JPH0374508B2 - - Google Patents

Info

Publication number
JPH0374508B2
JPH0374508B2 JP61062981A JP6298186A JPH0374508B2 JP H0374508 B2 JPH0374508 B2 JP H0374508B2 JP 61062981 A JP61062981 A JP 61062981A JP 6298186 A JP6298186 A JP 6298186A JP H0374508 B2 JPH0374508 B2 JP H0374508B2
Authority
JP
Japan
Prior art keywords
forming
contact pad
post
substrate
dimensional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61062981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62219954A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP61062981A priority Critical patent/JPS62219954A/ja
Priority to KR1019870002514A priority patent/KR900008647B1/ko
Priority to EP87104091A priority patent/EP0238089B1/en
Priority to DE8787104091T priority patent/DE3778944D1/de
Publication of JPS62219954A publication Critical patent/JPS62219954A/ja
Priority to US07/325,122 priority patent/US4939568A/en
Publication of JPH0374508B2 publication Critical patent/JPH0374508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06524—Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06596—Structural arrangements for testing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP61062981A 1986-03-20 1986-03-20 三次元ｉｃの製造方法 Granted JPS62219954A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61062981A JPS62219954A (ja) 1986-03-20 1986-03-20 三次元ｉｃの製造方法
KR1019870002514A KR900008647B1 (ko) 1986-03-20 1987-03-19 3차원 집적회로와 그의 제조방법
EP87104091A EP0238089B1 (en) 1986-03-20 1987-03-20 Three-dimensional integrated circuit and manufacturing method therefor
DE8787104091T DE3778944D1 (de) 1986-03-20 1987-03-20 Dreidimensionale integrierte schaltung und deren herstellungsverfahren.
US07/325,122 US4939568A (en) 1986-03-20 1989-03-17 Three-dimensional integrated circuit and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61062981A JPS62219954A (ja) 1986-03-20 1986-03-20 三次元ｉｃの製造方法

Publications (2)

Publication Number Publication Date
JPS62219954A JPS62219954A (ja) 1987-09-28
JPH0374508B2 true JPH0374508B2 (enrdf_load_stackoverflow) 1991-11-27

Family

ID=13216045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61062981A Granted JPS62219954A (ja) 1986-03-20 1986-03-20 三次元ｉｃの製造方法

Country Status (1)

Country Link
JP (1) JPS62219954A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817177B2 (ja) * 1987-11-16 1996-02-21 日産自動車株式会社 半導体装置
JPH01189141A (ja) * 1988-01-25 1989-07-28 Nec Corp 半導体装置
EP2270846A3 (en) 1996-10-29 2011-12-21 ALLVIA, Inc. Integrated circuits and methods for their fabrication
US6882030B2 (en) 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
JP4126747B2 (ja) * 1998-02-27 2008-07-30 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP2005504445A (ja) * 2001-10-01 2005-02-10 エグシル テクノロジー リミテッド 基板、特に半導体ウェハの加工
JP4190211B2 (ja) * 2002-06-05 2008-12-03 株式会社東京精密 基板加工方法および基板加工装置
JP3690407B2 (ja) 2003-07-31 2005-08-31 セイコーエプソン株式会社 半導体装置の製造方法
JP5072210B2 (ja) * 2004-10-05 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20080200011A1 (en) * 2006-10-06 2008-08-21 Pillalamarri Sunil K High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach
SG156550A1 (en) * 2008-05-06 2009-11-26 Gautham Viswanadam Wafer level integration module with interconnects
FR3082663B1 (fr) * 2018-06-14 2022-01-07 Aledia Dispositif optoelectronique

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607149A (ja) * 1983-06-24 1985-01-14 Nec Corp 半導体装置の製造方法
JPS6098654A (ja) * 1983-11-02 1985-06-01 Nec Corp 半導体装置の製造方法
JPS60235446A (ja) * 1984-05-09 1985-11-22 Nec Corp 半導体装置とその製造方法

Also Published As

Publication number Publication date
JPS62219954A (ja) 1987-09-28

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