JPH0377673B2 - - Google Patents

Info

Publication number
JPH0377673B2
JPH0377673B2 JP60029211A JP2921185A JPH0377673B2 JP H0377673 B2 JPH0377673 B2 JP H0377673B2 JP 60029211 A JP60029211 A JP 60029211A JP 2921185 A JP2921185 A JP 2921185A JP H0377673 B2 JPH0377673 B2 JP H0377673B2
Authority
JP
Japan
Prior art keywords
solar cell
cavity
plasma
cover
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60029211A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60186072A (ja
Inventor
Samyueru Garefu Harorudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optical Coating Laboratory Inc
Original Assignee
Optical Coating Laboratory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optical Coating Laboratory Inc filed Critical Optical Coating Laboratory Inc
Publication of JPS60186072A publication Critical patent/JPS60186072A/ja
Publication of JPH0377673B2 publication Critical patent/JPH0377673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Nozzles (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP60029211A 1979-04-26 1985-02-16 太陽電池パネル Granted JPS60186072A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26598 1979-04-26
US06/026,598 US4268711A (en) 1979-04-26 1979-04-26 Method and apparatus for forming films from vapors using a contained plasma source

Publications (2)

Publication Number Publication Date
JPS60186072A JPS60186072A (ja) 1985-09-21
JPH0377673B2 true JPH0377673B2 (enrdf_load_stackoverflow) 1991-12-11

Family

ID=21832733

Family Applications (2)

Application Number Title Priority Date Filing Date
JP55055286A Expired JPS6029541B2 (ja) 1979-04-26 1980-04-25 閉じ込めプラズマ源を用いて蒸気から膜を生成させる方法および装置
JP60029211A Granted JPS60186072A (ja) 1979-04-26 1985-02-16 太陽電池パネル

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP55055286A Expired JPS6029541B2 (ja) 1979-04-26 1980-04-25 閉じ込めプラズマ源を用いて蒸気から膜を生成させる方法および装置

Country Status (8)

