JPH0348268B2 - - Google Patents
Info
- Publication number
- JPH0348268B2 JPH0348268B2 JP62312509A JP31250987A JPH0348268B2 JP H0348268 B2 JPH0348268 B2 JP H0348268B2 JP 62312509 A JP62312509 A JP 62312509A JP 31250987 A JP31250987 A JP 31250987A JP H0348268 B2 JPH0348268 B2 JP H0348268B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- gas
- fluorine
- clf
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 52
- 238000004140 cleaning Methods 0.000 claims description 44
- 229910052731 fluorine Inorganic materials 0.000 claims description 33
- OMRRUNXAWXNVFW-UHFFFAOYSA-N fluoridochlorine Chemical compound ClF OMRRUNXAWXNVFW-UHFFFAOYSA-N 0.000 claims description 29
- 239000011737 fluorine Substances 0.000 claims description 29
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 27
- 239000001257 hydrogen Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- 239000000356 contaminant Substances 0.000 claims description 19
- 238000011109 contamination Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 239000010408 film Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 21
- 239000000126 substance Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- -1 fluorine ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005202 decontamination Methods 0.000 description 2
- 230000003588 decontaminative effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 210000000608 photoreceptor cell Anatomy 0.000 description 2
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HXELGNKCCDGMMN-UHFFFAOYSA-N [F].[Cl] Chemical compound [F].[Cl] HXELGNKCCDGMMN-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- MZJUGRUTVANEDW-UHFFFAOYSA-N bromine fluoride Chemical compound BrF MZJUGRUTVANEDW-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 125000001309 chloro group Chemical class Cl* 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31250987A JPH01152274A (ja) | 1987-12-09 | 1987-12-09 | 膜形成操作系におけるフッ化塩素クリーニング後の汚染除去方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31250987A JPH01152274A (ja) | 1987-12-09 | 1987-12-09 | 膜形成操作系におけるフッ化塩素クリーニング後の汚染除去方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01152274A JPH01152274A (ja) | 1989-06-14 |
| JPH0348268B2 true JPH0348268B2 (zh) | 1991-07-23 |
Family
ID=18030076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31250987A Granted JPH01152274A (ja) | 1987-12-09 | 1987-12-09 | 膜形成操作系におけるフッ化塩素クリーニング後の汚染除去方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01152274A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11390944B2 (en) | 2017-04-18 | 2022-07-19 | Tokyo Electron Limited | Film-forming device and method for cleaning same |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2773078B2 (ja) * | 1988-03-11 | 1998-07-09 | 東京エレクトロン株式会社 | 処理装置及びその洗浄方法 |
| JPH02185977A (ja) * | 1989-01-12 | 1990-07-20 | Sanyo Electric Co Ltd | 膜形成用真空装置 |
| JP2539917B2 (ja) * | 1989-07-10 | 1996-10-02 | セントラル硝子株式会社 | フッ化塩素ガスによる炭素材料のクリ―ニング方法 |
| JP2892694B2 (ja) * | 1989-07-31 | 1999-05-17 | 株式会社日立製作所 | プラズマクリーニング方法 |
| JPH0375373A (ja) * | 1989-08-18 | 1991-03-29 | Fujitsu Ltd | プラズマ処理装置の清浄化方法 |
| JP3004696B2 (ja) * | 1989-08-25 | 2000-01-31 | アプライド マテリアルズ インコーポレーテッド | 化学的蒸着装置の洗浄方法 |
| JPH03130368A (ja) * | 1989-09-22 | 1991-06-04 | Applied Materials Inc | 半導体ウェーハプロセス装置の洗浄方法 |
| US5043299B1 (en) * | 1989-12-01 | 1997-02-25 | Applied Materials Inc | Process for selective deposition of tungsten on semiconductor wafer |
| JPH03243775A (ja) * | 1990-02-20 | 1991-10-30 | Iwatani Internatl Corp | プラズマ内蔵式セラミックス膜形成装置内の汚染物清浄用ガス |
| JP2646811B2 (ja) * | 1990-07-13 | 1997-08-27 | ソニー株式会社 | ドライエッチング方法 |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| JP2909364B2 (ja) * | 1993-09-20 | 1999-06-23 | 東京エレクトロン株式会社 | 処理装置及びそのクリーニング方法 |
| KR0164922B1 (ko) * | 1994-02-21 | 1999-02-01 | 모리시다 요이치 | 반도체제조장치, 가스공급장치 및 배가스처리장치와 공압기기의 대기개방방법 |
| JP2000124195A (ja) * | 1998-10-14 | 2000-04-28 | Tokyo Electron Ltd | 表面処理方法及びその装置 |
| JP4669605B2 (ja) | 2000-11-20 | 2011-04-13 | 東京エレクトロン株式会社 | 半導体製造装置のクリーニング方法 |
| JP2003077839A (ja) * | 2001-08-30 | 2003-03-14 | Toshiba Corp | 半導体製造装置のパージ方法及び半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5351142A (en) * | 1976-10-19 | 1978-05-10 | Kernforschungsanlage Juelich | Method of and device for cleaning surface |
| JPS62214175A (ja) * | 1986-03-13 | 1987-09-19 | Fujitsu Ltd | 減圧ｃｖｄ処理装置のクリーニング法 |
-
1987
- 1987-12-09 JP JP31250987A patent/JPH01152274A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5351142A (en) * | 1976-10-19 | 1978-05-10 | Kernforschungsanlage Juelich | Method of and device for cleaning surface |
| JPS62214175A (ja) * | 1986-03-13 | 1987-09-19 | Fujitsu Ltd | 減圧ｃｖｄ処理装置のクリーニング法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11390944B2 (en) | 2017-04-18 | 2022-07-19 | Tokyo Electron Limited | Film-forming device and method for cleaning same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01152274A (ja) | 1989-06-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080723 Year of fee payment: 17 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
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