JPH0376787B2 - - Google Patents
Info
- Publication number
- JPH0376787B2 JPH0376787B2 JP62249113A JP24911387A JPH0376787B2 JP H0376787 B2 JPH0376787 B2 JP H0376787B2 JP 62249113 A JP62249113 A JP 62249113A JP 24911387 A JP24911387 A JP 24911387A JP H0376787 B2 JPH0376787 B2 JP H0376787B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- quantum well
- gallium arsenide
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 40
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 21
- 229910052790 beryllium Inorganic materials 0.000 claims description 6
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000002784 hot electron Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
- H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62249113A JPH0193166A (ja) | 1987-10-03 | 1987-10-03 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62249113A JPH0193166A (ja) | 1987-10-03 | 1987-10-03 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0193166A JPH0193166A (ja) | 1989-04-12 |
| JPH0376787B2 true JPH0376787B2 (enrdf_load_stackoverflow) | 1991-12-06 |
Family
ID=17188146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62249113A Granted JPH0193166A (ja) | 1987-10-03 | 1987-10-03 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0193166A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2731089B2 (ja) * | 1991-10-02 | 1998-03-25 | 三菱電機株式会社 | 高速動作半導体装置およびその製造方法 |
| US5278427A (en) * | 1993-02-04 | 1994-01-11 | The United States Of America As Represented By The Secretary Of The Army | Quantum collector hot-electron transistor |
-
1987
- 1987-10-03 JP JP62249113A patent/JPH0193166A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0193166A (ja) | 1989-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |