JPH0310939B2 - - Google Patents
Info
- Publication number
- JPH0310939B2 JPH0310939B2 JP60183257A JP18325785A JPH0310939B2 JP H0310939 B2 JPH0310939 B2 JP H0310939B2 JP 60183257 A JP60183257 A JP 60183257A JP 18325785 A JP18325785 A JP 18325785A JP H0310939 B2 JPH0310939 B2 JP H0310939B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- alloy
- photoconductive material
- photoconductive
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 56
- 229910045601 alloy Inorganic materials 0.000 claims description 54
- 239000000956 alloy Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 16
- 238000000354 decomposition reaction Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000013081 microcrystal Substances 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 47
- 239000010408 film Substances 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 230000037230 mobility Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000006399 behavior Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000878 H alloy Inorganic materials 0.000 description 1
- -1 ITO Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08264—Silicon-based comprising seven or more silicon-based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60183257A JPS6243653A (ja) | 1985-08-21 | 1985-08-21 | 光導電材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60183257A JPS6243653A (ja) | 1985-08-21 | 1985-08-21 | 光導電材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6243653A JPS6243653A (ja) | 1987-02-25 |
| JPH0310939B2 true JPH0310939B2 (enrdf_load_stackoverflow) | 1991-02-14 |
Family
ID=16132502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60183257A Granted JPS6243653A (ja) | 1985-08-21 | 1985-08-21 | 光導電材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6243653A (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0772803B2 (ja) * | 1986-01-10 | 1995-08-02 | 株式会社東芝 | 電子写真感光体 |
| JPS6364054A (ja) * | 1986-09-05 | 1988-03-22 | Sanyo Electric Co Ltd | 静電潜像担持体 |
| JP2528281B2 (ja) * | 1986-06-23 | 1996-08-28 | キヤノン株式会社 | 超薄膜積層構造層を有する光受容部材 |
| JP2524116B2 (ja) * | 1986-06-23 | 1996-08-14 | キヤノン株式会社 | 超薄膜積層構造を有する光受容部材 |
| JPH0785172B2 (ja) * | 1986-06-23 | 1995-09-13 | キヤノン株式会社 | 超薄膜積層構造を有する光受容部材 |
| JP2572574B2 (ja) * | 1986-06-23 | 1997-01-16 | キヤノン株式会社 | 超薄膜積層構造層を有する光受容部材 |
| JP2524117B2 (ja) * | 1986-06-23 | 1996-08-14 | キヤノン株式会社 | 超薄膜積層構造を有する光受容部材 |
| JP2528283B2 (ja) * | 1986-06-23 | 1996-08-28 | キヤノン株式会社 | 超薄膜積層構造を有する光受容部材 |
| JP2528282B2 (ja) * | 1986-06-23 | 1996-08-28 | キヤノン株式会社 | 超薄膜積層構造を有する光受容部材 |
| JPH0785177B2 (ja) * | 1986-06-23 | 1995-09-13 | キヤノン株式会社 | 超薄膜積層構造を有する光受容部材 |
| JP2528280B2 (ja) * | 1986-06-23 | 1996-08-28 | キヤノン株式会社 | 超薄膜積層構造層を有する光受容部材 |
| JPH0785170B2 (ja) * | 1986-06-23 | 1995-09-13 | キヤノン株式会社 | 超薄膜積層構造を有する光受容部材 |
| JP2803796B2 (ja) * | 1987-03-05 | 1998-09-24 | 株式会社イシダ | 荷重センサ |
-
1985
- 1985-08-21 JP JP60183257A patent/JPS6243653A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6243653A (ja) | 1987-02-25 |
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