JPH0348657B2 - - Google Patents

Info

Publication number
JPH0348657B2
JPH0348657B2 JP57080005A JP8000582A JPH0348657B2 JP H0348657 B2 JPH0348657 B2 JP H0348657B2 JP 57080005 A JP57080005 A JP 57080005A JP 8000582 A JP8000582 A JP 8000582A JP H0348657 B2 JPH0348657 B2 JP H0348657B2
Authority
JP
Japan
Prior art keywords
film
sio
forming
type
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57080005A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58197839A (ja
Inventor
Makoto Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57080005A priority Critical patent/JPS58197839A/ja
Publication of JPS58197839A publication Critical patent/JPS58197839A/ja
Publication of JPH0348657B2 publication Critical patent/JPH0348657B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0121—
    • H10W10/13—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP57080005A 1982-05-14 1982-05-14 半導体装置の製造方法 Granted JPS58197839A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57080005A JPS58197839A (ja) 1982-05-14 1982-05-14 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57080005A JPS58197839A (ja) 1982-05-14 1982-05-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58197839A JPS58197839A (ja) 1983-11-17
JPH0348657B2 true JPH0348657B2 (ref) 1991-07-25

Family

ID=13706210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57080005A Granted JPS58197839A (ja) 1982-05-14 1982-05-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58197839A (ref)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810757B2 (ja) * 1987-05-25 1996-01-31 松下電子工業株式会社 半導体装置の製造方法
US9685524B2 (en) 2005-03-11 2017-06-20 Vishay-Siliconix Narrow semiconductor trench structure
TWI489557B (zh) 2005-12-22 2015-06-21 Vishay Siliconix 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體
US8409954B2 (en) 2006-03-21 2013-04-02 Vishay-Silconix Ultra-low drain-source resistance power MOSFET
US9412883B2 (en) 2011-11-22 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for MOS capacitors in replacement gate process

Also Published As

Publication number Publication date
JPS58197839A (ja) 1983-11-17

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