JPS6234449U - - Google Patents
Info
- Publication number
- JPS6234449U JPS6234449U JP12665785U JP12665785U JPS6234449U JP S6234449 U JPS6234449 U JP S6234449U JP 12665785 U JP12665785 U JP 12665785U JP 12665785 U JP12665785 U JP 12665785U JP S6234449 U JPS6234449 U JP S6234449U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate electrode
- layer structure
- utility
- registration request
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案のＴＦＴの断面図、第２図ａ及
びｂは従来のＴＦＴの平面図及び断面図である。 １……ドレイン電極、２……ソース電極、３，
３′……ゲート電極、４……アモルフアスシリコ
ン膜、５……絶縁膜、６……表示電極、７……ガ
ラス基板、３１，３３……クロム層、３２……金
層。
びｂは従来のＴＦＴの平面図及び断面図である。 １……ドレイン電極、２……ソース電極、３，
３′……ゲート電極、４……アモルフアスシリコ
ン膜、５……絶縁膜、６……表示電極、７……ガ
ラス基板、３１，３３……クロム層、３２……金
層。
Claims (1)
- ゲート電極、絶縁膜、半導体膜、ドレイン電極
並びにソース電極が順次積層された薄膜トランジ
スタに於いて、ゲート電極を３層構造とした事を
特徴とする薄膜トランジスタ。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12665785U JPS6234449U (ja) | 1985-08-20 | 1985-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12665785U JPS6234449U (ja) | 1985-08-20 | 1985-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6234449U true JPS6234449U (ja) | 1987-02-28 |
Family
ID=31020669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12665785U Pending JPS6234449U (ja) | 1985-08-20 | 1985-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6234449U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270711A (ja) * | 1997-03-25 | 1998-10-09 | Internatl Business Mach Corp <Ibm> | 薄膜トランジスタ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58173847A (ja) * | 1982-04-07 | 1983-10-12 | Matsushita Electric Ind Co Ltd | 素子作製方法 |
-
1985
- 1985-08-20 JP JP12665785U patent/JPS6234449U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58173847A (ja) * | 1982-04-07 | 1983-10-12 | Matsushita Electric Ind Co Ltd | 素子作製方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270711A (ja) * | 1997-03-25 | 1998-10-09 | Internatl Business Mach Corp <Ibm> | 薄膜トランジスタ |