JPS6450556A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6450556A JPS6450556A JP62207662A JP20766287A JPS6450556A JP S6450556 A JPS6450556 A JP S6450556A JP 62207662 A JP62207662 A JP 62207662A JP 20766287 A JP20766287 A JP 20766287A JP S6450556 A JPS6450556 A JP S6450556A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photo detector
- deposited
- integrated circuit
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to fully exhibit the characteristics of a photo detector while assuring the reliability of a semiconductor integrated circuit including the photo detector by disposing an oxysilicon nitride film on the film mainly composed of silicon dioxide which is deposited as an insulating film at least on the photo detector. CONSTITUTION:In a semiconductor integrated circuit device wherein part of many semiconductor elements fabricated on a same substrate 1 is a photo detector 2, an oxysilicon nitride film 7 is disposed on a film 5 mainly composed of silicon dioxide which was deposited as an insulating film on at least the photo detector 2. For instance, in the surface of an N-type silicon substrate 1, a PN-junction photo diode 2, an MOS transistor 3 and a capacitor 4 are made. Then, an insulating film 5 mainly composed of silicon dioxide is deposited, and an aluminium wiring 6 is provided. Thereafter, an oxysilicon nitride film 7 is provided, and a light screening film B is provided. Said oxysilicon nitride film 7 is preferably deposited by a plasma CVD method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62207662A JPS6450556A (en) | 1987-08-21 | 1987-08-21 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62207662A JPS6450556A (en) | 1987-08-21 | 1987-08-21 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450556A true JPS6450556A (en) | 1989-02-27 |
Family
ID=16543479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62207662A Pending JPS6450556A (en) | 1987-08-21 | 1987-08-21 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450556A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03200371A (en) * | 1989-12-27 | 1991-09-02 | Sanyo Electric Co Ltd | Solid-state image sensing element |
JPH04249380A (en) * | 1991-02-05 | 1992-09-04 | Sharp Corp | Photodetector with built-in circuit |
WO2003054973A1 (en) * | 2001-12-21 | 2003-07-03 | Sharp Kabushiki Kaisha | Light receiving element and light receiving device incorporating circuit and optical disc drive |
JP2007170035A (en) * | 2005-12-22 | 2007-07-05 | Okumura Corp | Breaking device for concrete structure |
-
1987
- 1987-08-21 JP JP62207662A patent/JPS6450556A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03200371A (en) * | 1989-12-27 | 1991-09-02 | Sanyo Electric Co Ltd | Solid-state image sensing element |
JPH04249380A (en) * | 1991-02-05 | 1992-09-04 | Sharp Corp | Photodetector with built-in circuit |
WO2003054973A1 (en) * | 2001-12-21 | 2003-07-03 | Sharp Kabushiki Kaisha | Light receiving element and light receiving device incorporating circuit and optical disc drive |
CN100343997C (en) * | 2001-12-21 | 2007-10-17 | 夏普株式会社 | Light receiving device and light receiving element incorporating circuit and optical disc drive |
JP2007170035A (en) * | 2005-12-22 | 2007-07-05 | Okumura Corp | Breaking device for concrete structure |
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