JPH0390439U - - Google Patents

Info

Publication number
JPH0390439U
JPH0390439U JP1990089392U JP8939290U JPH0390439U JP H0390439 U JPH0390439 U JP H0390439U JP 1990089392 U JP1990089392 U JP 1990089392U JP 8939290 U JP8939290 U JP 8939290U JP H0390439 U JPH0390439 U JP H0390439U
Authority
JP
Japan
Prior art keywords
silicon layer
amorphous silicon
electrode
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990089392U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPH0390439U publication Critical patent/JPH0390439U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Description

【図面の簡単な説明】
第１図は本考案の平板デイスプレイ用薄膜トラ
ンジスタの平面図、第２図は従来の薄膜トランジ
スタの平面図、第３図は一般的な薄膜トランジス
タの構造を示す断面図である。 １……非品質シリコン層、２……ゲート電極、
５……画素電極、６……ソース電極、７……ドレ
イン電極、６１……第１ソース電極、６２……第
２ソース電極。

Claims (1)

    【実用新案登録請求の範囲】
  1. 非晶質シリコン層と、この非晶質シリコン層上
    に形成されているゲート電極と、ドレイン電極と
    、このドレイン電極に接続されている画素電極と
    、前記非晶質シリコン層上に形成されているとと
    もに前記ゲート電極と交差しているソース電極と
    を有する平板デイスプレイ用薄膜トランジスタに
    おいて、第１ソース電極と第２ソース電極とを有
    することを特徴とする平板デイスプレイ用薄膜ト
    ランジスタ。
JP1990089392U 1989-12-30 1990-08-27 Pending JPH0390439U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019890021037U KR920008675Y1 (ko) 1989-12-30 1989-12-30 평판 디스플레이용 박막 트랜지스터

Publications (1)

Publication Number Publication Date
JPH0390439U true JPH0390439U (ja) 1991-09-13

Family

ID=19294919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990089392U Pending JPH0390439U (ja) 1989-12-30 1990-08-27

Country Status (3)

Country Link
US (1) US5049952A (ja)
JP (1) JPH0390439U (ja)
KR (1) KR920008675Y1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010110602A (ja) * 2008-11-07 2010-05-20 Yoshihiko Ikeda 有孔指圧具

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247194A (en) * 1991-05-24 1993-09-21 Samsung Electronics Co., Ltd. Thin film transistor with an increased switching rate
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
KR0149311B1 (ko) * 1995-07-28 1998-10-15 김광호 화소 간 기생 용량 차이가 없는 액정 표시 장치용 기판
KR100495794B1 (ko) 1997-10-17 2005-09-28 삼성전자주식회사 액정표시장치용박막트랜지스터
KR100333980B1 (ko) * 1999-04-13 2002-04-24 윤종용 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
CN101847640B (zh) * 2009-03-27 2011-12-28 北京京东方光电科技有限公司 阵列基板及其制造方法和液晶面板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61249078A (ja) * 1985-04-27 1986-11-06 シャープ株式会社 マトリクス型表示装置
JPS61261774A (ja) * 1985-05-16 1986-11-19 旭硝子株式会社 薄膜能動素子基板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170261A (ja) * 1984-02-14 1985-09-03 Fujitsu Ltd 薄膜トランジスタの構成方法
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
JPH0740101B2 (ja) * 1985-04-23 1995-05-01 旭硝子株式会社 薄膜トランジスタ
US4803536A (en) * 1986-10-24 1989-02-07 Xerox Corporation Electrostatic discharge protection network for large area transducer arrays
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
JPS6482674A (en) * 1987-09-25 1989-03-28 Casio Computer Co Ltd Thin film transistor
JP2516030B2 (ja) * 1987-09-09 1996-07-10 セイコーエプソン株式会社 薄膜トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61249078A (ja) * 1985-04-27 1986-11-06 シャープ株式会社 マトリクス型表示装置
JPS61261774A (ja) * 1985-05-16 1986-11-19 旭硝子株式会社 薄膜能動素子基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010110602A (ja) * 2008-11-07 2010-05-20 Yoshihiko Ikeda 有孔指圧具

Also Published As

Publication number Publication date
KR920008675Y1 (ko) 1992-12-12
US5049952A (en) 1991-09-17
KR910013027U (ko) 1991-07-30

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