JPH0329293B2 - - Google Patents

Info

Publication number
JPH0329293B2
JPH0329293B2 JP60062322A JP6232285A JPH0329293B2 JP H0329293 B2 JPH0329293 B2 JP H0329293B2 JP 60062322 A JP60062322 A JP 60062322A JP 6232285 A JP6232285 A JP 6232285A JP H0329293 B2 JPH0329293 B2 JP H0329293B2
Authority
JP
Japan
Prior art keywords
gate oxide
oxide film
film
thin film
polysilicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60062322A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61220451A (ja
Inventor
Toshihiko Usu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60062322A priority Critical patent/JPS61220451A/ja
Publication of JPS61220451A publication Critical patent/JPS61220451A/ja
Publication of JPH0329293B2 publication Critical patent/JPH0329293B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP60062322A 1985-03-27 1985-03-27 半導体装置の製造方法 Granted JPS61220451A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60062322A JPS61220451A (ja) 1985-03-27 1985-03-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062322A JPS61220451A (ja) 1985-03-27 1985-03-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61220451A JPS61220451A (ja) 1986-09-30
JPH0329293B2 true JPH0329293B2 (enrdf_load_stackoverflow) 1991-04-23

Family

ID=13196787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60062322A Granted JPS61220451A (ja) 1985-03-27 1985-03-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61220451A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445058B1 (ko) * 1997-06-30 2004-11-16 주식회사 하이닉스반도체 반도체장치의게이트산화막형성방법
WO2013008605A1 (ja) 2011-07-11 2013-01-17 栗田工業株式会社 メタルゲート半導体の洗浄方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4858778A (enrdf_load_stackoverflow) * 1971-11-22 1973-08-17
JPS59175767A (ja) * 1983-03-25 1984-10-04 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS59195859A (ja) * 1983-04-21 1984-11-07 Oki Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS61220451A (ja) 1986-09-30

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