
。6. The sintering process is performed at a rate of 17° C./min.
The lanthanum aluminate thin film according to any one of claims 1 to 5, wherein the lanthanum aluminate thin film is heated to 00°C to 1900°C, sintered at the temperature for 2 hours, and cooled to room temperature at a rate of 8°C/min. A method for manufacturing a sputtering target for deposition.
れることを特徴とする請求項６に記載のランタンアルミ
ネート薄膜堆積用スパッタリングターゲットの製造方法
。7. The method of manufacturing a sputtering target for depositing a lanthanum aluminate thin film according to claim 6, wherein the sintering step is performed in an argon atmosphere.
雰囲気中で３時間施されることを特徴とする請求項１な
いし７のいずれかに記載のランタンアルミネート薄膜堆
積用スパッタリングターゲットの製造方法。8. The method for manufacturing a sputtering target for depositing a lanthanum aluminate thin film according to claim 1, wherein the high temperature treatment step is performed in an air atmosphere at 1500° C. for 3 hours.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1990-10551 | 1990-07-12 | ||
| KR1019900010551A KR920009654B1 (en) | 1990-07-12 | 1990-07-12 | Lanthanum aluminate thin film manufacturing sputtering target manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04232219A true JPH04232219A (en) | 1992-08-20 |
Family
ID=19301170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3171007A Withdrawn JPH04232219A (en) | 1990-07-12 | 1991-07-11 | Preparation of sputtering target for piling lanthanum aluminate thin film |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH04232219A (en) |
| KR (1) | KR920009654B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010128629A1 (en) * | 2009-05-07 | 2010-11-11 | Jx日鉱日石金属株式会社 | Oxide sintered body sputtering target, method for producing the target, gate insulating film formed from oxide, and method for heat-treating the gate insulating film |
| CN116497324A (en) * | 2023-06-09 | 2023-07-28 | 深圳市汉嵙新材料技术有限公司 | Composite perovskite target material, preparation method thereof and preparation method of perovskite solar cell |
-
1990
- 1990-07-12 KR KR1019900010551A patent/KR920009654B1/en not_active IP Right Cessation
-
1991
- 1991-07-11 JP JP3171007A patent/JPH04232219A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010128629A1 (en) * | 2009-05-07 | 2010-11-11 | Jx日鉱日石金属株式会社 | Oxide sintered body sputtering target, method for producing the target, gate insulating film formed from oxide, and method for heat-treating the gate insulating film |
| JP5234861B2 (en) * | 2009-05-07 | 2013-07-10 | Ｊｘ日鉱日石金属株式会社 | Oxide sintered body sputtering target and method of manufacturing the same |
| CN116497324A (en) * | 2023-06-09 | 2023-07-28 | 深圳市汉嵙新材料技术有限公司 | Composite perovskite target material, preparation method thereof and preparation method of perovskite solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920009654B1 (en) | 1992-10-22 |
| KR920003570A (en) | 1992-02-29 |
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