JPH0253944B2 - - Google Patents

Info

Publication number
JPH0253944B2
JPH0253944B2 JP57006188A JP618882A JPH0253944B2 JP H0253944 B2 JPH0253944 B2 JP H0253944B2 JP 57006188 A JP57006188 A JP 57006188A JP 618882 A JP618882 A JP 618882A JP H0253944 B2 JPH0253944 B2 JP H0253944B2
Authority
JP
Japan
Prior art keywords
layer
studs
silicon
region
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57006188A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57170546A (en
Inventor
Richaado Gosu Jooji
Daaru Marabya Shan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS57170546A publication Critical patent/JPS57170546A/ja
Publication of JPH0253944B2 publication Critical patent/JPH0253944B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/063—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
    • C08G12/26—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds
    • C08G12/34—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds and acyclic or carbocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
    • C08G12/40—Chemically modified polycondensates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10P50/695—
    • H10W10/012—
    • H10W10/13—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57006188A 1981-03-30 1982-01-20 Semiconductor element Granted JPS57170546A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/248,918 US4508579A (en) 1981-03-30 1981-03-30 Lateral device structures using self-aligned fabrication techniques

Publications (2)

Publication Number Publication Date
JPS57170546A JPS57170546A (en) 1982-10-20
JPH0253944B2 true JPH0253944B2 (cg-RX-API-DMAC10.html) 1990-11-20

Family

ID=22941252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57006188A Granted JPS57170546A (en) 1981-03-30 1982-01-20 Semiconductor element

Country Status (4)

