JPH0348247U - - Google Patents

Info

Publication number
JPH0348247U
JPH0348247U JP10990389U JP10990389U JPH0348247U JP H0348247 U JPH0348247 U JP H0348247U JP 10990389 U JP10990389 U JP 10990389U JP 10990389 U JP10990389 U JP 10990389U JP H0348247 U JPH0348247 U JP H0348247U
Authority
JP
Japan
Prior art keywords
electrode wiring
semiconductor device
wiring
insulating film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10990389U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10990389U priority Critical patent/JPH0348247U/ja
Publication of JPH0348247U publication Critical patent/JPH0348247U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

【図面の簡単な説明】
第1図は本考案の一実施例の半導体装置の縦断
面図、第2図は本考案の他の実施例の多層配線構
造の半導体装置の縦断面図、第3図は従来の半導
体装置の縦断面図である。 1……半導体基板、2……フイールド酸化膜、
3……テーパー付電極配線、4……表面保護膜、
5……テーパー付第1層電極配線、6……層間絶
縁膜、7……第2層電極配線、8……テーパーな
し電極配線。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体基板上に設けられた電極配線表面が絶縁
    膜でおおわれている半導体装置において、前記電
    極配線の端部は該配線の底面が上面より幅広くな
    るようにテーパーを有することを特徴とする半導
    体装置。
JP10990389U 1989-09-19 1989-09-19 Pending JPH0348247U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10990389U JPH0348247U (ja) 1989-09-19 1989-09-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10990389U JPH0348247U (ja) 1989-09-19 1989-09-19

Publications (1)

Publication Number Publication Date
JPH0348247U true JPH0348247U (ja) 1991-05-08

Family

ID=31658462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10990389U Pending JPH0348247U (ja) 1989-09-19 1989-09-19

Country Status (1)

Country Link
JP (1) JPH0348247U (ja)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948280A (ja) * 1972-09-08 1974-05-10
JPS554970A (en) * 1978-06-27 1980-01-14 Nippon Telegr & Teleph Corp <Ntt> Formation of electrode or wiring layer on substrate
JPS63202953A (ja) * 1987-02-19 1988-08-22 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS63299140A (ja) * 1987-05-28 1988-12-06 Fujitsu Ltd 半導体装置の製造方法
JPH01100924A (ja) * 1987-10-14 1989-04-19 Seiko Epson Corp アクティプマトリクス基板の製造方法
JPH01204330A (ja) * 1988-02-08 1989-08-16 Toshiba Corp 塗布装置
JPH01235353A (ja) * 1988-03-16 1989-09-20 Nec Corp 半導体装置の製造方法
JPH02250316A (ja) * 1989-03-23 1990-10-08 Sony Corp 半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948280A (ja) * 1972-09-08 1974-05-10
JPS554970A (en) * 1978-06-27 1980-01-14 Nippon Telegr & Teleph Corp <Ntt> Formation of electrode or wiring layer on substrate
JPS63202953A (ja) * 1987-02-19 1988-08-22 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS63299140A (ja) * 1987-05-28 1988-12-06 Fujitsu Ltd 半導体装置の製造方法
JPH01100924A (ja) * 1987-10-14 1989-04-19 Seiko Epson Corp アクティプマトリクス基板の製造方法
JPH01204330A (ja) * 1988-02-08 1989-08-16 Toshiba Corp 塗布装置
JPH01235353A (ja) * 1988-03-16 1989-09-20 Nec Corp 半導体装置の製造方法
JPH02250316A (ja) * 1989-03-23 1990-10-08 Sony Corp 半導体装置

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