JPH0347761B2 - - Google Patents

Info

Publication number
JPH0347761B2
JPH0347761B2 JP59141375A JP14137584A JPH0347761B2 JP H0347761 B2 JPH0347761 B2 JP H0347761B2 JP 59141375 A JP59141375 A JP 59141375A JP 14137584 A JP14137584 A JP 14137584A JP H0347761 B2 JPH0347761 B2 JP H0347761B2
Authority
JP
Japan
Prior art keywords
package
transistor element
chip
drain
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59141375A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6122656A (ja
Inventor
Kenzo Wada
Eiji Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59141375A priority Critical patent/JPS6122656A/ja
Priority to CA000486502A priority patent/CA1238720A/en
Priority to DE8585108542T priority patent/DE3570950D1/de
Priority to EP85108542A priority patent/EP0174457B1/en
Priority to AU44750/85A priority patent/AU570808B2/en
Publication of JPS6122656A publication Critical patent/JPS6122656A/ja
Priority to US07/129,390 priority patent/US4841353A/en
Publication of JPH0347761B2 publication Critical patent/JPH0347761B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5453—Dispositions of bond wires connecting between multiple bond pads on a chip, e.g. daisy chain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
JP59141375A 1984-07-10 1984-07-10 発振用トランジスタ素子 Granted JPS6122656A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59141375A JPS6122656A (ja) 1984-07-10 1984-07-10 発振用トランジスタ素子
CA000486502A CA1238720A (en) 1984-07-10 1985-07-09 Transistor devices for microwave oscillator elements
DE8585108542T DE3570950D1 (en) 1984-07-10 1985-07-09 Transistor devices for microwave oscillator elements
EP85108542A EP0174457B1 (en) 1984-07-10 1985-07-09 Transistor devices for microwave oscillator elements
AU44750/85A AU570808B2 (en) 1984-07-10 1985-07-10 Transistor devices for microwave oscillator elements
US07/129,390 US4841353A (en) 1984-07-10 1987-11-24 Transistor devices for microwave oscillator elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59141375A JPS6122656A (ja) 1984-07-10 1984-07-10 発振用トランジスタ素子

Publications (2)

Publication Number Publication Date
JPS6122656A JPS6122656A (ja) 1986-01-31
JPH0347761B2 true JPH0347761B2 (https=) 1991-07-22

Family

ID=15290531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59141375A Granted JPS6122656A (ja) 1984-07-10 1984-07-10 発振用トランジスタ素子

Country Status (6)

Country Link
US (1) US4841353A (https=)
EP (1) EP0174457B1 (https=)
JP (1) JPS6122656A (https=)
AU (1) AU570808B2 (https=)
CA (1) CA1238720A (https=)
DE (1) DE3570950D1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63132505A (ja) * 1986-11-24 1988-06-04 Mitsubishi Electric Corp 半導体装置
FR2608318B1 (fr) * 1986-12-16 1989-06-16 Thomson Semiconducteurs Dispositif semi-conducteur a faible bruit en hyperfrequence, monte dans un boitier
GB2220113B (en) * 1988-06-22 1992-02-12 Philips Electronic Associated Microwave oscillator devices
GB2223896A (en) * 1988-10-12 1990-04-18 Philips Electronic Associated Radio receivers
US5126827A (en) * 1991-01-17 1992-06-30 Avantek, Inc. Semiconductor chip header having particular surface metallization
FR2710192B1 (fr) * 1991-07-29 1996-01-26 Gen Electric Composant micro-onde ayant des caractéristiques fonctionnelles ajustées et procédé d'ajustement.
DE4134753A1 (de) * 1991-10-22 1993-04-29 Aeg Mobile Communication Breitbandige hochfrequenz-schaltungsanordnung
US5235300A (en) * 1992-03-16 1993-08-10 Trw Inc. Millimeter module package

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969752A (en) * 1973-12-03 1976-07-13 Power Hybrids, Inc. Hybrid transistor
JPS55102292A (en) * 1979-01-29 1980-08-05 Nippon Electric Co High frequency high output transistor amplifier
JPS55151372A (en) * 1979-05-16 1980-11-25 Nec Corp Ultrahigh frequency semiconductor device
JPS56155575A (en) * 1980-04-30 1981-12-01 Mitsubishi Electric Corp Internal matching semiconductor element
JPS6035843B2 (ja) * 1980-07-21 1985-08-16 富士通株式会社 キヤパシタ
JPS57115852A (en) * 1981-01-10 1982-07-19 Mitsubishi Electric Corp Microwave transistor mount
JPS58124304A (ja) * 1982-01-20 1983-07-23 Toshiba Corp マイクロ波発振器

Also Published As

Publication number Publication date
US4841353A (en) 1989-06-20
JPS6122656A (ja) 1986-01-31
AU4475085A (en) 1986-01-16
EP0174457A1 (en) 1986-03-19
DE3570950D1 (en) 1989-07-13
CA1238720A (en) 1988-06-28
AU570808B2 (en) 1988-03-24
EP0174457B1 (en) 1989-06-07

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