Country Link
US (1) US4508579A (cg-RX-API-DMAC10.html)
EP (1) EP0061729B1 (cg-RX-API-DMAC10.html)
JP (1) JPS57170546A (cg-RX-API-DMAC10.html)
DE (1) DE3279910D1 (cg-RX-API-DMAC10.html)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4691219A (en) * 1980-07-08 1987-09-01 International Business Machines Corporation Self-aligned polysilicon base contact structure
US4743565A (en) * 1981-03-30 1988-05-10 International Business Machines Corporation Lateral device structures using self-aligned fabrication techniques
DE3242113A1 (de) * 1982-11-13 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper
US4464212A (en) * 1982-12-13 1984-08-07 International Business Machines Corporation Method for making high sheet resistivity resistors
JPH0618198B2 (ja) * 1984-02-15 1994-03-09 株式会社日立製作所 半導体装置
JPS61191043A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 半導体装置
US4764799A (en) * 1985-05-28 1988-08-16 International Business Machines Corporation Stud-defined integrated circuit structure
US4648173A (en) * 1985-05-28 1987-03-10 International Business Machines Corporation Fabrication of stud-defined integrated circuit structure
JPS61290764A (ja) * 1985-06-19 1986-12-20 Sanyo Electric Co Ltd ラテラルｎｐｎトランジスタ
US5063168A (en) * 1986-07-02 1991-11-05 National Semiconductor Corporation Process for making bipolar transistor with polysilicon stringer base contact
GB2198393B (en) * 1986-12-13 1990-06-06 Spectrol Reliance Ltd Method of producing filaments
US4738624A (en) * 1987-04-13 1988-04-19 International Business Machines Corporation Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor
US4916083A (en) * 1987-05-11 1990-04-10 International Business Machines Corporation High performance sidewall emitter transistor
US4897703A (en) * 1988-01-29 1990-01-30 Texas Instruments Incorporated Recessed contact bipolar transistor and method
US5146304A (en) * 1988-12-22 1992-09-08 Honeywell Inc. Self-aligned semiconductor device
US5061644A (en) * 1988-12-22 1991-10-29 Honeywell Inc. Method for fabricating self-aligned semiconductor devices
US5234861A (en) * 1989-06-30 1993-08-10 Honeywell Inc. Method for forming variable width isolation structures
US5017999A (en) * 1989-06-30 1991-05-21 Honeywell Inc. Method for forming variable width isolation structures
US5171702A (en) * 1989-07-21 1992-12-15 Texas Instruments Incorporated Method for forming a thick base oxide in a BiCMOS process
US5258477A (en) * 1989-09-22 1993-11-02 National Starch And Chemical Investment Holding Corporation Monomers and polymers containing acetal and aldehyde groups
US5118634A (en) * 1990-09-26 1992-06-02 Purdue Research Foundation Self-aligned integrated circuit bipolar transistor having monocrystalline contacts
WO2002056358A2 (en) * 2000-11-13 2002-07-18 Vram Technologies Llc Sidewalls as semiconductor etch stop and diffusion barrier
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
US6624478B2 (en) * 2002-01-30 2003-09-23 International Business Machines Corporation High mobility transistors in SOI and method for forming
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
KR100843244B1 (ko) * 2007-04-19 2008-07-02 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7151040B2 (en) 2004-08-31 2006-12-19 Micron Technology, Inc. Methods for increasing photo alignment margins
US7910288B2 (en) 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US7655387B2 (en) * 2004-09-02 2010-02-02 Micron Technology, Inc. Method to align mask patterns
US7115525B2 (en) * 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
JP2006186562A (ja) * 2004-12-27 2006-07-13 Sanyo Electric Co Ltd ビデオ信号処理装置
US7253118B2 (en) * 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
US7390746B2 (en) 2005-03-15 2008-06-24 Micron Technology, Inc. Multiple deposition for integration of spacers in pitch multiplication process
US7611944B2 (en) 2005-03-28 2009-11-03 Micron Technology, Inc. Integrated circuit fabrication
US7371627B1 (en) * 2005-05-13 2008-05-13 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US7120046B1 (en) * 2005-05-13 2006-10-10 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
US7429536B2 (en) 2005-05-23 2008-09-30 Micron Technology, Inc. Methods for forming arrays of small, closely spaced features
US7560390B2 (en) 2005-06-02 2009-07-14 Micron Technology, Inc. Multiple spacer steps for pitch multiplication
US7396781B2 (en) * 2005-06-09 2008-07-08 Micron Technology, Inc. Method and apparatus for adjusting feature size and position
US7541632B2 (en) * 2005-06-14 2009-06-02 Micron Technology, Inc. Relaxed-pitch method of aligning active area to digit line
US7888721B2 (en) 2005-07-06 2011-02-15 Micron Technology, Inc. Surround gate access transistors with grown ultra-thin bodies
US7768051B2 (en) 2005-07-25 2010-08-03 Micron Technology, Inc. DRAM including a vertical surround gate transistor
US7413981B2 (en) * 2005-07-29 2008-08-19 Micron Technology, Inc. Pitch doubled circuit layout
US8123968B2 (en) * 2005-08-25 2012-02-28 Round Rock Research, Llc Multiple deposition for integration of spacers in pitch multiplication process
US7816262B2 (en) 2005-08-30 2010-10-19 Micron Technology, Inc. Method and algorithm for random half pitched interconnect layout with constant spacing
US7829262B2 (en) 2005-08-31 2010-11-09 Micron Technology, Inc. Method of forming pitch multipled contacts
US7416943B2 (en) * 2005-09-01 2008-08-26 Micron Technology, Inc. Peripheral gate stacks and recessed array gates
US7393789B2 (en) * 2005-09-01 2008-07-01 Micron Technology, Inc. Protective coating for planarization
US7687342B2 (en) * 2005-09-01 2010-03-30 Micron Technology, Inc. Method of manufacturing a memory device
US7557032B2 (en) * 2005-09-01 2009-07-07 Micron Technology, Inc. Silicided recessed silicon
US7572572B2 (en) 2005-09-01 2009-08-11 Micron Technology, Inc. Methods for forming arrays of small, closely spaced features
US7776744B2 (en) * 2005-09-01 2010-08-17 Micron Technology, Inc. Pitch multiplication spacers and methods of forming the same
US7759197B2 (en) * 2005-09-01 2010-07-20 Micron Technology, Inc. Method of forming isolated features using pitch multiplication
US7538858B2 (en) * 2006-01-11 2009-05-26 Micron Technology, Inc. Photolithographic systems and methods for producing sub-diffraction-limited features
US7842558B2 (en) * 2006-03-02 2010-11-30 Micron Technology, Inc. Masking process for simultaneously patterning separate regions
US7476933B2 (en) * 2006-03-02 2009-01-13 Micron Technology, Inc. Vertical gated access transistor
US7902074B2 (en) * 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US8003310B2 (en) * 2006-04-24 2011-08-23 Micron Technology, Inc. Masking techniques and templates for dense semiconductor fabrication
US7488685B2 (en) 2006-04-25 2009-02-10 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
US7795149B2 (en) * 2006-06-01 2010-09-14 Micron Technology, Inc. Masking techniques and contact imprint reticles for dense semiconductor fabrication
US7723009B2 (en) 2006-06-02 2010-05-25 Micron Technology, Inc. Topography based patterning
US7611980B2 (en) * 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US7666578B2 (en) * 2006-09-14 2010-02-23 Micron Technology, Inc. Efficient pitch multiplication process
US8129289B2 (en) * 2006-10-05 2012-03-06 Micron Technology, Inc. Method to deposit conformal low temperature SiO2
US7923373B2 (en) * 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US8563229B2 (en) * 2007-07-31 2013-10-22 Micron Technology, Inc. Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures
US7737039B2 (en) 2007-11-01 2010-06-15 Micron Technology, Inc. Spacer process for on pitch contacts and related structures
US7659208B2 (en) 2007-12-06 2010-02-09 Micron Technology, Inc Method for forming high density patterns
US7790531B2 (en) * 2007-12-18 2010-09-07 Micron Technology, Inc. Methods for isolating portions of a loop of pitch-multiplied material and related structures
US8030218B2 (en) 2008-03-21 2011-10-04 Micron Technology, Inc. Method for selectively modifying spacing between pitch multiplied structures
US8076208B2 (en) 2008-07-03 2011-12-13 Micron Technology, Inc. Method for forming transistor with high breakdown voltage using pitch multiplication technique
US8101497B2 (en) 2008-09-11 2012-01-24 Micron Technology, Inc. Self-aligned trench formation
US8492282B2 (en) 2008-11-24 2013-07-23 Micron Technology, Inc. Methods of forming a masking pattern for integrated circuits
US8518757B2 (en) * 2010-02-18 2013-08-27 International Business Machines Corporation Method of fabricating strained semiconductor structures from silicon-on-insulator (SOI)
US9406331B1 (en) 2013-06-17 2016-08-02 Western Digital (Fremont), Llc Method for making ultra-narrow read sensor and read transducer device resulting therefrom
US9312064B1 (en) 2015-03-02 2016-04-12 Western Digital (Fremont), Llc Method to fabricate a magnetic head including ion milling of read gap using dual layer hard mask
RU2698574C1 (ru) * 2018-11-28 2019-08-28 Акционерное общество "Научно-исследовательский институт молекулярной электроники" Способ изготовления полупроводниковой структуры, выступающей из монолитного кремниевого тела

