JPH028450B2 - - Google Patents

Info

Publication number
JPH028450B2
JPH028450B2 JP58119507A JP11950783A JPH028450B2 JP H028450 B2 JPH028450 B2 JP H028450B2 JP 58119507 A JP58119507 A JP 58119507A JP 11950783 A JP11950783 A JP 11950783A JP H028450 B2 JPH028450 B2 JP H028450B2
Authority
JP
Japan
Prior art keywords
layer
gaas
substrate
algaas
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58119507A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6012773A (ja
Inventor
Seiji Nishi
Haruhisa Kinoshita
Masahiro Akyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58119507A priority Critical patent/JPS6012773A/ja
Publication of JPS6012773A publication Critical patent/JPS6012773A/ja
Publication of JPH028450B2 publication Critical patent/JPH028450B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP58119507A 1983-07-02 1983-07-02 半導体素子の製造方法 Granted JPS6012773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119507A JPS6012773A (ja) 1983-07-02 1983-07-02 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119507A JPS6012773A (ja) 1983-07-02 1983-07-02 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6012773A JPS6012773A (ja) 1985-01-23
JPH028450B2 true JPH028450B2 (enrdf_load_stackoverflow) 1990-02-23

Family

ID=14762969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119507A Granted JPS6012773A (ja) 1983-07-02 1983-07-02 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6012773A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2921835B2 (ja) * 1988-02-04 1999-07-19 松下電器産業株式会社 ヘテロ接合型電界効果トランジスタ
JP2650411B2 (ja) * 1989-04-17 1997-09-03 日立電線株式会社 電界効果トランジスタ
JPH081955B2 (ja) * 1991-08-21 1996-01-10 ヒューズ・エアクラフト・カンパニー 反転変調ドープされたヘテロ構造の製造方法
JP3301357B2 (ja) * 1997-08-26 2002-07-15 株式会社村田製作所 平行平板型プラズマｃｖｄ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946414B2 (ja) * 1980-09-16 1984-11-12 沖電気工業株式会社 化合物半導体装置
JPS5913376A (ja) * 1982-07-13 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合を有する半導体薄膜
JPS59106158A (ja) * 1982-12-10 1984-06-19 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6012773A (ja) 1985-01-23

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