JPS6450556A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6450556A
JPS6450556A JP62207662A JP20766287A JPS6450556A JP S6450556 A JPS6450556 A JP S6450556A JP 62207662 A JP62207662 A JP 62207662A JP 20766287 A JP20766287 A JP 20766287A JP S6450556 A JPS6450556 A JP S6450556A
Authority
JP
Japan
Prior art keywords
film
photo detector
deposited
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62207662A
Other languages
Japanese (ja)
Inventor
Akinori Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62207662A priority Critical patent/JPS6450556A/en
Publication of JPS6450556A publication Critical patent/JPS6450556A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to fully exhibit the characteristics of a photo detector while assuring the reliability of a semiconductor integrated circuit including the photo detector by disposing an oxysilicon nitride film on the film mainly composed of silicon dioxide which is deposited as an insulating film at least on the photo detector. CONSTITUTION:In a semiconductor integrated circuit device wherein part of many semiconductor elements fabricated on a same substrate 1 is a photo detector 2, an oxysilicon nitride film 7 is disposed on a film 5 mainly composed of silicon dioxide which was deposited as an insulating film on at least the photo detector 2. For instance, in the surface of an N-type silicon substrate 1, a PN-junction photo diode 2, an MOS transistor 3 and a capacitor 4 are made. Then, an insulating film 5 mainly composed of silicon dioxide is deposited, and an aluminium wiring 6 is provided. Thereafter, an oxysilicon nitride film 7 is provided, and a light screening film B is provided. Said oxysilicon nitride film 7 is preferably deposited by a plasma CVD method.
JP62207662A 1987-08-21 1987-08-21 Semiconductor integrated circuit device Pending JPS6450556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62207662A JPS6450556A (en) 1987-08-21 1987-08-21 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62207662A JPS6450556A (en) 1987-08-21 1987-08-21 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6450556A true JPS6450556A (en) 1989-02-27

Family

ID=16543479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62207662A Pending JPS6450556A (en) 1987-08-21 1987-08-21 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6450556A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03200371A (en) * 1989-12-27 1991-09-02 Sanyo Electric Co Ltd Solid-state image sensing element
JPH04249380A (en) * 1991-02-05 1992-09-04 Sharp Corp Photodetector with built-in circuit
WO2003054973A1 (en) * 2001-12-21 2003-07-03 Sharp Kabushiki Kaisha Light receiving element and light receiving device incorporating circuit and optical disc drive
JP2007170035A (en) * 2005-12-22 2007-07-05 Okumura Corp Breaking device for concrete structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03200371A (en) * 1989-12-27 1991-09-02 Sanyo Electric Co Ltd Solid-state image sensing element
JPH04249380A (en) * 1991-02-05 1992-09-04 Sharp Corp Photodetector with built-in circuit
WO2003054973A1 (en) * 2001-12-21 2003-07-03 Sharp Kabushiki Kaisha Light receiving element and light receiving device incorporating circuit and optical disc drive
CN100343997C (en) * 2001-12-21 2007-10-17 夏普株式会社 Light receiving device and light receiving element incorporating circuit and optical disc drive
JP2007170035A (en) * 2005-12-22 2007-07-05 Okumura Corp Breaking device for concrete structure

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