GB1136218A - Improvements in or relating to the manufacture of semiconductor optical devices - Google Patents

Improvements in or relating to the manufacture of semiconductor optical devices

Info

Publication number
GB1136218A
GB1136218A GB52993/65A GB5299365A GB1136218A GB 1136218 A GB1136218 A GB 1136218A GB 52993/65 A GB52993/65 A GB 52993/65A GB 5299365 A GB5299365 A GB 5299365A GB 1136218 A GB1136218 A GB 1136218A
Authority
GB
United Kingdom
Prior art keywords
layer
inorganic compound
light emitting
gallium arsenide
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52993/65A
Inventor
Henley Frank Sterling
Christ Opher David Dobson
Richard Charles George Swann
Peter Richard Selway
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB19219/64A priority Critical patent/GB1104935A/en
Priority to US452487A priority patent/US3485666A/en
Priority to SE5871/65A priority patent/SE322391B/xx
Priority to FR16070A priority patent/FR1442502A/en
Priority to BE663511D priority patent/BE663511A/xx
Priority to DE19651521553 priority patent/DE1521553B2/en
Priority to NL6505915A priority patent/NL6505915A/xx
Priority to GB46289/65A priority patent/GB1149052A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB52993/65A priority patent/GB1136218A/en
Priority to FR82178A priority patent/FR91083E/en
Priority to DE1966D0051706 priority patent/DE1521216A1/en
Priority to NL6617540A priority patent/NL6617540A/xx
Priority to BE691101D priority patent/BE691101A/xx
Priority to FR87413A priority patent/FR91559E/en
Publication of GB1136218A publication Critical patent/GB1136218A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Abstract

1,136,218. Coatings of inorganic compounds or elements. STANDARD TELEPHONES & CABLES Ltd. 14 Dec., 1965, No. 52993/65. Heading C1A. [Also in Divisions C4, C7 and H1] In a method of providing an anti-reflecting coating on an optical surface of a semi-conductor optical device, the surface is coated with a layer comprising an element or an inorganic compound, the energy necessary to promote the required chemical action for the formation of the layer being provided by establishing a plasma adjacent to the surface in an atmosphere which when the layer comprises an element contains the said element as a compound and which when the layer comprises an inorganic compound contains all the elements of said inorganic compound, all the inorganic compound elements being present in the atmosphere as inorganic materials other than said inorganic compound with at least one of these inorganic materials being an inorganic compound. The optical device may be a light emitting device such as a gallium arsenide light emitting diode or a light receiving device such as a photodiode or photo-cell. The term light includes the visible, ultra-violet and infra-red regions of the spectrum. Fig. 1 shows apparatus for providing silicon nitride anti-reflecting coatings on gallium arsenide light emitting diodes 8 on a support 7 in a glass tube 1. A vacuum pump connected to an outlet 3 reduces the system pressure to OÀ2 torr and SiH 4 and NH 3 are supplied through an inlet 2. An R.F. power source with an output frequency of 4 mc./sec. is connected to a metal mesh which surrounds the tube 1 to produce a plasma. Other coatings (c) which may be provided and the starting materials (m) forming the gaseous atmosphere are The coating may comprise a single layer, a multiple layer or a graded layer, e.g. of silica merging into titanium oxide, e.g. produced by progressively changing the constituents of the gaseous atmosphere. Fig. 3 shows an anti-reflecting silicon nitride layer 18 on a gallium arsenide light emitting diode element comprising a body 14 of N-type gallium arsenide having a P-type region 16, a silica layer 15 and an indium electrode 17, the whole being sandwiched between copper plates 9a, 9b.
GB52993/65A 1964-05-08 1965-12-14 Improvements in or relating to the manufacture of semiconductor optical devices Expired GB1136218A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
GB19219/64A GB1104935A (en) 1964-05-08 1964-05-08 Improvements in or relating to a method of forming a layer of an inorganic compound
US452487A US3485666A (en) 1964-05-08 1965-05-03 Method of forming a silicon nitride coating
SE5871/65A SE322391B (en) 1964-05-08 1965-05-05
FR16070A FR1442502A (en) 1964-05-08 1965-05-06 Improvements in diaper formation methods
BE663511D BE663511A (en) 1964-05-08 1965-05-06
DE19651521553 DE1521553B2 (en) 1964-05-08 1965-05-06 METHOD OF DEPOSITING LAYERS
NL6505915A NL6505915A (en) 1964-05-08 1965-05-10
GB46289/65A GB1149052A (en) 1964-05-08 1965-11-02 Method of altering the surface properties of polymer material
GB52993/65A GB1136218A (en) 1965-12-14 1965-12-14 Improvements in or relating to the manufacture of semiconductor optical devices
FR82178A FR91083E (en) 1964-05-08 1966-11-02 Improvements in diaper formation methods
DE1966D0051706 DE1521216A1 (en) 1964-05-08 1966-12-03 Method for depositing an anti-reflective coating on optical components
NL6617540A NL6617540A (en) 1964-05-08 1966-12-13
BE691101D BE691101A (en) 1964-05-08 1966-12-13
FR87413A FR91559E (en) 1964-05-08 1966-12-14 Improvements in diaper formation methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52993/65A GB1136218A (en) 1965-12-14 1965-12-14 Improvements in or relating to the manufacture of semiconductor optical devices

Publications (1)

