JPH041338B2 - - Google Patents

Info

Publication number
JPH041338B2
JPH041338B2 JP22613985A JP22613985A JPH041338B2 JP H041338 B2 JPH041338 B2 JP H041338B2 JP 22613985 A JP22613985 A JP 22613985A JP 22613985 A JP22613985 A JP 22613985A JP H041338 B2 JPH041338 B2 JP H041338B2
Authority
JP
Japan
Prior art keywords
photomask
protective film
photoresist
contact
minutes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP22613985A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6285251A (ja
Inventor
Shigeyoshi Suzuki
Kazuto Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60226139A priority Critical patent/JPS6285251A/ja
Publication of JPS6285251A publication Critical patent/JPS6285251A/ja
Publication of JPH041338B2 publication Critical patent/JPH041338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP60226139A 1985-10-09 1985-10-09 ホトマスクの保護膜形成方法 Granted JPS6285251A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60226139A JPS6285251A (ja) 1985-10-09 1985-10-09 ホトマスクの保護膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60226139A JPS6285251A (ja) 1985-10-09 1985-10-09 ホトマスクの保護膜形成方法

Publications (2)

Publication Number Publication Date
JPS6285251A JPS6285251A (ja) 1987-04-18
JPH041338B2 true JPH041338B2 (enExample) 1992-01-10

Family

ID=16840459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60226139A Granted JPS6285251A (ja) 1985-10-09 1985-10-09 ホトマスクの保護膜形成方法

Country Status (1)

Country Link
JP (1) JPS6285251A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123232A (ja) * 1987-11-09 1989-05-16 Mitsubishi Electric Corp パターン形成方法
DE69029503T2 (de) * 1989-10-13 1997-05-22 Toshiba Kawasaki Kk Aperturenmuster-Flachdruckplatte zur Herstellung einer Schattenmaske und Verfahren zur Herstellung dieser Maske
JP2002214761A (ja) * 2001-01-16 2002-07-31 Dainippon Printing Co Ltd フォトリソグラフィー用フォトマスクおよびその製造方法
US6566021B2 (en) 2001-07-26 2003-05-20 Micro Lithography, Inc. Fluoropolymer-coated photomasks for photolithography
JP2011206720A (ja) * 2010-03-30 2011-10-20 Hitachi High-Technologies Corp ドライ完結型有機el用マスククリーナ装置及びそのためのマスククリーニング方法
KR102138960B1 (ko) 2016-01-27 2020-07-28 주식회사 엘지화학 필름 마스크, 이의 제조방법, 이를 이용한 패턴 형성 방법 및 이를 이용하여 형성된 패턴
WO2017131499A1 (ko) 2016-01-27 2017-08-03 주식회사 엘지화학 필름 마스크, 이의 제조방법, 이를 이용한 패턴 형성 방법 및 이를 이용하여 형성된 패턴
EP3410213B1 (en) * 2016-01-27 2021-05-26 LG Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask

Also Published As

Publication number Publication date
JPS6285251A (ja) 1987-04-18

Similar Documents

Publication Publication Date Title
JPH0456981B2 (enExample)
US3520683A (en) Photoresist method and products produced thereby
JPS58139430A (ja) レジストの剥離法
WO2012133597A1 (ja) 多層レジストプロセスパターン形成方法及び多層レジストプロセス用無機膜形成組成物
JPH041338B2 (enExample)
JP2008524374A (ja) シロキサン樹脂コーティング
TWI223126B (en) Method for forming fine pattern and resist surface treatment agent
WO2010087233A1 (ja) シリコン含有膜、樹脂組成物およびパターン形成方法
JPS62281331A (ja) エツチング方法
JP4946787B2 (ja) レジスト下層膜用組成物及びその製造方法
NL8203980A (nl) Werkwijze voor de fotolithografische behandeling van een substraat.
JPH02263981A (ja) 被膜形成方法
JPH11258792A5 (enExample)
JP2003297740A (ja) 微細パターン形成方法
CN101863624A (zh) 合成石英玻璃衬底的微处理
JP2529685B2 (ja) 装置の製造方法
CN103698973A (zh) 柔性光刻掩模板的制备方法
JP4836363B2 (ja) レジストパターンの形成方法
JPH08176177A (ja) Pt膜形成用組成物、並びに、この組成物より形成したPt膜及びPt膜パターン
JPH0624191B2 (ja) プラズマ処理方法
CN1365027A (zh) 利用普通紫外光深刻层光刻的分离曝光工艺方法
JPS6057218B2 (ja) 半導体装置の製造方法
JPH0876352A (ja) パターン形成方法
JPS6040695B2 (ja) フオトマスク
JP3483353B2 (ja) 酸化シリコン膜の形成方法およびパターン形成方法