JPH0332212B2 - - Google Patents
Info
- Publication number
- JPH0332212B2 JPH0332212B2 JP56159812A JP15981281A JPH0332212B2 JP H0332212 B2 JPH0332212 B2 JP H0332212B2 JP 56159812 A JP56159812 A JP 56159812A JP 15981281 A JP15981281 A JP 15981281A JP H0332212 B2 JPH0332212 B2 JP H0332212B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- disk
- wax
- mirror
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P50/00—
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56159812A JPS5860541A (ja) | 1981-10-07 | 1981-10-07 | ウエハの加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56159812A JPS5860541A (ja) | 1981-10-07 | 1981-10-07 | ウエハの加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5860541A JPS5860541A (ja) | 1983-04-11 |
| JPH0332212B2 true JPH0332212B2 (member.php) | 1991-05-10 |
Family
ID=15701785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56159812A Granted JPS5860541A (ja) | 1981-10-07 | 1981-10-07 | ウエハの加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860541A (member.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2534210B2 (ja) * | 1989-04-03 | 1996-09-11 | 三菱電機株式会社 | ウエハ剥し装置 |
| JP2011025338A (ja) * | 2009-07-23 | 2011-02-10 | Disco Abrasive Syst Ltd | 板状物固定方法 |
| JP2012049448A (ja) * | 2010-08-30 | 2012-03-08 | Mitsubishi Chemicals Corp | 窒化物半導体基板の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56164535A (en) * | 1980-05-23 | 1981-12-17 | Toshiba Corp | Manufacture of semicondutor element |
| JPS57147241A (en) * | 1981-03-05 | 1982-09-11 | Nec Corp | Bonding method for crystal wafer |
-
1981
- 1981-10-07 JP JP56159812A patent/JPS5860541A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5860541A (ja) | 1983-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5788560A (en) | Backing pad and method for polishing semiconductor wafer therewith | |
| JP2582030B2 (ja) | 半導体ウエーハの製造方法 | |
| US7460704B2 (en) | Device for stabilizing a workpiece during processing | |
| JPH0332212B2 (member.php) | ||
| JPH0142133B2 (member.php) | ||
| JP3803214B2 (ja) | 半導体装置の製造方法 | |
| JPH02208931A (ja) | 化合物半導体基板の研磨方法 | |
| JPS62132324A (ja) | ウエハ−の面取り研削ダメ−ジ層の除去方法および除去用治具 | |
| JPH08274286A (ja) | Soi基板の製造方法 | |
| JPS644339B2 (member.php) | ||
| JPH06120131A (ja) | ウエハアダプター | |
| JP3358751B2 (ja) | 厚膜レジストの平坦化方法及び半導体素子の製造方法 | |
| JPH03184756A (ja) | ウエーハの研削加工方法 | |
| JP2908915B2 (ja) | ウェハの切断方法および装置 | |
| JPS5972139A (ja) | 薄板材の加工方法 | |
| JPS63123645A (ja) | 半導体装置の製造方法 | |
| JP3118319B2 (ja) | ウエーハ研磨用固定板 | |
| JPH0236072A (ja) | 半導体ウエハの研磨方法およびそれに用いる研磨プレート | |
| JPH09117860A (ja) | 研磨装置 | |
| JPS60226124A (ja) | レジスト塗布装置 | |
| JPS59123229A (ja) | 半導体装置の製造方法 | |
| JP2519139B2 (ja) | Si単結晶薄膜の厚さを均一化する方法 | |
| JPS62181869A (ja) | 半導体ウエハの研磨方法 | |
| JPH0620092B2 (ja) | 半導体ペレットのダイボンディング用チャック装置 | |
| JPS6181651A (ja) | 半導体装置の製造方法 |