JPS55151372A - Ultrahigh frequency semiconductor device - Google Patents

Ultrahigh frequency semiconductor device

Info

Publication number
JPS55151372A
JPS55151372A JP5994579A JP5994579A JPS55151372A JP S55151372 A JPS55151372 A JP S55151372A JP 5994579 A JP5994579 A JP 5994579A JP 5994579 A JP5994579 A JP 5994579A JP S55151372 A JPS55151372 A JP S55151372A
Authority
JP
Japan
Prior art keywords
inductor
electrode
main line
parallel capacitors
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5994579A
Other languages
Japanese (ja)
Inventor
Yoichiro Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5994579A priority Critical patent/JPS55151372A/en
Publication of JPS55151372A publication Critical patent/JPS55151372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To simplify the construction of an ultrahigh frequency semiconductor device by superimposing parallel capacitors as the constituents of an impedance matching circuit through an insulating film with branch formed on the grounding electrode and desired lead wire portion or main line. CONSTITUTION:A circular looplike inductor 8 is connected in series with the gate electrode 2 of a field effect trnsistor, and parallel capacitors 11 are formed between the grounding electrode 7 and the central conductor 10 of the coplanar line forming the main line through a silicon oxide film 9 at the input end of the inductor 8. A circular looplike inductor 12 is connected in series with the drain electrode 4 of the field effect transistor, and parallel capacitors 15 are formed between the electrode 7 and the central conductor 14 of the coplanar line forming the main line through a silicon oxide film 13 at the output end of the inductor 12.
JP5994579A 1979-05-16 1979-05-16 Ultrahigh frequency semiconductor device Pending JPS55151372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5994579A JPS55151372A (en) 1979-05-16 1979-05-16 Ultrahigh frequency semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5994579A JPS55151372A (en) 1979-05-16 1979-05-16 Ultrahigh frequency semiconductor device

Publications (1)

Publication Number Publication Date
JPS55151372A true JPS55151372A (en) 1980-11-25

Family

ID=13127785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5994579A Pending JPS55151372A (en) 1979-05-16 1979-05-16 Ultrahigh frequency semiconductor device

Country Status (1)

Country Link
JP (1) JPS55151372A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839052A (en) * 1981-08-14 1983-03-07 テキサス・インスツルメンツ・インコ−ポレイテツド Monolithic microwave integrated circuit
JPS58106875A (en) * 1981-12-04 1983-06-25 ナシヨナル・エアロノ−テイツクス・アンド・スペ−ス・アドミニストレイシヨン Microwave field effect transistor
JPS59175155A (en) * 1983-03-25 1984-10-03 Toshiba Corp Circuit substrate
JPS62194681A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Semiconductor device
JPS6359011A (en) * 1986-08-27 1988-03-14 Asia Electron Kk High density integrated circuit
US4841353A (en) * 1984-07-10 1989-06-20 Nec Corporation Transistor devices for microwave oscillator elements
US5500543A (en) * 1994-04-04 1996-03-19 Motorola Sensor for determining a ratio of materials in a mixture and method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129484A (en) * 1973-04-11 1974-12-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129484A (en) * 1973-04-11 1974-12-11

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839052A (en) * 1981-08-14 1983-03-07 テキサス・インスツルメンツ・インコ−ポレイテツド Monolithic microwave integrated circuit
JPS58106875A (en) * 1981-12-04 1983-06-25 ナシヨナル・エアロノ−テイツクス・アンド・スペ−ス・アドミニストレイシヨン Microwave field effect transistor
JPS59175155A (en) * 1983-03-25 1984-10-03 Toshiba Corp Circuit substrate
US4841353A (en) * 1984-07-10 1989-06-20 Nec Corporation Transistor devices for microwave oscillator elements
JPS62194681A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Semiconductor device
JPS6359011A (en) * 1986-08-27 1988-03-14 Asia Electron Kk High density integrated circuit
JPH0517725B2 (en) * 1986-08-27 1993-03-10 Asia Electronics
US5500543A (en) * 1994-04-04 1996-03-19 Motorola Sensor for determining a ratio of materials in a mixture and method
US5658810A (en) * 1994-04-04 1997-08-19 Motorola Method of making a sensor for determining a ratio of materials in a mixture

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