JPH04218920A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法Info
- Publication number
- JPH04218920A JPH04218920A JP3072810A JP7281091A JPH04218920A JP H04218920 A JPH04218920 A JP H04218920A JP 3072810 A JP3072810 A JP 3072810A JP 7281091 A JP7281091 A JP 7281091A JP H04218920 A JPH04218920 A JP H04218920A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- wiring layer
- semiconductor device
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000007747 plating Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 373
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 239000011229 interlayer Substances 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3072810A JPH04218920A (ja) | 1990-06-05 | 1991-04-05 | 半導体装置及びその製造方法 |
| KR1019910009003A KR930008868B1 (ko) | 1990-06-05 | 1991-05-31 | 다층상호 연결구조를 갖는 반도체장치와 그 제조 방법 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2-146754 | 1990-06-05 | ||
| JP14675490 | 1990-06-05 | ||
| JP2-146753 | 1990-06-05 | ||
| JP14675390 | 1990-06-05 | ||
| JP3072810A JPH04218920A (ja) | 1990-06-05 | 1991-04-05 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04218920A true JPH04218920A (ja) | 1992-08-10 |
Family
ID=27301044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3072810A Pending JPH04218920A (ja) | 1990-06-05 | 1991-04-05 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH04218920A (ko) |
| KR (1) | KR930008868B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012033896A (ja) * | 2010-06-29 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 配線基板、半導体装置、及びそれらの作製方法 |
-
1991
- 1991-04-05 JP JP3072810A patent/JPH04218920A/ja active Pending
- 1991-05-31 KR KR1019910009003A patent/KR930008868B1/ko not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012033896A (ja) * | 2010-06-29 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 配線基板、半導体装置、及びそれらの作製方法 |
| US9437454B2 (en) | 2010-06-29 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Wiring board, semiconductor device, and manufacturing methods thereof |
| JP2016167629A (ja) * | 2010-06-29 | 2016-09-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9875910B2 (en) | 2010-06-29 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Wiring board, semiconductor device, and manufacturing methods thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930008868B1 (ko) | 1993-09-16 |
| KR920001706A (ko) | 1992-01-30 |
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