JPH0317213B2 - - Google Patents

Info

Publication number
JPH0317213B2
JPH0317213B2 JP60029292A JP2929285A JPH0317213B2 JP H0317213 B2 JPH0317213 B2 JP H0317213B2 JP 60029292 A JP60029292 A JP 60029292A JP 2929285 A JP2929285 A JP 2929285A JP H0317213 B2 JPH0317213 B2 JP H0317213B2
Authority
JP
Japan
Prior art keywords
light
xenon
mercury
exposure
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60029292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61189636A (ja
Inventor
Takehiro Kira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP60029292A priority Critical patent/JPS61189636A/ja
Priority to DE19853527855 priority patent/DE3527855A1/de
Priority to GB08519449A priority patent/GB2171214B/en
Priority to FR858511890A priority patent/FR2577695B1/fr
Priority to US06/761,682 priority patent/US4732842A/en
Priority to NL8600303A priority patent/NL8600303A/nl
Publication of JPS61189636A publication Critical patent/JPS61189636A/ja
Publication of JPH0317213B2 publication Critical patent/JPH0317213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60029292A 1985-02-19 1985-02-19 キセノン・水銀放電灯による半導体ウエハ−の露光方法 Granted JPS61189636A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP60029292A JPS61189636A (ja) 1985-02-19 1985-02-19 キセノン・水銀放電灯による半導体ウエハ−の露光方法
DE19853527855 DE3527855A1 (de) 1985-02-19 1985-08-02 Belichtungsverfahren fuer eine halbleiterscheibe mittels einer mit seltenem gas und quecksilber gefuellten entladungslampe
GB08519449A GB2171214B (en) 1985-02-19 1985-08-02 Method of exposing semiconductor wafer by rare gas-mercury discharge lamp
FR858511890A FR2577695B1 (fr) 1985-02-19 1985-08-02 Procede d'exposition d'une pastille a semi-conducteur au moyen d'une lampe a luminescence a gaz rare-mercure
US06/761,682 US4732842A (en) 1985-02-19 1985-08-02 Exposure method of semiconductor wafer by rare gas-mercury discharge lamp
NL8600303A NL8600303A (nl) 1985-02-19 1986-02-07 Werkwijze voor het belichten van een plak halfgeleidermateriaal.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60029292A JPS61189636A (ja) 1985-02-19 1985-02-19 キセノン・水銀放電灯による半導体ウエハ−の露光方法

Publications (2)

Publication Number Publication Date
JPS61189636A JPS61189636A (ja) 1986-08-23
JPH0317213B2 true JPH0317213B2 (cg-RX-API-DMAC7.html) 1991-03-07

Family

ID=12272167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60029292A Granted JPS61189636A (ja) 1985-02-19 1985-02-19 キセノン・水銀放電灯による半導体ウエハ−の露光方法

Country Status (6)

