JPH0371768B2 - - Google Patents

Info

Publication number
JPH0371768B2
JPH0371768B2 JP57085937A JP8593782A JPH0371768B2 JP H0371768 B2 JPH0371768 B2 JP H0371768B2 JP 57085937 A JP57085937 A JP 57085937A JP 8593782 A JP8593782 A JP 8593782A JP H0371768 B2 JPH0371768 B2 JP H0371768B2
Authority
JP
Japan
Prior art keywords
substrate
fet
insulating film
metal silicide
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57085937A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58202525A (ja
Inventor
Shoichi Kagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57085937A priority Critical patent/JPS58202525A/ja
Priority to EP83105022A priority patent/EP0098941B1/en
Priority to US06/496,581 priority patent/US4536943A/en
Priority to DE8383105022T priority patent/DE3374102D1/de
Publication of JPS58202525A publication Critical patent/JPS58202525A/ja
Publication of JPH0371768B2 publication Critical patent/JPH0371768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/0112—
    • H10D64/011—
    • H10D64/0111—
    • H10P32/1414—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP57085937A 1982-05-21 1982-05-21 半導体装置の製造方法 Granted JPS58202525A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57085937A JPS58202525A (ja) 1982-05-21 1982-05-21 半導体装置の製造方法
EP83105022A EP0098941B1 (en) 1982-05-21 1983-05-20 Method of making ohmic contacts regions and device manufactured by the method
US06/496,581 US4536943A (en) 1982-05-21 1983-05-20 Method of manufacturing a FET
DE8383105022T DE3374102D1 (en) 1982-05-21 1983-05-20 Method of making ohmic contacts regions and device manufactured by the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57085937A JPS58202525A (ja) 1982-05-21 1982-05-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58202525A JPS58202525A (ja) 1983-11-25
JPH0371768B2 true JPH0371768B2 (enExample) 1991-11-14

Family

ID=13872669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57085937A Granted JPS58202525A (ja) 1982-05-21 1982-05-21 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4536943A (enExample)
EP (1) EP0098941B1 (enExample)
JP (1) JPS58202525A (enExample)
DE (1) DE3374102D1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702000A (en) * 1986-03-19 1987-10-27 Harris Corporation Technique for elimination of polysilicon stringers in direct moat field oxide structure
US4818725A (en) * 1986-09-15 1989-04-04 Harris Corp. Technique for forming planarized gate structure
US4871688A (en) * 1988-05-02 1989-10-03 Micron Technology, Inc. Sequence of etching polysilicon in semiconductor memory devices
US4957878A (en) * 1988-05-02 1990-09-18 Micron Technology, Inc. Reduced mask manufacture of semiconductor memory devices
JP3285934B2 (ja) * 1991-07-16 2002-05-27 株式会社東芝 半導体装置の製造方法
KR960008558B1 (en) * 1993-03-02 1996-06-28 Samsung Electronics Co Ltd Low resistance contact structure and manufacturing method of high integrated semiconductor device
US5342798A (en) * 1993-11-23 1994-08-30 Vlsi Technology, Inc. Method for selective salicidation of source/drain regions of a transistor
JPH08255907A (ja) * 1995-01-18 1996-10-01 Canon Inc 絶縁ゲート型トランジスタ及びその製造方法
JP3525316B2 (ja) * 1996-11-12 2004-05-10 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967981A (en) * 1971-01-14 1976-07-06 Shumpei Yamazaki Method for manufacturing a semiconductor field effort transistor
JPS49131585A (enExample) * 1973-04-20 1974-12-17
US4127931A (en) * 1974-10-04 1978-12-05 Nippon Electric Co., Ltd. Semiconductor device
US4282647A (en) * 1978-04-04 1981-08-11 Standard Microsystems Corporation Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask
JPS5561037A (en) * 1978-10-31 1980-05-08 Toshiba Corp Preparation of semiconductor device
NL7900280A (nl) * 1979-01-15 1980-07-17 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US4319395A (en) * 1979-06-28 1982-03-16 Motorola, Inc. Method of making self-aligned device
US4431460A (en) * 1982-03-08 1984-02-14 International Business Machines Corporation Method of producing shallow, narrow base bipolar transistor structures via dual implantations of selected polycrystalline layer

Also Published As

Publication number Publication date
US4536943A (en) 1985-08-27
DE3374102D1 (en) 1987-11-19
EP0098941B1 (en) 1987-10-14
EP0098941A1 (en) 1984-01-25
JPS58202525A (ja) 1983-11-25

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