JPH0377658B2 - - Google Patents

Info

Publication number
JPH0377658B2
JPH0377658B2 JP57169535A JP16953582A JPH0377658B2 JP H0377658 B2 JPH0377658 B2 JP H0377658B2 JP 57169535 A JP57169535 A JP 57169535A JP 16953582 A JP16953582 A JP 16953582A JP H0377658 B2 JPH0377658 B2 JP H0377658B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
melting point
silicon layer
silicide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57169535A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5961033A (ja
Inventor
Yoshimi Shiotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57169535A priority Critical patent/JPS5961033A/ja
Publication of JPS5961033A publication Critical patent/JPS5961033A/ja
Publication of JPH0377658B2 publication Critical patent/JPH0377658B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP57169535A 1982-09-30 1982-09-30 高融点金属シリサイド層の形成方法 Granted JPS5961033A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57169535A JPS5961033A (ja) 1982-09-30 1982-09-30 高融点金属シリサイド層の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57169535A JPS5961033A (ja) 1982-09-30 1982-09-30 高融点金属シリサイド層の形成方法

Publications (2)

Publication Number Publication Date
JPS5961033A JPS5961033A (ja) 1984-04-07
JPH0377658B2 true JPH0377658B2 (enExample) 1991-12-11

Family

ID=15888290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57169535A Granted JPS5961033A (ja) 1982-09-30 1982-09-30 高融点金属シリサイド層の形成方法

Country Status (1)

Country Link
JP (1) JPS5961033A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6486560A (en) * 1987-09-29 1989-03-31 Nippon Telegraph & Telephone Manufacture of semiconductor device
JPH0680638B2 (ja) * 1990-07-05 1994-10-12 株式会社東芝 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5961033A (ja) 1984-04-07

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