JPS6486560A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6486560A JPS6486560A JP24244787A JP24244787A JPS6486560A JP S6486560 A JPS6486560 A JP S6486560A JP 24244787 A JP24244787 A JP 24244787A JP 24244787 A JP24244787 A JP 24244787A JP S6486560 A JPS6486560 A JP S6486560A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- gate electrode
- semiconductor layer
- film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To produce a semiconductor device with improved characteristics and stability at an increased yield by employing a gate electrode or source-drain region alloyed partially with a metal. CONSTITUTION:A semiconductor layer is used for a gate electrode. Metal ions are implanted in the semiconductor layer or in the regions for a source terminal and a drain terminal. An insulating film 2 for laterally isolating semiconductor devices and a gate insulating film 3 are formed on a semiconductor substrate 1. A semiconductor film 18 is formed on the gate insulating film 3. The semiconductor layer 18 for the gate electrode is then doped with metal ions 17. This substrate is heat-treated to create an alloy in a semiconductor layer 18'', and consequently a double-layer structure is composed of an alloy film 18b and a semiconductor film 18a. The gate electrode 18 may be doped with Ti, W, Hf, or Mo ions after it is shaped in a desired size.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24244787A JPS6486560A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24244787A JPS6486560A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6486560A true JPS6486560A (en) | 1989-03-31 |
Family
ID=17089229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24244787A Pending JPS6486560A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6486560A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961033A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Formation of a high melting point metal silicide layer |
JPS6037169A (en) * | 1983-08-09 | 1985-02-26 | Sanyo Electric Co Ltd | Manufacture of mosfet |
JPS61265868A (en) * | 1985-05-21 | 1986-11-25 | Hitachi Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-29 JP JP24244787A patent/JPS6486560A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961033A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Formation of a high melting point metal silicide layer |
JPS6037169A (en) * | 1983-08-09 | 1985-02-26 | Sanyo Electric Co Ltd | Manufacture of mosfet |
JPS61265868A (en) * | 1985-05-21 | 1986-11-25 | Hitachi Ltd | Manufacture of semiconductor device |
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