JPH0371772B2 - - Google Patents
Info
- Publication number
- JPH0371772B2 JPH0371772B2 JP57064845A JP6484582A JPH0371772B2 JP H0371772 B2 JPH0371772 B2 JP H0371772B2 JP 57064845 A JP57064845 A JP 57064845A JP 6484582 A JP6484582 A JP 6484582A JP H0371772 B2 JPH0371772 B2 JP H0371772B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- region
- base
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 229920005591 polysilicon Polymers 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 230000009977 dual effect Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28014281A | 1981-06-30 | 1981-06-30 | |
| US280142 | 1981-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS587862A JPS587862A (ja) | 1983-01-17 |
| JPH0371772B2 true JPH0371772B2 (de) | 1991-11-14 |
Family
ID=23071863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6484582A Granted JPS587862A (ja) | 1981-06-30 | 1982-04-20 | バイポ−ラ型トランジスタ−構造体及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS587862A (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8105920A (nl) * | 1981-12-31 | 1983-07-18 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
| JPS58166766A (ja) * | 1982-03-27 | 1983-10-01 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS61131562A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0658912B2 (ja) * | 1985-05-07 | 1994-08-03 | 日本電信電話株式会社 | バイポーラトランジスタの製造方法 |
| DE3825701A1 (de) * | 1987-07-29 | 1989-02-09 | Toshiba Kawasaki Kk | Verfahren zur herstellung eines bipolaren transistors |
| US5096842A (en) * | 1988-05-16 | 1992-03-17 | Kabushiki Kaisha Toshiba | Method of fabricating bipolar transistor using self-aligned polysilicon technology |
| JPH02153534A (ja) * | 1988-12-06 | 1990-06-13 | Toshiba Corp | 半導体装置の製造方法 |
| JP4245177B2 (ja) | 2006-07-10 | 2009-03-25 | 日立プラズマディスプレイ株式会社 | 熱処理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5470776A (en) * | 1977-11-16 | 1979-06-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
-
1982
- 1982-04-20 JP JP6484582A patent/JPS587862A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5470776A (en) * | 1977-11-16 | 1979-06-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS587862A (ja) | 1983-01-17 |
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