Country Link
US (1) US4268711A (enrdf_load_stackoverflow)
JP (2) JPS6029541B2 (enrdf_load_stackoverflow)
CA (1) CA1146909A (enrdf_load_stackoverflow)
CH (2) CH648977A5 (enrdf_load_stackoverflow)
DE (1) DE3016022C2 (enrdf_load_stackoverflow)
FR (1) FR2455364B1 (enrdf_load_stackoverflow)
GB (2) GB2100514B (enrdf_load_stackoverflow)
SG (1) SG4984G (enrdf_load_stackoverflow)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
US4487162A (en) * 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
US4471003A (en) * 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4609424A (en) * 1981-05-22 1986-09-02 United Technologies Corporation Plasma enhanced deposition of semiconductors
US4421592A (en) * 1981-05-22 1983-12-20 United Technologies Corporation Plasma enhanced deposition of semiconductors
JPS5833829A (ja) * 1981-08-24 1983-02-28 Toshiba Corp 薄膜形成装置
US4438183A (en) 1982-08-25 1984-03-20 The United States Of America As Represented By The United States Department Of Energy Photoelectrochemical cell having photoanode with thin boron phosphide coating as a corrosion resistant layer
JPS5969142A (ja) * 1982-10-13 1984-04-19 Toshiba Corp 膜形成方法及び膜形成装置
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
FR2555360B1 (fr) * 1983-11-17 1986-10-10 Berenguer Marc Dispositif pour la realisation de couches dielectriques minces a la surface de corps solides
DE3577730D1 (de) * 1984-03-03 1990-06-21 Stc Plc Beschichtungsverfahren.
GB8414878D0 (en) * 1984-06-11 1984-07-18 Gen Electric Co Plc Integrated optical waveguides
JPH0764534B2 (ja) * 1984-08-16 1995-07-12 ゴ−ドン・エル・キヤン 材料の分離および析出の電磁流体力学的装置および方法
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置
US4804640A (en) * 1985-08-27 1989-02-14 General Electric Company Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
GB8713986D0 (en) * 1987-06-16 1987-07-22 Shell Int Research Apparatus for plasma surface treating
ZA884511B (en) * 1987-07-15 1989-03-29 Boc Group Inc Method of plasma enhanced silicon oxide deposition
KR910007382B1 (ko) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 초전도 재료 및 초전도 박막의 제조방법
US5004721A (en) * 1988-11-03 1991-04-02 Board Of Regents, The University Of Texas System As-deposited oxide superconductor films on silicon and aluminum oxide
US5314845A (en) * 1989-09-28 1994-05-24 Applied Materials, Inc. Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
US5166101A (en) * 1989-09-28 1992-11-24 Applied Materials, Inc. Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer
US5798261A (en) * 1989-10-31 1998-08-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Distributed pore chemistry in porous organic polymers
US5141806A (en) * 1989-10-31 1992-08-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Microporous structure with layered interstitial surface treatment, and method and apparatus for preparation thereof
US5262358A (en) * 1989-11-13 1993-11-16 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for producing a silicate layer in an integrated circuit
DE3937723A1 (de) * 1989-11-13 1991-05-16 Fraunhofer Ges Forschung Verfahren und vorrichtung zum herstellen einer silikatschicht in einer integrierten schaltung
US5120680A (en) * 1990-07-19 1992-06-09 At&T Bell Laboratories Method for depositing dielectric layers
JPH07118522B2 (ja) * 1990-10-24 1995-12-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 基板表面を酸化処理するための方法及び半導体の構造
US5510088A (en) * 1992-06-11 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature plasma film deposition using dielectric chamber as source material
GB2268327A (en) * 1992-06-30 1994-01-05 Texas Instruments Ltd Passivated gallium arsenide device
US6041735A (en) * 1998-03-02 2000-03-28 Ball Semiconductor, Inc. Inductively coupled plasma powder vaporization for fabricating integrated circuits
JP2000017457A (ja) * 1998-07-03 2000-01-18 Shincron:Kk 薄膜形成装置および薄膜形成方法
KR100277833B1 (ko) * 1998-10-09 2001-01-15 정선종 라디오파 유도 플라즈마 소스 발생장치
RU2144718C1 (ru) * 1999-06-24 2000-01-20 Государственный научный центр РФ Институт медико-биологических проблем Полупроводниковый фотопреобразователь солнечной энергии для космических аппаратов
US6426280B2 (en) 2000-01-26 2002-07-30 Ball Semiconductor, Inc. Method for doping spherical semiconductors
US7659475B2 (en) * 2003-06-20 2010-02-09 Imec Method for backside surface passivation of solar cells and solar cells with such passivation
US7708730B2 (en) * 2006-01-30 2010-05-04 Palyon Medical (Bvi) Limited Template system for multi-reservoir implantable pump
DE102010040110A1 (de) * 2010-09-01 2012-03-01 Robert Bosch Gmbh Solarzelle und Verfahren zur Herstellung einer solchen
US11476641B1 (en) 2019-06-25 2022-10-18 Mac Thin Films, Inc. Window for laser protection

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
GB1136218A (en) * 1965-12-14 1968-12-11 Standard Telephones Cables Ltd Improvements in or relating to the manufacture of semiconductor optical devices
GB1106510A (en) * 1966-10-17 1968-03-20 Standard Telephones Cables Ltd A method of depositing silicon nitride
GB1181030A (en) * 1967-07-24 1970-02-11 Hughes Aircraft Co Dielectric Coating by RF Sputtering
US3904505A (en) * 1970-03-20 1975-09-09 Space Sciences Inc Apparatus for film deposition
BE766345A (fr) * 1971-04-27 1971-09-16 Universitaire De L Etat A Mons Dispositif pour fabriquer des couches minces de substances minerales.
GB1550853A (en) * 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
DE2639841C3 (de) * 1976-09-03 1980-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Solarzelle und Verfahren zu ihrer Herstellung
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
JPS5384584A (en) * 1976-12-29 1978-07-26 Seiko Epson Corp Solar cell
US4082569A (en) * 1977-02-22 1978-04-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cell collector

Also Published As

Publication number Publication date
US4268711A (en) 1981-05-19
GB2048230A (en) 1980-12-10
DE3016022C2 (de) 1984-06-28
FR2455364A1 (enrdf_load_stackoverflow) 1980-11-21
JPS55145561A (en) 1980-11-13
JPS60186072A (ja) 1985-09-21
CH648714A5 (fr) 1985-03-29
GB2100514A (en) 1982-12-22
CA1146909A (en) 1983-05-24
DE3016022A1 (de) 1981-03-26
GB2100514B (en) 1983-12-21
GB2048230B (en) 1983-09-14
FR2455364B1 (enrdf_load_stackoverflow) 1985-01-11
JPS6029541B2 (ja) 1985-07-11
SG4984G (en) 1985-03-08
CH648977A5 (fr) 1985-04-15

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