JPH032351B2 - - Google Patents

Info

Publication number
JPH032351B2
JPH032351B2 JP59062398A JP6239884A JPH032351B2 JP H032351 B2 JPH032351 B2 JP H032351B2 JP 59062398 A JP59062398 A JP 59062398A JP 6239884 A JP6239884 A JP 6239884A JP H032351 B2 JPH032351 B2 JP H032351B2
Authority
JP
Japan
Prior art keywords
wafer
electrode
emitter
base
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59062398A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60206133A (ja
Inventor
Kazuko Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59062398A priority Critical patent/JPS60206133A/ja
Publication of JPS60206133A publication Critical patent/JPS60206133A/ja
Publication of JPH032351B2 publication Critical patent/JPH032351B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—
    • H10W72/90—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
JP59062398A 1984-03-30 1984-03-30 半導体装置 Granted JPS60206133A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59062398A JPS60206133A (ja) 1984-03-30 1984-03-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59062398A JPS60206133A (ja) 1984-03-30 1984-03-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS60206133A JPS60206133A (ja) 1985-10-17
JPH032351B2 true JPH032351B2 (cg-RX-API-DMAC10.html) 1991-01-14

Family

ID=13198987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59062398A Granted JPS60206133A (ja) 1984-03-30 1984-03-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS60206133A (cg-RX-API-DMAC10.html)

Also Published As

Publication number Publication date
JPS60206133A (ja) 1985-10-17

Similar Documents

Publication Publication Date Title
JPH0779136B2 (ja) 半導体装置
JP3971456B2 (ja) 装着ＳｉＣダイ及びＳｉＣ用ダイ装着方法
JP2010129585A (ja) 半導体装置の製造方法
JPH07263375A (ja) 化合物半導体用オーム接触の製造方法
JPS59189625A (ja) 半導体装置の製造方法
JPH032351B2 (cg-RX-API-DMAC10.html)
JPS61220344A (ja) 半導体装置の製造方法
US3468659A (en) Semiconductor contact alloy
JPS61121435A (ja) 半導体装置の製造方法
JPS6148776B2 (cg-RX-API-DMAC10.html)
JPS6016463A (ja) オ−ム性電極
JPS63253633A (ja) 半導体装置の製造方法
JPH038346A (ja) ろう付け材料
JPS59227119A (ja) シリコン半導体装置
JPS5838942B2 (ja) シヨツトキシヨウヘキガタハンドウタイソウチ オヨビ ソノセイゾウホウ
JPS60136270A (ja) 半導体装置の製造方法
JPS58112336A (ja) 化合物半導体装置の電極形成法
JP2742686B2 (ja) 半導体装置
JPS6220338A (ja) 半導体装置の製造方法
JPS5860535A (ja) 多層電極の製造方法
JPS5845814B2 (ja) 積層金属電極を有する半導体装置
JPS61119049A (ja) 半導体装置の製造方法
JPH0693466B2 (ja) シリコン半導体装置の製造方法
JPS6169122A (ja) 半導体装置の製造方法
JPS62234322A (ja) 半導体装置の製造方法