JPH0328070B2 - - Google Patents

Info

Publication number
JPH0328070B2
JPH0328070B2 JP56047447A JP4744781A JPH0328070B2 JP H0328070 B2 JPH0328070 B2 JP H0328070B2 JP 56047447 A JP56047447 A JP 56047447A JP 4744781 A JP4744781 A JP 4744781A JP H0328070 B2 JPH0328070 B2 JP H0328070B2
Authority
JP
Japan
Prior art keywords
layer
glass layer
forming
conductivity type
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56047447A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57162456A (en
Inventor
Yoshito Ichinose
Takeshi Fukuda
Masayuki Kikuchi
Toshiji Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56047447A priority Critical patent/JPS57162456A/ja
Publication of JPS57162456A publication Critical patent/JPS57162456A/ja
Publication of JPH0328070B2 publication Critical patent/JPH0328070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56047447A 1981-03-31 1981-03-31 Manufacture of semiconductor device Granted JPS57162456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047447A JPS57162456A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047447A JPS57162456A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57162456A JPS57162456A (en) 1982-10-06
JPH0328070B2 true JPH0328070B2 (enrdf_load_stackoverflow) 1991-04-17

Family

ID=12775393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047447A Granted JPS57162456A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162456A (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227037B2 (enrdf_load_stackoverflow) * 1973-09-20 1977-07-18
JPS51134082A (en) * 1975-05-15 1976-11-20 Iwatsu Electric Co Ltd Method to manufacture the semiconductor unit
JPS5295985A (en) * 1976-02-09 1977-08-12 Hitachi Ltd Manufacture of semiconductor unit
JPS55154746A (en) * 1979-05-22 1980-12-02 Semiconductor Res Found Manufacture of semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS57162456A (en) 1982-10-06

Similar Documents

Publication Publication Date Title
WO1979000684A1 (en) Isolation of integrated circuits by stepwise selective etching,diffusion and thermal oxidation
JPS63140571A (ja) バイポ−ラトランジスタおよびその製造方法
JPS6252963A (ja) バイポ−ラトランジスタの製造方法
JPS62570B2 (enrdf_load_stackoverflow)
JP3176758B2 (ja) 半導体装置の製造方法
US4579625A (en) Method of producing a complementary semiconductor device with a dielectric isolation structure
JPS59108325A (ja) 半導体装置の製造方法
JPH0328070B2 (enrdf_load_stackoverflow)
JPS61135136A (ja) 半導体装置の製造方法
JPH049371B2 (enrdf_load_stackoverflow)
JPH0373139B2 (enrdf_load_stackoverflow)
JP2546651B2 (ja) バイポ−ラトランジスタの製造法
JPS6218758A (ja) 半導体装置の製造方法
JPS60753A (ja) 半導体装置の製造方法
JPH0239093B2 (enrdf_load_stackoverflow)
JPS60244036A (ja) 半導体装置とその製造方法
JPS6154256B2 (enrdf_load_stackoverflow)
JPH01211971A (ja) 半導体装置の製造方法
JPH0644569B2 (ja) シリコン基板上の炭化シリコンデバイスの製造方法
JPH0240921A (ja) バイポーラトランジスタの製造方法
JPS6080275A (ja) 半導体装置の製造方法
JPH027438A (ja) 半導体装置の製造方法
JPH01251658A (ja) 半導体装置の製造方法
JPS6164161A (ja) 半導体装置及びその製造方法
JPH08139181A (ja) Soi構造とその製造方法