JPH0313745B2 - - Google Patents
Info
- Publication number
- JPH0313745B2 JPH0313745B2 JP57172027A JP17202782A JPH0313745B2 JP H0313745 B2 JPH0313745 B2 JP H0313745B2 JP 57172027 A JP57172027 A JP 57172027A JP 17202782 A JP17202782 A JP 17202782A JP H0313745 B2 JPH0313745 B2 JP H0313745B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- mask
- mask film
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57172027A JPS5961181A (ja) | 1982-09-30 | 1982-09-30 | 半導体装置の製造方法 |
US06/537,017 US4545114A (en) | 1982-09-30 | 1983-09-29 | Method of producing semiconductor device |
DE8383305971T DE3380615D1 (en) | 1982-09-30 | 1983-09-30 | Method of producing semiconductor device |
EP83305971A EP0107416B1 (en) | 1982-09-30 | 1983-09-30 | Method of producing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57172027A JPS5961181A (ja) | 1982-09-30 | 1982-09-30 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5961181A JPS5961181A (ja) | 1984-04-07 |
JPH0313745B2 true JPH0313745B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-02-25 |
Family
ID=15934161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57172027A Granted JPS5961181A (ja) | 1982-09-30 | 1982-09-30 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5961181A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60216581A (ja) * | 1984-04-12 | 1985-10-30 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS60216580A (ja) * | 1984-04-12 | 1985-10-30 | Fujitsu Ltd | 半導体装置の製造方法 |
CA1279410C (en) * | 1986-06-06 | 1991-01-22 | Anatoly Feygenson | Submicron bipolar transistor with buried silicide region |
TWI650202B (zh) * | 2017-08-22 | 2019-02-11 | 智勝科技股份有限公司 | 研磨墊、研磨墊的製造方法及研磨方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54155778A (en) * | 1978-05-30 | 1979-12-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS6028146B2 (ja) * | 1979-12-12 | 1985-07-03 | 株式会社日立製作所 | 半導体装置の製造方法 |
-
1982
- 1982-09-30 JP JP57172027A patent/JPS5961181A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5961181A (ja) | 1984-04-07 |