JPH035725B2 - - Google Patents
Info
- Publication number
- JPH035725B2 JPH035725B2 JP57207184A JP20718482A JPH035725B2 JP H035725 B2 JPH035725 B2 JP H035725B2 JP 57207184 A JP57207184 A JP 57207184A JP 20718482 A JP20718482 A JP 20718482A JP H035725 B2 JPH035725 B2 JP H035725B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate
- liquid crystal
- electrodes
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 47
- 239000004973 liquid crystal related substance Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 5
- 238000007743 anodising Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910002665 PbTe Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- XQUXKZZNEFRCAW-UHFFFAOYSA-N fenpropathrin Chemical compound CC1(C)C(C)(C)C1C(=O)OC(C#N)C1=CC=CC(OC=2C=CC=CC=2)=C1 XQUXKZZNEFRCAW-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57207184A JPS5995514A (ja) | 1982-11-25 | 1982-11-25 | 液晶表示装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57207184A JPS5995514A (ja) | 1982-11-25 | 1982-11-25 | 液晶表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5995514A JPS5995514A (ja) | 1984-06-01 |
| JPH035725B2 true JPH035725B2 (enrdf_load_stackoverflow) | 1991-01-28 |
Family
ID=16535632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57207184A Granted JPS5995514A (ja) | 1982-11-25 | 1982-11-25 | 液晶表示装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5995514A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6148886A (ja) * | 1984-08-16 | 1986-03-10 | セイコーエプソン株式会社 | アクテイプマトリツクス基板 |
| JPS61138286A (ja) * | 1984-12-11 | 1986-06-25 | セイコーエプソン株式会社 | 液晶表示装置 |
| JP2598922B2 (ja) * | 1987-10-09 | 1997-04-09 | 株式会社フロンテック | 薄膜トランジスタの製造方法 |
| JPH0646279B2 (ja) * | 1988-03-17 | 1994-06-15 | 株式会社精工舎 | 薄膜トランジスタアレイの製造方法 |
| JP3245959B2 (ja) * | 1992-06-05 | 2002-01-15 | 松下電器産業株式会社 | 液晶画像表示装置の製造方法 |
-
1982
- 1982-11-25 JP JP57207184A patent/JPS5995514A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5995514A (ja) | 1984-06-01 |
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