JPH0244153B2 - - Google Patents
Info
- Publication number
- JPH0244153B2 JPH0244153B2 JP58031186A JP3118683A JPH0244153B2 JP H0244153 B2 JPH0244153 B2 JP H0244153B2 JP 58031186 A JP58031186 A JP 58031186A JP 3118683 A JP3118683 A JP 3118683A JP H0244153 B2 JPH0244153 B2 JP H0244153B2
- Authority
- JP
- Japan
- Prior art keywords
- latch
- circuit
- diode
- voltage
- diffusion region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
- 
        - H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
 
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP58031186A JPS59155953A (ja) | 1983-02-24 | 1983-02-24 | ラツチアツプ防止回路 | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP58031186A JPS59155953A (ja) | 1983-02-24 | 1983-02-24 | ラツチアツプ防止回路 | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS59155953A JPS59155953A (ja) | 1984-09-05 | 
| JPH0244153B2 true JPH0244153B2 (OSRAM) | 1990-10-02 | 
Family
ID=12324401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP58031186A Granted JPS59155953A (ja) | 1983-02-24 | 1983-02-24 | ラツチアツプ防止回路 | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS59155953A (OSRAM) | 
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS6059770A (ja) * | 1983-09-13 | 1985-04-06 | Nec Corp | 半導体装置 | 
| JP4933871B2 (ja) * | 2006-09-28 | 2012-05-16 | 紀伊産業株式会社 | スクイズ性塗布容器 | 
- 
        1983
        - 1983-02-24 JP JP58031186A patent/JPS59155953A/ja active Granted
 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS59155953A (ja) | 1984-09-05 | 
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