JPH0419707B2 - - Google Patents

Info

Publication number
JPH0419707B2
JPH0419707B2 JP56174307A JP17430781A JPH0419707B2 JP H0419707 B2 JPH0419707 B2 JP H0419707B2 JP 56174307 A JP56174307 A JP 56174307A JP 17430781 A JP17430781 A JP 17430781A JP H0419707 B2 JPH0419707 B2 JP H0419707B2
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon
silica
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56174307A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5874043A (ja
Inventor
Manzo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56174307A priority Critical patent/JPS5874043A/ja
Publication of JPS5874043A publication Critical patent/JPS5874043A/ja
Publication of JPH0419707B2 publication Critical patent/JPH0419707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP56174307A 1981-10-29 1981-10-29 半導体装置 Granted JPS5874043A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56174307A JPS5874043A (ja) 1981-10-29 1981-10-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56174307A JPS5874043A (ja) 1981-10-29 1981-10-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS5874043A JPS5874043A (ja) 1983-05-04
JPH0419707B2 true JPH0419707B2 (cs) 1992-03-31

Family

ID=15976364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56174307A Granted JPS5874043A (ja) 1981-10-29 1981-10-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS5874043A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246652A (ja) * 1984-05-22 1985-12-06 Nec Corp 平坦化導電体配線の形成方法
JPH0770533B2 (ja) * 1985-04-17 1995-07-31 セイコーエプソン株式会社 半導体装置の製造方法
JPS63207168A (ja) * 1987-02-24 1988-08-26 Seiko Epson Corp Ｍｏｓ型半導体集積回路装置
FR2625839B1 (fr) * 1988-01-13 1991-04-26 Sgs Thomson Microelectronics Procede de passivation d'un circuit integre

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133575A (en) * 1974-09-17 1976-03-22 Nippon Telegraph & Telephone Tasohaisenkozo
JPS5214365A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Process for formation of insulating membrane by spreading

Also Published As

Publication number Publication date
JPS5874043A (ja) 1983-05-04

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