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3677837A (en) * 1969-08-06 1972-07-18 Ibm Method of making pedestal transistor having minimal side injection
US3919005A (en) * 1973-05-07 1975-11-11 Fairchild Camera Instr Co Method for fabricating double-diffused, lateral transistor
US3945857A (en) * 1974-07-01 1976-03-23 Fairchild Camera And Instrument Corporation Method for fabricating double-diffused, lateral transistors
US4005451A (en) * 1975-05-05 1977-01-25 Rca Corporation Lateral current device
JPS51145276A (en) * 1975-06-10 1976-12-14 Mitsubishi Electric Corp Semiconductor device
DE2529598C3 (de) * 1975-07-02 1978-05-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren
JPS5244186A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor intergrated circuit device
JPS5253673A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Device and production for semiconductor
JPS53909A (en) * 1976-06-25 1978-01-07 Meisei Electric Co Ltd Abbreviated dialling system
US4054895A (en) * 1976-12-27 1977-10-18 Rca Corporation Silicon-on-sapphire mesa transistor having doped edges
US4099987A (en) * 1977-07-25 1978-07-11 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
US4160991A (en) * 1977-10-25 1979-07-10 International Business Machines Corporation High performance bipolar device and method for making same
US4196440A (en) * 1978-05-25 1980-04-01 International Business Machines Corporation Lateral PNP or NPN with a high gain
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4254428A (en) * 1979-12-28 1981-03-03 International Business Machines Corporation Self-aligned Schottky diode structure and method of fabrication
US4322883A (en) * 1980-07-08 1982-04-06 International Business Machines Corporation Self-aligned metal process for integrated injection logic integrated circuits
US4400865A (en) * 1980-07-08 1983-08-30 International Business Machines Corporation Self-aligned metal process for integrated circuit metallization
US4359816A (en) * 1980-07-08 1982-11-23 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits
US4358340A (en) * 1980-07-14 1982-11-09 Texas Instruments Incorporated Submicron patterning without using submicron lithographic technique
US4415371A (en) * 1980-12-29 1983-11-15 Rockwell International Corporation Method of making sub-micron dimensioned NPN lateral transistor

Also Published As

Publication number Publication date
DE3279910D1 (en) 1989-09-28
EP0061729A3 (en) 1986-08-06
EP0061729B1 (en) 1989-08-23
US4508579A (en) 1985-04-02
EP0061729A2 (en) 1982-10-06
JPS57170546A (en) 1982-10-20

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