JPH0236059B2 - - Google Patents

Info

Publication number
JPH0236059B2
JPH0236059B2 JP59146012A JP14601284A JPH0236059B2 JP H0236059 B2 JPH0236059 B2 JP H0236059B2 JP 59146012 A JP59146012 A JP 59146012A JP 14601284 A JP14601284 A JP 14601284A JP H0236059 B2 JPH0236059 B2 JP H0236059B2
Authority
JP
Japan
Prior art keywords
temperature
compound semiconductor
buffer layer
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59146012A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6126216A (ja
Inventor
Masahiro Akyama
Yoshihiro Kawarada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59146012A priority Critical patent/JPS6126216A/ja
Publication of JPS6126216A publication Critical patent/JPS6126216A/ja
Publication of JPH0236059B2 publication Critical patent/JPH0236059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3221—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3421—
    • H10P14/3602—
JP59146012A 1984-07-16 1984-07-16 化合物半導体の成長方法 Granted JPS6126216A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59146012A JPS6126216A (ja) 1984-07-16 1984-07-16 化合物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59146012A JPS6126216A (ja) 1984-07-16 1984-07-16 化合物半導体の成長方法

Publications (2)

Publication Number Publication Date
JPS6126216A JPS6126216A (ja) 1986-02-05
JPH0236059B2 true JPH0236059B2 (OSRAM) 1990-08-15

Family

ID=15398094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59146012A Granted JPS6126216A (ja) 1984-07-16 1984-07-16 化合物半導体の成長方法

Country Status (1)

Country Link
JP (1) JPS6126216A (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2563781B2 (ja) * 1986-10-07 1996-12-18 セイコーエプソン株式会社 化合物半導体薄膜の製造方法
JP2743351B2 (ja) * 1986-11-26 1998-04-22 株式会社デンソー 気相エピタキシヤル成長方法
JPH0760790B2 (ja) * 1987-05-13 1995-06-28 シャープ株式会社 化合物半導体基板
FR2637737A1 (fr) * 1988-10-07 1990-04-13 Thomson Hybrides Microondes Transistor de puissance en materiaux iii-v sur substrat silicium, et son procede de fabrication
JP2507888B2 (ja) * 1988-11-19 1996-06-19 工業技術院長 ヘテロ構造体の製造方法
JPH02178916A (ja) * 1988-12-28 1990-07-11 Kyocera Corp 半導体素子の製造方法
JPH02178915A (ja) * 1988-12-28 1990-07-11 Kyocera Corp 半導体素子の製造方法
DE69330845T2 (de) * 1992-03-26 2002-04-04 Canon K.K., Tokio/Tokyo Methoden für das Wachstum von Verbindungshalbleiterschichten
DE69318271T2 (de) * 1992-12-21 1998-12-17 Nippon Steel Corp., Tokio/Tokyo Verfahren zum Wachstum von Verbundhalbleitern auf einer Siliziumscheibe
US5833749A (en) * 1995-01-19 1998-11-10 Nippon Steel Corporation Compound semiconductor substrate and process of producing same

Also Published As

Publication number Publication date
JPS6126216A (ja) 1986-02-05

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term