JPH023308B2 - - Google Patents

Info

Publication number
JPH023308B2
JPH023308B2 JP57030772A JP3077282A JPH023308B2 JP H023308 B2 JPH023308 B2 JP H023308B2 JP 57030772 A JP57030772 A JP 57030772A JP 3077282 A JP3077282 A JP 3077282A JP H023308 B2 JPH023308 B2 JP H023308B2
Authority
JP
Japan
Prior art keywords
nitride film
silicon nitride
film
silicon
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57030772A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58147070A (ja
Inventor
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57030772A priority Critical patent/JPS58147070A/ja
Publication of JPS58147070A publication Critical patent/JPS58147070A/ja
Publication of JPH023308B2 publication Critical patent/JPH023308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Bipolar Transistors (AREA)
JP57030772A 1982-02-25 1982-02-25 電界効果トランジスタの製造方法 Granted JPS58147070A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030772A JPS58147070A (ja) 1982-02-25 1982-02-25 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030772A JPS58147070A (ja) 1982-02-25 1982-02-25 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58147070A JPS58147070A (ja) 1983-09-01
JPH023308B2 true JPH023308B2 (enrdf_load_stackoverflow) 1990-01-23

Family

ID=12312966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030772A Granted JPS58147070A (ja) 1982-02-25 1982-02-25 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58147070A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086805A (ja) * 2001-09-07 2003-03-20 Ricoh Co Ltd 薄膜トランジスタ、電気絶縁膜及びそれらの製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170972A (ja) * 1984-02-15 1985-09-04 Sony Corp 薄膜半導体装置
JPS61105863A (ja) * 1984-10-29 1986-05-23 Seiko Epson Corp 半導体画像記憶素子
JPS6240773A (ja) * 1985-08-17 1987-02-21 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
JPS644070A (en) * 1987-06-26 1989-01-09 Hitachi Ltd Thin film transistor and manufacture thereof
JPH03237790A (ja) * 1990-02-15 1991-10-23 Shibaura Eng Works Co Ltd 電子回路部品の実装方法
JPH0637317A (ja) * 1990-04-11 1994-02-10 General Motors Corp <Gm> 薄膜トランジスタおよびその製造方法
JPH07118527B2 (ja) * 1990-10-18 1995-12-18 富士ゼロックス株式会社 イメージセンサの製造方法
US8344378B2 (en) * 2009-06-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567480A (en) * 1979-06-29 1981-01-26 Mitsubishi Electric Corp Film transistor
JPS56111258A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device
JPS577972A (en) * 1980-06-19 1982-01-16 Nec Corp Insulated gate type thin film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086805A (ja) * 2001-09-07 2003-03-20 Ricoh Co Ltd 薄膜トランジスタ、電気絶縁膜及びそれらの製造方法

Also Published As

Publication number Publication date
JPS58147070A (ja) 1983-09-01

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