JPH03787B2 - - Google Patents

Info

Publication number
JPH03787B2
JPH03787B2 JP57145471A JP14547182A JPH03787B2 JP H03787 B2 JPH03787 B2 JP H03787B2 JP 57145471 A JP57145471 A JP 57145471A JP 14547182 A JP14547182 A JP 14547182A JP H03787 B2 JPH03787 B2 JP H03787B2
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon
silicon oxide
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57145471A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5935445A (ja
Inventor
Kazuto Sakuma
Mutsunobu Arita
Nobuyoshi Awaya
Masaaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57145471A priority Critical patent/JPS5935445A/ja
Priority to US06/525,570 priority patent/US4660068A/en
Priority to DE8383304898T priority patent/DE3380104D1/de
Priority to EP83304898A priority patent/EP0104765B1/en
Priority to KR1019830003959A priority patent/KR880000975B1/ko
Publication of JPS5935445A publication Critical patent/JPS5935445A/ja
Publication of JPH03787B2 publication Critical patent/JPH03787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
JP57145471A 1982-08-24 1982-08-24 半導体装置の製造方法 Granted JPS5935445A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57145471A JPS5935445A (ja) 1982-08-24 1982-08-24 半導体装置の製造方法
US06/525,570 US4660068A (en) 1982-08-24 1983-08-22 Substrate structure of semiconductor device and method of manufacturing the same
DE8383304898T DE3380104D1 (en) 1982-08-24 1983-08-24 Substrate structure of semiconductor device and method of manufacturing the same
EP83304898A EP0104765B1 (en) 1982-08-24 1983-08-24 Substrate structure of semiconductor device and method of manufacturing the same
KR1019830003959A KR880000975B1 (ko) 1982-08-24 1983-08-24 반도체 장치의 기판구조 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57145471A JPS5935445A (ja) 1982-08-24 1982-08-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5935445A JPS5935445A (ja) 1984-02-27
JPH03787B2 true JPH03787B2 (cg-RX-API-DMAC7.html) 1991-01-08

Family

ID=15386007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57145471A Granted JPS5935445A (ja) 1982-08-24 1982-08-24 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US4660068A (cg-RX-API-DMAC7.html)
JP (1) JPS5935445A (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680726B2 (ja) * 1985-04-18 1994-10-12 ソニー株式会社 半導体装置の製造方法
US4910575A (en) * 1986-06-16 1990-03-20 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit and its manufacturing method
US4980311A (en) * 1987-05-05 1990-12-25 Seiko Epson Corporation Method of fabricating a semiconductor device
JPH01125858A (ja) * 1987-11-10 1989-05-18 Fujitsu Ltd 半導体装置およびその製造方法
US4825277A (en) * 1987-11-17 1989-04-25 Motorola Inc. Trench isolation process and structure
US4893163A (en) * 1988-03-28 1990-01-09 International Business Machines Corporation Alignment mark system for electron beam/optical mixed lithography
US5406113A (en) * 1991-01-09 1995-04-11 Fujitsu Limited Bipolar transistor having a buried collector layer
KR0156115B1 (ko) * 1994-06-16 1998-12-01 문정환 반도체 소자의 격리막 구조 및 형성방법
JP3360970B2 (ja) * 1995-05-22 2003-01-07 株式会社東芝 半導体装置の製造方法
US6090685A (en) * 1997-08-22 2000-07-18 Micron Technology Inc. Method of forming a LOCOS trench isolation structure
US6127215A (en) 1998-10-29 2000-10-03 International Business Machines Corp. Deep pivot mask for enhanced buried-channel PFET performance and reliability
US9685524B2 (en) * 2005-03-11 2017-06-20 Vishay-Siliconix Narrow semiconductor trench structure
KR100636680B1 (ko) * 2005-06-29 2006-10-23 주식회사 하이닉스반도체 리세스 게이트 및 비대칭 불순물영역을 갖는 반도체소자 및그 제조방법
TWI489557B (zh) 2005-12-22 2015-06-21 Vishay Siliconix 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體
US8409954B2 (en) 2006-03-21 2013-04-02 Vishay-Silconix Ultra-low drain-source resistance power MOSFET
US9412883B2 (en) 2011-11-22 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for MOS capacitors in replacement gate process
CN103579074B (zh) * 2012-07-20 2016-07-06 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345675B2 (cg-RX-API-DMAC7.html) * 1971-10-12 1978-12-08
JPS5350636A (en) * 1976-10-20 1978-05-09 Hitachi Ltd Service processor
JPS55157044A (en) * 1979-05-28 1980-12-06 Toshiba Corp Information processor
US4274909A (en) * 1980-03-17 1981-06-23 International Business Machines Corporation Method for forming ultra fine deep dielectric isolation
EP0048175B1 (en) * 1980-09-17 1986-04-23 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
US4331708A (en) * 1980-11-04 1982-05-25 Texas Instruments Incorporated Method of fabricating narrow deep grooves in silicon
US4502913A (en) * 1982-06-30 1985-03-05 International Business Machines Corporation Total dielectric isolation for integrated circuits
JPS5961045A (ja) * 1982-09-29 1984-04-07 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
US4660068A (en) 1987-04-21
JPS5935445A (ja) 1984-02-27

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