JPH0314907B2 - - Google Patents
Info
- Publication number
- JPH0314907B2 JPH0314907B2 JP56123278A JP12327881A JPH0314907B2 JP H0314907 B2 JPH0314907 B2 JP H0314907B2 JP 56123278 A JP56123278 A JP 56123278A JP 12327881 A JP12327881 A JP 12327881A JP H0314907 B2 JPH0314907 B2 JP H0314907B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate electrode
- sputtering
- electrode
- substrate
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12327881A JPS5825475A (ja) | 1981-08-05 | 1981-08-05 | スパツタ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12327881A JPS5825475A (ja) | 1981-08-05 | 1981-08-05 | スパツタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5825475A JPS5825475A (ja) | 1983-02-15 |
JPH0314907B2 true JPH0314907B2 (enrdf_load_stackoverflow) | 1991-02-27 |
Family
ID=14856602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12327881A Granted JPS5825475A (ja) | 1981-08-05 | 1981-08-05 | スパツタ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5825475A (enrdf_load_stackoverflow) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59170270A (ja) * | 1983-03-15 | 1984-09-26 | Toshiba Corp | 膜形成装置 |
JPS60136230A (ja) * | 1983-12-24 | 1985-07-19 | Ulvac Corp | 基板表面の整形装置 |
JPS6187868A (ja) * | 1984-10-05 | 1986-05-06 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成方法および装置 |
JPS61137326A (ja) * | 1984-12-10 | 1986-06-25 | Ulvac Corp | 基板表面の整形装置 |
JPS62107064A (ja) * | 1985-11-05 | 1987-05-18 | Anelva Corp | バイアススパツタ装置 |
JPS63265493A (ja) * | 1987-04-23 | 1988-11-01 | Fujitsu Ltd | 多層セラミツク基板 |
US4812217A (en) * | 1987-04-27 | 1989-03-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method and apparatus for feeding and coating articles in a controlled atmosphere |
JP2000315598A (ja) * | 1999-03-03 | 2000-11-14 | Anelva Corp | プラズマ処理装置 |
JP2004501302A (ja) * | 2000-06-19 | 2004-01-15 | 日本板硝子株式会社 | 車両用窓ガラスの保持装置 |
US6677711B2 (en) * | 2001-06-07 | 2004-01-13 | Lam Research Corporation | Plasma processor method and apparatus |
JP4643387B2 (ja) * | 2005-08-10 | 2011-03-02 | シャープ株式会社 | プラズマ処理装置 |
JP4876641B2 (ja) * | 2006-03-09 | 2012-02-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57207177A (en) * | 1981-06-17 | 1982-12-18 | Hitachi Ltd | Dc sputtering device |
-
1981
- 1981-08-05 JP JP12327881A patent/JPS5825475A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5825475A (ja) | 1983-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4131533A (en) | RF sputtering apparatus having floating anode shield | |
US6679981B1 (en) | Inductive plasma loop enhancing magnetron sputtering | |
JP4553992B2 (ja) | プラズマの発生及びスパッタのためのコイル | |
JP3516054B2 (ja) | 陰極スパッタリングによってプラズマを発生させるための装置 | |
JP4852189B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
US5232571A (en) | Aluminum nitride deposition using an AlN/Al sputter cycle technique | |
US10266940B2 (en) | Auto capacitance tuner current compensation to control one or more film properties through target life | |
KR0137323B1 (ko) | 고주파 마그네트론 플라즈마 장치 | |
JPH07188917A (ja) | コリメーション装置 | |
JPH02298024A (ja) | リアクティブイオンエッチング装置 | |
JP3499104B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP4945566B2 (ja) | 容量結合型磁気中性線プラズマスパッタ装置 | |
JPH0314907B2 (enrdf_load_stackoverflow) | ||
US6153068A (en) | Parallel plate sputtering device with RF powered auxiliary electrodes and applied external magnetic field | |
JP4013674B2 (ja) | プラズマドーピング方法及び装置 | |
JP3238200B2 (ja) | 基体処理装置及び半導体素子製造方法 | |
JP3663392B2 (ja) | プラズマエッチング処理装置 | |
JP3704894B2 (ja) | プラズマ処理方法及び装置 | |
JP3037587B2 (ja) | スパッタリング装置 | |
JP3220528B2 (ja) | 真空処理装置 | |
JP2003077903A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP2877398B2 (ja) | ドライエッチング装置 | |
JPH0715900B2 (ja) | ドライプロセス装置 | |
JP3830634B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP3455616B2 (ja) | エッチング装置 |