JPH0254654B2 - - Google Patents

Info

Publication number
JPH0254654B2
JPH0254654B2 JP59139775A JP13977584A JPH0254654B2 JP H0254654 B2 JPH0254654 B2 JP H0254654B2 JP 59139775 A JP59139775 A JP 59139775A JP 13977584 A JP13977584 A JP 13977584A JP H0254654 B2 JPH0254654 B2 JP H0254654B2
Authority
JP
Japan
Prior art keywords
mercury lamp
exposure
semiconductor wafer
power consumption
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59139775A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6120324A (ja
Inventor
Takehiro Kira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP59139775A priority Critical patent/JPS6120324A/ja
Priority to US06/705,646 priority patent/US4605301A/en
Priority to FR8502942A priority patent/FR2567280B1/fr
Priority to GB8506123A priority patent/GB2161284B/en
Priority to DE3510478A priority patent/DE3510478C2/de
Priority to NLAANVRAGE8501933,A priority patent/NL190495C/xx
Publication of JPS6120324A publication Critical patent/JPS6120324A/ja
Priority to GB888808723A priority patent/GB8808723D0/en
Priority to GB8810523A priority patent/GB2203849B/en
Publication of JPH0254654B2 publication Critical patent/JPH0254654B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Discharge-Lamp Control Circuits And Pulse- Feed Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59139775A 1984-07-07 1984-07-07 水銀灯による半導体ウエハ−材料の露光方法 Granted JPS6120324A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP59139775A JPS6120324A (ja) 1984-07-07 1984-07-07 水銀灯による半導体ウエハ−材料の露光方法
US06/705,646 US4605301A (en) 1984-07-07 1985-02-26 Exposure method of semiconductor wafer by mercury-vapor lamp
FR8502942A FR2567280B1 (fr) 1984-07-07 1985-02-28 Procede d'exposition d'une pastille de semi-conducteur par une lampe a vapeur de mercure
GB8506123A GB2161284B (en) 1984-07-07 1985-03-08 Method of exposing a semiconductor wafer to light from a mercury-vapor lamp
DE3510478A DE3510478C2 (de) 1984-07-07 1985-03-22 Verfahren zur aufeinanderfolgenden Belichtung kleiner Abschnitte eines Halbleiterwafers
NLAANVRAGE8501933,A NL190495C (nl) 1984-07-07 1985-07-05 Belichtingsstelsel voor het achtereenvolgens belichten van halfgeleiderplakken.
GB888808723A GB8808723D0 (en) 1984-07-07 1988-04-13 Method of exposing semiconductor wafer to light from mercury-vapour lamp
GB8810523A GB2203849B (en) 1984-07-07 1988-05-04 Method of exposing a semiconductor wafer to light from a mercury-vapor lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59139775A JPS6120324A (ja) 1984-07-07 1984-07-07 水銀灯による半導体ウエハ−材料の露光方法

Publications (2)

Publication Number Publication Date
JPS6120324A JPS6120324A (ja) 1986-01-29
JPH0254654B2 true JPH0254654B2 (cg-RX-API-DMAC7.html) 1990-11-22

Family

ID=15253123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59139775A Granted JPS6120324A (ja) 1984-07-07 1984-07-07 水銀灯による半導体ウエハ−材料の露光方法

Country Status (2)

Country Link
JP (1) JPS6120324A (cg-RX-API-DMAC7.html)
GB (2) GB8808723D0 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0679107B2 (ja) * 1986-07-04 1994-10-05 オリンパス光学工業株式会社 電子スコ−プ用光源装置
JPH0679108B2 (ja) * 1988-07-28 1994-10-05 オリンパス光学工業株式会社 電子スコープ用光源装置
JPH0679109B2 (ja) * 1988-07-28 1994-10-05 オリンパス光学工業株式会社 電子スコープ用光源装置
DE4402611A1 (de) * 1994-01-28 1995-08-10 Wack O K Chemie Gmbh Waschanlage für Motorräder
JP4897397B2 (ja) * 2005-12-27 2012-03-14 ハリソン東芝ライティング株式会社 紫外線照射装置
JP2008281934A (ja) * 2007-05-14 2008-11-20 Harison Toshiba Lighting Corp 紫外線照射装置
JP5736989B2 (ja) * 2011-06-15 2015-06-17 ウシオ電機株式会社 光源装置およびランプ点灯方法
JP2022167503A (ja) * 2021-04-23 2022-11-04 株式会社ブイ・テクノロジー 照明装置の制御方法及び露光装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54108478A (en) * 1978-02-14 1979-08-25 Ushio Electric Inc Printing or transcribing method of semiconductor and discharge lamp suitable for printing or transcription

Also Published As

Publication number Publication date
JPS6120324A (ja) 1986-01-29
GB8810523D0 (en) 1988-06-08
GB2203849B (en) 1989-05-24
GB8808723D0 (en) 1988-05-18
GB2203849A (en) 1988-10-26

Similar Documents

Publication Publication Date Title
US4732842A (en) Exposure method of semiconductor wafer by rare gas-mercury discharge lamp
US4532427A (en) Method and apparatus for performing deep UV photolithography
JPH0254654B2 (cg-RX-API-DMAC7.html)
JPH0260051B2 (cg-RX-API-DMAC7.html)
JPH0254653B2 (cg-RX-API-DMAC7.html)
JPS6120325A (ja) 水銀灯による半導体ウエハ−材料の露光方法
JPS6146023A (ja) 超高圧水銀灯による半導体ウエハ−材料の露光方法
US4704346A (en) Process for the exposure of semiconductor wafer
US4605301A (en) Exposure method of semiconductor wafer by mercury-vapor lamp
JPS6120322A (ja) 水銀灯による半導体ウエハ−材料の露光方法
JP4202962B2 (ja) 基板処理方法及び半導体装置の製造方法
JPS6120327A (ja) 超高圧水銀灯による半導体ウエハ−材料の露光方法
JPS6254440A (ja) 半導体ウエハの露光方法
JP2005203597A (ja) レジスト現像方法および装置
JPS6254439A (ja) 半導体ウエハの露光方法
SU871232A1 (ru) Способ подгонки пленочных резисторов
JPS62115717A (ja) 処理装置
JPH0239419A (ja) 半導体装置の製造方法
JPH0777190B2 (ja) レジストパタ−ン耐性向上方法
JP2615687B2 (ja) エキシマレーザ縮小投影露光方法
JPS6120328A (ja) 超高圧水銀灯による半導体ウエハ−材料の露光方法
JPH0653114A (ja) 縮小投影露光装置
JPS6459918A (en) Lift-off flattening process
KR20020054658A (ko) E-빔 노광방법
JPH03156914A (ja) 図形露光装置とその方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees