JPS6486560A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6486560A
JPS6486560A JP24244787A JP24244787A JPS6486560A JP S6486560 A JPS6486560 A JP S6486560A JP 24244787 A JP24244787 A JP 24244787A JP 24244787 A JP24244787 A JP 24244787A JP S6486560 A JPS6486560 A JP S6486560A
Authority
JP
Japan
Prior art keywords
semiconductor
gate electrode
semiconductor layer
film
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24244787A
Other languages
Japanese (ja)
Inventor
Yasuhisa Omura
Katsutoshi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP24244787A priority Critical patent/JPS6486560A/en
Publication of JPS6486560A publication Critical patent/JPS6486560A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To produce a semiconductor device with improved characteristics and stability at an increased yield by employing a gate electrode or source-drain region alloyed partially with a metal. CONSTITUTION:A semiconductor layer is used for a gate electrode. Metal ions are implanted in the semiconductor layer or in the regions for a source terminal and a drain terminal. An insulating film 2 for laterally isolating semiconductor devices and a gate insulating film 3 are formed on a semiconductor substrate 1. A semiconductor film 18 is formed on the gate insulating film 3. The semiconductor layer 18 for the gate electrode is then doped with metal ions 17. This substrate is heat-treated to create an alloy in a semiconductor layer 18'', and consequently a double-layer structure is composed of an alloy film 18b and a semiconductor film 18a. The gate electrode 18 may be doped with Ti, W, Hf, or Mo ions after it is shaped in a desired size.
JP24244787A 1987-09-29 1987-09-29 Manufacture of semiconductor device Pending JPS6486560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24244787A JPS6486560A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24244787A JPS6486560A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6486560A true JPS6486560A (en) 1989-03-31

Family

ID=17089229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24244787A Pending JPS6486560A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6486560A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961033A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Formation of a high melting point metal silicide layer
JPS6037169A (en) * 1983-08-09 1985-02-26 Sanyo Electric Co Ltd Manufacture of mosfet
JPS61265868A (en) * 1985-05-21 1986-11-25 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961033A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Formation of a high melting point metal silicide layer
JPS6037169A (en) * 1983-08-09 1985-02-26 Sanyo Electric Co Ltd Manufacture of mosfet
JPS61265868A (en) * 1985-05-21 1986-11-25 Hitachi Ltd Manufacture of semiconductor device

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