Country Link
US (1) US4732842A (cg-RX-API-DMAC7.html)
JP (1) JPS61189636A (cg-RX-API-DMAC7.html)
DE (1) DE3527855A1 (cg-RX-API-DMAC7.html)
FR (1) FR2577695B1 (cg-RX-API-DMAC7.html)
GB (1) GB2171214B (cg-RX-API-DMAC7.html)
NL (1) NL8600303A (cg-RX-API-DMAC7.html)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0721643B2 (ja) * 1986-03-13 1995-03-08 ウシオ電機株式会社 レジスト処理方法
KR920000942B1 (ko) * 1988-06-23 1992-01-31 도오시바 라이텍크 가부시기가이샤 쇼트아크 방전등
US4907029A (en) * 1988-08-11 1990-03-06 Actinic Systems, Inc. Uniform deep ultraviolet radiant source for sub micron resolution systems
JP2762084B2 (ja) * 1988-09-08 1998-06-04 オプトレックス株式会社 基板のパターニング法
JP2730001B2 (ja) * 1989-03-20 1998-03-25 ウシオ電機株式会社 半導体ウエハー露光方法と露光用水銀灯
DE4410968A1 (de) * 1994-03-29 1995-10-05 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Quecksilberhochdrucklampe
DE4432315A1 (de) * 1994-09-12 1996-03-14 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Quecksilberdampf-Kurzbogenlampe
JPH08148407A (ja) * 1994-11-21 1996-06-07 Nikon Corp 照明光学装置
KR0179855B1 (ko) * 1995-11-02 1999-03-20 문정환 마킹장치가 구비된 얼라이너
US5796468A (en) * 1995-11-02 1998-08-18 Lg Semicon Co., Ltd. Apparatus used to align and mark wafers
DE19729219B4 (de) 1997-07-09 2004-02-19 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Hochdruckentladungslampe mit gekühlter Elektrode sowie entsprechende Elektrode
JP3346291B2 (ja) 1998-07-31 2002-11-18 ウシオ電機株式会社 誘電体バリア放電ランプ、および照射装置
JP2000188085A (ja) 1998-12-22 2000-07-04 Ushio Inc ショートアーク型水銀ランプおよび紫外線発光装置
TW563347B (en) * 2002-06-13 2003-11-21 Veutron Corp Compensation light souce to compensate the optical attenuation caused by optical path and the design method thereof
JP4852225B2 (ja) * 2003-10-20 2012-01-11 大日本印刷株式会社 露光装置および露光方法
JP2005134565A (ja) * 2003-10-29 2005-05-26 Ushio Inc 光源装置
US7922337B2 (en) * 2004-03-16 2011-04-12 Sign-Tronic Ag Method for establishing a light beam with substantially constant luminous intensity
JP4897397B2 (ja) * 2005-12-27 2012-03-14 ハリソン東芝ライティング株式会社 紫外線照射装置
DE102006015759A1 (de) * 2006-04-04 2007-10-18 Atmel Germany Gmbh Vorrichtung und Verfahren zum Behandeln von Wafern
US20080204683A1 (en) * 2007-02-26 2008-08-28 Asml Netherlands B.V. Lithographic apparatus and method
JP2008281934A (ja) * 2007-05-14 2008-11-20 Harison Toshiba Lighting Corp 紫外線照射装置
GB2596574A (en) * 2020-07-01 2022-01-05 Ceravision Ltd Lamp for emitting UV-B radiation & luminaire

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2707247A (en) * 1951-06-05 1955-04-26 Hanovia Chemical & Mfg Co Vapor electric discharge lamp
US3573456A (en) * 1967-07-26 1971-04-06 Opto Mechanisms Inc High resolution projection means for printing micro circuits on photoresist material
BE795755A (fr) * 1972-02-24 1973-08-21 Kalle Ag Procede de fabrication de formes d'impression offset
US4040736A (en) * 1973-09-12 1977-08-09 Kasper Instruments, Inc. Step-and-repeat projection alignment and exposure system
DE2448741A1 (de) * 1974-10-12 1976-04-22 Licentia Gmbh Verfahren zum herstellen eines leuchtschirmes fuer eine farbbildkathodenstrahlroehre
US4024428A (en) * 1975-05-19 1977-05-17 Optical Associates, Incorporated Radiation-sensitive control circuit for driving lamp at various power levels
DE2718735C2 (de) * 1977-04-27 1986-06-05 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH, 8000 München Quecksilberdampfhochdruckentladung
JPS5486979A (en) * 1977-12-23 1979-07-10 Ushio Electric Inc Discharge lamp
GB2014335B (en) * 1978-02-14 1982-06-03 Kasper Instruments Apparatus for prolonging lamp life by minimizing power requirement levels
JPS5676157A (en) 1979-11-28 1981-06-23 Ushio Inc Mercury rare gas discharge lamp
US4532427A (en) * 1982-03-29 1985-07-30 Fusion Systems Corp. Method and apparatus for performing deep UV photolithography
JPS59222833A (ja) * 1983-06-01 1984-12-14 Hitachi Chem Co Ltd 感光性組成物
JP3240632B2 (ja) * 1991-07-16 2001-12-17 ミノルタ株式会社 ファクシミリ通信方法

Also Published As

Publication number Publication date
DE3527855A1 (de) 1986-08-21
GB2171214B (en) 1988-12-29
GB2171214A (en) 1986-08-20
FR2577695A1 (fr) 1986-08-22
GB8519449D0 (en) 1985-09-11
FR2577695B1 (fr) 1991-06-21
US4732842A (en) 1988-03-22
JPS61189636A (ja) 1986-08-23
NL8600303A (nl) 1986-09-16

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