JPS6126216A - 化合物半導体の成長方法 - Google Patents

化合物半導体の成長方法

Info

Publication number
JPS6126216A
JPS6126216A JP59146012A JP14601284A JPS6126216A JP S6126216 A JPS6126216 A JP S6126216A JP 59146012 A JP59146012 A JP 59146012A JP 14601284 A JP14601284 A JP 14601284A JP S6126216 A JPS6126216 A JP S6126216A
Authority
JP
Japan
Prior art keywords
compound semiconductor
buffer layer
substrate
temperature
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59146012A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0236059B2 (OSRAM
Inventor
Masahiro Akiyama
秋山　正博
Yoshihiro Kawarada
河原田　美裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59146012A priority Critical patent/JPS6126216A/ja
Publication of JPS6126216A publication Critical patent/JPS6126216A/ja
Publication of JPH0236059B2 publication Critical patent/JPH0236059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3221—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3421—
    • H10P14/3602—
JP59146012A 1984-07-16 1984-07-16 化合物半導体の成長方法 Granted JPS6126216A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59146012A JPS6126216A (ja) 1984-07-16 1984-07-16 化合物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59146012A JPS6126216A (ja) 1984-07-16 1984-07-16 化合物半導体の成長方法

Publications (2)

Publication Number Publication Date
JPS6126216A true JPS6126216A (ja) 1986-02-05
JPH0236059B2 JPH0236059B2 (OSRAM) 1990-08-15

Family

ID=15398094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59146012A Granted JPS6126216A (ja) 1984-07-16 1984-07-16 化合物半導体の成長方法

Country Status (1)

Country Link
JP (1) JPS6126216A (OSRAM)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6392015A (ja) * 1986-10-07 1988-04-22 Seiko Epson Corp 化合物半導体薄膜の製造方法
JPS63133616A (ja) * 1986-11-26 1988-06-06 Nippon Denso Co Ltd 気相エピタキシヤル成長方法
JPS6453407A (en) * 1987-05-13 1989-03-01 Sharp Kk Compound semiconductor substrate
FR2637737A1 (fr) * 1988-10-07 1990-04-13 Thomson Hybrides Microondes Transistor de puissance en materiaux iii-v sur substrat silicium, et son procede de fabrication
JPH02139918A (ja) * 1988-11-19 1990-05-29 Agency Of Ind Science & Technol ヘテロ構造体の製造方法
JPH02178916A (ja) * 1988-12-28 1990-07-11 Kyocera Corp 半導体素子の製造方法
JPH02178915A (ja) * 1988-12-28 1990-07-11 Kyocera Corp 半導体素子の製造方法
US5438951A (en) * 1992-12-21 1995-08-08 Nippon Steel Corporation Method of growing compound semiconductor on silicon wafer
EP0723039A2 (en) 1995-01-19 1996-07-24 Nippon Steel Corporation Compound semiconductor substrate and process of producing same
US5571748A (en) * 1992-03-26 1996-11-05 Canon Kabushiki Kaisha Methods for producing compound semiconductor devices

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6392015A (ja) * 1986-10-07 1988-04-22 Seiko Epson Corp 化合物半導体薄膜の製造方法
JPS63133616A (ja) * 1986-11-26 1988-06-06 Nippon Denso Co Ltd 気相エピタキシヤル成長方法
JPS6453407A (en) * 1987-05-13 1989-03-01 Sharp Kk Compound semiconductor substrate
FR2637737A1 (fr) * 1988-10-07 1990-04-13 Thomson Hybrides Microondes Transistor de puissance en materiaux iii-v sur substrat silicium, et son procede de fabrication
JPH02139918A (ja) * 1988-11-19 1990-05-29 Agency Of Ind Science & Technol ヘテロ構造体の製造方法
JPH02178916A (ja) * 1988-12-28 1990-07-11 Kyocera Corp 半導体素子の製造方法
JPH02178915A (ja) * 1988-12-28 1990-07-11 Kyocera Corp 半導体素子の製造方法
US5571748A (en) * 1992-03-26 1996-11-05 Canon Kabushiki Kaisha Methods for producing compound semiconductor devices
EP0564915A3 (en) * 1992-03-26 1997-04-16 Canon Kk Methods for growing compound semiconductor layers
US5438951A (en) * 1992-12-21 1995-08-08 Nippon Steel Corporation Method of growing compound semiconductor on silicon wafer
EP0723039A2 (en) 1995-01-19 1996-07-24 Nippon Steel Corporation Compound semiconductor substrate and process of producing same
US5833749A (en) * 1995-01-19 1998-11-10 Nippon Steel Corporation Compound semiconductor substrate and process of producing same

Also Published As

Publication number Publication date
JPH0236059B2 (OSRAM) 1990-08-15

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Legal Events

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