JPH0328828B2 - - Google Patents
Info
- Publication number
- JPH0328828B2 JPH0328828B2 JP57098068A JP9806882A JPH0328828B2 JP H0328828 B2 JPH0328828 B2 JP H0328828B2 JP 57098068 A JP57098068 A JP 57098068A JP 9806882 A JP9806882 A JP 9806882A JP H0328828 B2 JPH0328828 B2 JP H0328828B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- capacitor electrode
- nitride film
- capacitor
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 55
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- 150000004767 nitrides Chemical class 0.000 claims description 37
- 239000012535 impurity Substances 0.000 claims description 28
- 238000009792 diffusion process Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57098068A JPS58215067A (ja) | 1982-06-08 | 1982-06-08 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57098068A JPS58215067A (ja) | 1982-06-08 | 1982-06-08 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58215067A JPS58215067A (ja) | 1983-12-14 |
| JPH0328828B2 true JPH0328828B2 (US08188275-20120529-C00054.png) | 1991-04-22 |
Family
ID=14210014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57098068A Granted JPS58215067A (ja) | 1982-06-08 | 1982-06-08 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58215067A (US08188275-20120529-C00054.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0750769B2 (ja) * | 1985-09-09 | 1995-05-31 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPS6411347A (en) * | 1987-07-03 | 1989-01-13 | Rohm Co Ltd | Monolithic integrated circuit |
| JPH0770616B2 (ja) * | 1988-11-18 | 1995-07-31 | 日本電気株式会社 | 半導体メモリセルおよびその製造方法 |
| ES2103778T3 (es) * | 1990-05-31 | 1997-10-01 | Canon Kk | Metodo para la fabricacion de un dispositivo de memoria semiconductor, que tiene un condensador. |
| JP2846286B2 (ja) * | 1996-05-20 | 1999-01-13 | 株式会社日立製作所 | 半導体記憶装置の製造方法 |
| JP2839874B2 (ja) * | 1996-09-17 | 1998-12-16 | 株式会社日立製作所 | 半導体記憶装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53108392A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Semiconductor device |
| JPS556866A (en) * | 1978-06-29 | 1980-01-18 | Nec Corp | Semiconductor device |
| JPS5658254A (en) * | 1979-10-17 | 1981-05-21 | Oki Electric Ind Co Ltd | Manufacture of mos type semiconductor memory device |
-
1982
- 1982-06-08 JP JP57098068A patent/JPS58215067A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53108392A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Semiconductor device |
| JPS556866A (en) * | 1978-06-29 | 1980-01-18 | Nec Corp | Semiconductor device |
| JPS5658254A (en) * | 1979-10-17 | 1981-05-21 | Oki Electric Ind Co Ltd | Manufacture of mos type semiconductor memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58215067A (ja) | 1983-12-14 |
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