JPH03139824A - 半導体薄膜の堆積方法 - Google Patents
半導体薄膜の堆積方法Info
- Publication number
- JPH03139824A JPH03139824A JP27793889A JP27793889A JPH03139824A JP H03139824 A JPH03139824 A JP H03139824A JP 27793889 A JP27793889 A JP 27793889A JP 27793889 A JP27793889 A JP 27793889A JP H03139824 A JPH03139824 A JP H03139824A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- thin film
- substrate
- film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 60
- 239000001257 hydrogen Substances 0.000 claims abstract description 60
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000007789 gas Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 239000012159 carrier gas Substances 0.000 claims abstract description 7
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 239000002994 raw material Substances 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 23
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010453 quartz Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910007264 Si2H6 Inorganic materials 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 108010074864 Factor XI Proteins 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27793889A JPH03139824A (ja) | 1989-10-25 | 1989-10-25 | 半導体薄膜の堆積方法 |
| US07/800,711 US5214002A (en) | 1989-10-25 | 1991-12-03 | Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27793889A JPH03139824A (ja) | 1989-10-25 | 1989-10-25 | 半導体薄膜の堆積方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09125182A Division JP3084395B2 (ja) | 1997-05-15 | 1997-05-15 | 半導体薄膜の堆積方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03139824A true JPH03139824A (ja) | 1991-06-14 |
| JPH0587171B2 JPH0587171B2 (enExample) | 1993-12-15 |
Family
ID=17590376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27793889A Granted JPH03139824A (ja) | 1989-10-25 | 1989-10-25 | 半導体薄膜の堆積方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03139824A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993010555A1 (fr) * | 1991-11-14 | 1993-05-27 | Kanegafuchi Chemical Industry Co., Ltd. | Couche mince en silicium polycristallin et son procede de formation a basse temperature |
| JPH0897159A (ja) * | 1994-09-29 | 1996-04-12 | Handotai Process Kenkyusho:Kk | エピタキシャル成長方法および成長装置 |
| US5624873A (en) * | 1993-11-12 | 1997-04-29 | The Penn State Research Foundation | Enhanced crystallization of amorphous films |
| KR20000048288A (ko) * | 1998-12-22 | 2000-07-25 | 마찌다 가쯔히꼬 | 결정성실리콘계 반도체박막의 제조방법 |
| US6773762B1 (en) | 1997-11-20 | 2004-08-10 | Tokyo Electron Limited | Plasma treatment method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4866534B2 (ja) | 2001-02-12 | 2012-02-01 | エーエスエム アメリカ インコーポレイテッド | 半導体膜の改良された堆積方法 |
| US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118122A (ja) * | 1984-07-04 | 1986-01-27 | Hitachi Ltd | 半導体製造装置 |
| JPS6126774A (ja) * | 1984-07-16 | 1986-02-06 | Canon Inc | 非晶質シリコン膜形成装置 |
| JPS61151092A (ja) * | 1984-12-24 | 1986-07-09 | Hitachi Ltd | 薄膜形成方法及び薄膜形成装置 |
| JPS62213118A (ja) * | 1986-03-13 | 1987-09-19 | Nec Corp | 薄膜形成方法およびその装置 |
| JPH01238112A (ja) * | 1988-03-18 | 1989-09-22 | Sanyo Electric Co Ltd | 半導体処理方法 |
-
1989
- 1989-10-25 JP JP27793889A patent/JPH03139824A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118122A (ja) * | 1984-07-04 | 1986-01-27 | Hitachi Ltd | 半導体製造装置 |
| JPS6126774A (ja) * | 1984-07-16 | 1986-02-06 | Canon Inc | 非晶質シリコン膜形成装置 |
| JPS61151092A (ja) * | 1984-12-24 | 1986-07-09 | Hitachi Ltd | 薄膜形成方法及び薄膜形成装置 |
| JPS62213118A (ja) * | 1986-03-13 | 1987-09-19 | Nec Corp | 薄膜形成方法およびその装置 |
| JPH01238112A (ja) * | 1988-03-18 | 1989-09-22 | Sanyo Electric Co Ltd | 半導体処理方法 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993010555A1 (fr) * | 1991-11-14 | 1993-05-27 | Kanegafuchi Chemical Industry Co., Ltd. | Couche mince en silicium polycristallin et son procede de formation a basse temperature |
| US5387542A (en) * | 1991-11-14 | 1995-02-07 | Kanegafuchi Chemical Industry Co., Ltd. | Polycrystalline silicon thin film and low temperature fabrication method thereof |
| US5624873A (en) * | 1993-11-12 | 1997-04-29 | The Penn State Research Foundation | Enhanced crystallization of amorphous films |
| JPH0897159A (ja) * | 1994-09-29 | 1996-04-12 | Handotai Process Kenkyusho:Kk | エピタキシャル成長方法および成長装置 |
| US5769942A (en) * | 1994-09-29 | 1998-06-23 | Semiconductor Process Laboratory Co. | Method for epitaxial growth |
| US6110290A (en) * | 1994-09-29 | 2000-08-29 | Semiconductor Process Laboratory Co. | Method for epitaxial growth and apparatus for epitaxial growth |
| US6773762B1 (en) | 1997-11-20 | 2004-08-10 | Tokyo Electron Limited | Plasma treatment method |
| KR20000048288A (ko) * | 1998-12-22 | 2000-07-25 | 마찌다 가쯔히꼬 | 결정성실리콘계 반도체박막의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0587171B2 (enExample) | 1993-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5214002A (en) | Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step | |
| JPS61127121A (ja) | 薄膜形成方法 | |
| JPH03139824A (ja) | 半導体薄膜の堆積方法 | |
| JPS60117711A (ja) | 薄膜形成装置 | |
| JPS60117712A (ja) | 薄膜形成方法 | |
| JP3084395B2 (ja) | 半導体薄膜の堆積方法 | |
| US4741919A (en) | Process for preparation of semiconductor device | |
| JPH05144741A (ja) | アモルフアスシリコン膜の形成方法 | |
| JPH07221026A (ja) | 高品質半導体薄膜の形成方法 | |
| JPS634454B2 (enExample) | ||
| JPS63317675A (ja) | プラズマ気相成長装置 | |
| JPH04342121A (ja) | 水素化非晶質シリコン薄膜の製造方法 | |
| JPH02259076A (ja) | 堆積膜形成方法 | |
| JPS59215731A (ja) | 酸化珪素被膜作製方法 | |
| JP3040247B2 (ja) | シリコン薄膜の製造法 | |
| JPH0682616B2 (ja) | 堆積膜形成方法 | |
| JPS6126773A (ja) | 堆積膜形成方法 | |
| JP2654456B2 (ja) | 高品質ｉｇｆｅｔの作製方法 | |
| JPS62180074A (ja) | プラズマｃｖｄ法による堆積膜形成方法 | |
| JPS61230325A (ja) | 気相成長装置 | |
| Sawado et al. | Contributions of Silicon-Hydride Radicals to Hydrogenated Amorphous Silicon Film Formation in Windowless Photochemical Vapor Deposition System | |
| JPS60211847A (ja) | 絶縁膜の形成方法 | |
| JPH03229871A (ja) | 絶縁膜の製造方法及びこの絶縁膜を使用する半導体装置の製造方法 | |
| JPS6343313A (ja) | 非晶質半導体薄膜の製造方法 | |
| JPS61156723A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |