JPH0347592B2 - - Google Patents

Info

Publication number
JPH0347592B2
JPH0347592B2 JP60058950A JP5895085A JPH0347592B2 JP H0347592 B2 JPH0347592 B2 JP H0347592B2 JP 60058950 A JP60058950 A JP 60058950A JP 5895085 A JP5895085 A JP 5895085A JP H0347592 B2 JPH0347592 B2 JP H0347592B2
Authority
JP
Japan
Prior art keywords
main surface
layer
impurity concentration
semiconductor substrate
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60058950A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61218171A (ja
Inventor
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60058950A priority Critical patent/JPS61218171A/ja
Priority to EP85112805A priority patent/EP0178582A3/en
Priority to US06/787,116 priority patent/US4713679A/en
Publication of JPS61218171A publication Critical patent/JPS61218171A/ja
Publication of JPH0347592B2 publication Critical patent/JPH0347592B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP60058950A 1984-10-15 1985-03-23 半導体装置 Granted JPS61218171A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60058950A JPS61218171A (ja) 1985-03-23 1985-03-23 半導体装置
EP85112805A EP0178582A3 (en) 1984-10-15 1985-10-09 Reverse blocking type semiconductor device
US06/787,116 US4713679A (en) 1984-10-15 1985-10-15 Reverse blocking type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60058950A JPS61218171A (ja) 1985-03-23 1985-03-23 半導体装置

Publications (2)

Publication Number Publication Date
JPS61218171A JPS61218171A (ja) 1986-09-27
JPH0347592B2 true JPH0347592B2 (enrdf_load_stackoverflow) 1991-07-19

Family

ID=13099105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60058950A Granted JPS61218171A (ja) 1984-10-15 1985-03-23 半導体装置

Country Status (1)

Country Link
JP (1) JPS61218171A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202967A (ja) * 1987-02-19 1988-08-22 Hitachi Ltd 半導体装置
JP5460247B2 (ja) * 2009-11-10 2014-04-02 新電元工業株式会社 サイリスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178369A (en) * 1981-04-28 1982-11-02 Meidensha Electric Mfg Co Ltd Gate turnoff thyristor

Also Published As

Publication number Publication date
JPS61218171A (ja) 1986-09-27

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