JPH0412028B2 - - Google Patents
Info
- Publication number
- JPH0412028B2 JPH0412028B2 JP57500908A JP50090882A JPH0412028B2 JP H0412028 B2 JPH0412028 B2 JP H0412028B2 JP 57500908 A JP57500908 A JP 57500908A JP 50090882 A JP50090882 A JP 50090882A JP H0412028 B2 JPH0412028 B2 JP H0412028B2
- Authority
- JP
- Japan
- Prior art keywords
- die
- package
- copper
- semiconductor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 abstract description 56
- 229910052751 metal Inorganic materials 0.000 abstract description 54
- 239000002184 metal Substances 0.000 abstract description 54
- 229910000679 solder Inorganic materials 0.000 abstract description 40
- 239000010949 copper Substances 0.000 abstract description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 37
- 229910052802 copper Inorganic materials 0.000 abstract description 37
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 36
- 238000001465 metallisation Methods 0.000 abstract description 20
- 239000004593 Epoxy Substances 0.000 abstract description 5
- 239000008393 encapsulating agent Substances 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 49
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- 229910052719 titanium Inorganic materials 0.000 description 17
- 229910052759 nickel Inorganic materials 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 239000004033 plastic Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910000765 intermetallic Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- 238000007607 die coating method Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- NTSDHVIXFWZYSM-UHFFFAOYSA-N [Ag].[Sb].[Sn] Chemical compound [Ag].[Sb].[Sn] NTSDHVIXFWZYSM-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 150000001253 acrylic acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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- H01L2224/29111—Tin [Sn] as principal constituent
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- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/45001—Core members of the connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24678481A | 1981-03-23 | 1981-03-23 | |
US246784BRCH | 1981-03-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58500463A JPS58500463A (ja) | 1983-03-24 |
JPH0412028B2 true JPH0412028B2 (fr) | 1992-03-03 |
Family
ID=22932185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57500908A Granted JPS58500463A (ja) | 1981-03-23 | 1982-02-05 | めっきのしてないパッケ−ジを含む半導体デバイス |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0074378A4 (fr) |
JP (1) | JPS58500463A (fr) |
KR (1) | KR900001223B1 (fr) |
IT (1) | IT1147903B (fr) |
WO (1) | WO1982003294A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3401404A1 (de) * | 1984-01-17 | 1985-07-25 | Robert Bosch Gmbh, 7000 Stuttgart | Halbleiterbauelement |
GB2174063B (en) * | 1985-04-22 | 1988-08-17 | Philips Electronic Associated | Semiconductor device having a laser printable envelope |
JPS63253653A (ja) * | 1987-04-10 | 1988-10-20 | Citizen Watch Co Ltd | 樹脂封止型ピングリツドアレイ及びその製造方法 |
IT1252624B (it) * | 1991-12-05 | 1995-06-19 | Cons Ric Microelettronica | Dispositivo semiconduttore incapsulato in resina e elettricamente isolato di migliorate caratteristiche di isolamento,e relativo processo di fabbricazione |
JPH088446A (ja) * | 1995-05-25 | 1996-01-12 | Rohm Co Ltd | 個別ダイオード装置 |
US6821821B2 (en) * | 1996-04-18 | 2004-11-23 | Tessera, Inc. | Methods for manufacturing resistors using a sacrificial layer |
US6020636A (en) * | 1997-10-24 | 2000-02-01 | Eni Technologies, Inc. | Kilowatt power transistor |
US7696611B2 (en) | 2004-01-13 | 2010-04-13 | Halliburton Energy Services, Inc. | Conductive material compositions, apparatus, systems, and methods |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2984774A (en) * | 1956-10-01 | 1961-05-16 | Motorola Inc | Transistor heat sink assembly |
US3434018A (en) * | 1966-07-05 | 1969-03-18 | Motorola Inc | Heat conductive mounting base for a semiconductor device |
US3597666A (en) * | 1969-11-26 | 1971-08-03 | Fairchild Camera Instr Co | Lead frame design |
US3763403A (en) * | 1972-03-01 | 1973-10-02 | Gen Electric | Isolated heat-sink semiconductor device |
JPS5120323B2 (fr) * | 1972-08-08 | 1976-06-24 | ||
US3821615A (en) * | 1973-05-16 | 1974-06-28 | Solitron Devices | Long life lead frame means for semiconductor devices |
US3922712A (en) * | 1974-05-01 | 1975-11-25 | Gen Motors Corp | Plastic power semiconductor flip chip package |
JPS5315763A (en) * | 1976-07-28 | 1978-02-14 | Hitachi Ltd | Resin sealed type semiconductor device |
IN148328B (fr) * | 1977-04-18 | 1981-01-17 | Rca Corp | |
IT7821073V0 (it) * | 1978-03-09 | 1978-03-09 | Ates Componenti Elettron | Morsetto per il fissaggio di un dispositivo a semiconduttore ad un dissipatore di calore. |
JPS5516425A (en) * | 1978-07-21 | 1980-02-05 | Toshiba Corp | Semiconductor device |
JPS55127027A (en) * | 1979-03-26 | 1980-10-01 | Toshiba Corp | Semiconductor device |
-
1982
- 1982-02-05 EP EP19820900878 patent/EP0074378A4/fr not_active Withdrawn
- 1982-02-05 WO PCT/US1982/000154 patent/WO1982003294A1/fr not_active Application Discontinuation
- 1982-02-05 JP JP57500908A patent/JPS58500463A/ja active Granted
- 1982-03-11 KR KR8201045A patent/KR900001223B1/ko active
- 1982-03-16 IT IT48005/82A patent/IT1147903B/it active
Also Published As
Publication number | Publication date |
---|---|
KR900001223B1 (ko) | 1990-03-05 |
EP0074378A1 (fr) | 1983-03-23 |
WO1982003294A1 (fr) | 1982-09-30 |
IT1147903B (it) | 1986-11-26 |
IT8248005A0 (it) | 1982-03-16 |
EP0074378A4 (fr) | 1985-04-25 |
KR830009650A (ko) | 1983-12-22 |
JPS58500463A (ja) | 1983-03-24 |
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