Publication Number Publication Date
GB1136218A true GB1136218A (en) 1968-12-11

Family

ID=10466194

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52993/65A Expired GB1136218A (en) 1964-05-08 1965-12-14 Improvements in or relating to the manufacture of semiconductor optical devices

Country Status (1)

Country Link
GB (1) GB1136218A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251571A1 (en) * 1971-10-27 1973-05-03 Texas Instruments Inc METHOD AND DEVICE FOR APPLYING COATINGS TO SUBSTRATES
FR2365813A1 (en) * 1976-09-27 1978-04-21 American Optical Corp PROCESS FOR PREPARING A PERFECTED ANTI-REFLECTIVE COATING OF A SYNTHETIC POLYMER LENS
DE3016022A1 (en) * 1979-04-26 1981-03-26 Optical Coating Laboratory Inc., Santa Rosa, Calif. METHOD AND DEVICE FOR PRODUCING A THIN, FILM-LIKE COATING BY EVAPORATION USING A ENCLOSED PLASMA SOURCE
EP0127231A1 (en) * 1983-05-24 1984-12-05 Koninklijke Philips Electronics N.V. Optical element comprising a transparent substrate and an anti-reflection coating for the near-infrared region of wavelengths
GB2145742A (en) * 1983-08-27 1985-04-03 Philips Nv Method of manufacturing a reaction vessel for crystal growth purposes
GB2199848A (en) * 1986-12-24 1988-07-20 Pilkington Plc Inorganic coatings on glass
EP0301470A2 (en) * 1987-07-30 1989-02-01 Nukem GmbH Encapsulation of a photovoltaic element
EP0430041A1 (en) * 1989-11-22 1991-06-05 Daido Tokushuko Kabushiki Kaisha Light-emitting diode having light reflecting layer
GB2247691A (en) * 1990-08-31 1992-03-11 Glaverbel Coating glass involving coating with an incompletely oxidized undercoat
EP0585055A1 (en) * 1992-08-21 1994-03-02 Santa Barbara Research Center Wideband anti-reflection coating for indium antimonide photodetector device
WO2004100278A2 (en) 2003-04-30 2004-11-18 Cree, Inc. Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
EP3428975A1 (en) 2017-07-14 2019-01-16 AGC Glass Europe Light-emitting devices having an antireflective silicon carbide or sapphire substrate and methods of forming the same

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251571A1 (en) * 1971-10-27 1973-05-03 Texas Instruments Inc METHOD AND DEVICE FOR APPLYING COATINGS TO SUBSTRATES
FR2365813A1 (en) * 1976-09-27 1978-04-21 American Optical Corp PROCESS FOR PREPARING A PERFECTED ANTI-REFLECTIVE COATING OF A SYNTHETIC POLYMER LENS
DE3016022A1 (en) * 1979-04-26 1981-03-26 Optical Coating Laboratory Inc., Santa Rosa, Calif. METHOD AND DEVICE FOR PRODUCING A THIN, FILM-LIKE COATING BY EVAPORATION USING A ENCLOSED PLASMA SOURCE
EP0127231A1 (en) * 1983-05-24 1984-12-05 Koninklijke Philips Electronics N.V. Optical element comprising a transparent substrate and an anti-reflection coating for the near-infrared region of wavelengths
GB2145742A (en) * 1983-08-27 1985-04-03 Philips Nv Method of manufacturing a reaction vessel for crystal growth purposes
GB2199848A (en) * 1986-12-24 1988-07-20 Pilkington Plc Inorganic coatings on glass
US4828880A (en) * 1986-12-24 1989-05-09 Pilkington Plc Coatings on glass
GB2199848B (en) * 1986-12-24 1991-05-15 Pilkington Plc Coatings on glass
EP0301470A2 (en) * 1987-07-30 1989-02-01 Nukem GmbH Encapsulation of a photovoltaic element
EP0301470A3 (en) * 1987-07-30 1990-03-21 Nukem Gmbh Encapsulation of a photovoltaic element
EP0430041A1 (en) * 1989-11-22 1991-06-05 Daido Tokushuko Kabushiki Kaisha Light-emitting diode having light reflecting layer
US5132750A (en) * 1989-11-22 1992-07-21 Daido Tokushuko Kabushiki Kaisha Light-emitting diode having light reflecting layer
GB2247691A (en) * 1990-08-31 1992-03-11 Glaverbel Coating glass involving coating with an incompletely oxidized undercoat
US5203903A (en) * 1990-08-31 1993-04-20 Glaverbel Method of coating glass
GB2247691B (en) * 1990-08-31 1994-11-23 Glaverbel Method of coating glass
EP0585055A1 (en) * 1992-08-21 1994-03-02 Santa Barbara Research Center Wideband anti-reflection coating for indium antimonide photodetector device
WO2004100278A2 (en) 2003-04-30 2004-11-18 Cree, Inc. Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
WO2004100278A3 (en) * 2003-04-30 2005-03-17 Cree Inc Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
US7087936B2 (en) 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
EP3428975A1 (en) 2017-07-14 2019-01-16 AGC Glass Europe Light-emitting devices having an antireflective silicon carbide or sapphire substrate and methods of forming the same
WO2019012065A1 (en) 2017-07-14 2019-01-17 Agc Glass Europe Light-emitting devices having an anti reflective silicon carbide or sapphire substrate and methods of forming the same

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